High-Power and Repetion Rate Nanosecond Pulse Generation in "Diode Laser-Thyristor" Stacks
The "laser diode mini-bar (LDMB) - multi-element thyristor array (META)" vertical stack design is developed and its optoelectronic characteristics are studied. It is shown that adding a highly-doped layer to a low-voltage thyristor p-base leads to an increase in the repetition rate up to 1...
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| Veröffentlicht in: | IEEE photonics technology letters 2021-01, Vol.33 (1), p.11-14 |
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| creator | Slipchenko, Sergey O. Podoskin, Aleksandr A. Golovin, Vyacheslav S. Rastegaeva, Marina G. Voronkova, Natalia V. Pikhtin, Nikita A. Bagaev, Timur A. Ladugin, Maxim A. Marmalyuk, Aleksandr A. Simakov, Vladimir A. |
| description | The "laser diode mini-bar (LDMB) - multi-element thyristor array (META)" vertical stack design is developed and its optoelectronic characteristics are studied. It is shown that adding a highly-doped layer to a low-voltage thyristor p-base leads to an increase in the repetition rate up to 1 MHz at nanosecond laser and current pulses. Laser pulses with 11.5 W peak power and 2.4 ns pulse width at 1 MHz repetition rate are demonstrated using the META chip, comprised of 4 elements, as a high-current switch. It is shown that the difference between LDMB elements' turn-on delays does not exceed 400 ps. An increase in the pulse repetition rate from 10 kHz to 1 MHz at the operating voltage of 25 V is accompanied by insignificant LDMB heating (up to 3 °C) and a slight decrease in the laser pulse peak power (from 11.5 W to 11.1 W). |
| doi_str_mv | 10.1109/LPT.2020.3040026 |
| format | Article |
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It is shown that adding a highly-doped layer to a low-voltage thyristor p-base leads to an increase in the repetition rate up to 1 MHz at nanosecond laser and current pulses. Laser pulses with 11.5 W peak power and 2.4 ns pulse width at 1 MHz repetition rate are demonstrated using the META chip, comprised of 4 elements, as a high-current switch. It is shown that the difference between LDMB elements' turn-on delays does not exceed 400 ps. An increase in the pulse repetition rate from 10 kHz to 1 MHz at the operating voltage of 25 V is accompanied by insignificant LDMB heating (up to 3 °C) and a slight decrease in the laser pulse peak power (from 11.5 W to 11.1 W).</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2020.3040026</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitors ; Current pulses ; Electric potential ; Laser beam heating ; Lasers ; Measurement by laser beam ; Nanosecond pulses ; optical pulses ; Optical switches ; Optoelectronics ; Power lasers ; Pulse duration ; pulse generation ; Pulse repetition rate ; Semiconductor laser arrays ; Semiconductor lasers ; Thyristors ; Voltage ; Voltage control</subject><ispartof>IEEE photonics technology letters, 2021-01, Vol.33 (1), p.11-14</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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It is shown that adding a highly-doped layer to a low-voltage thyristor p-base leads to an increase in the repetition rate up to 1 MHz at nanosecond laser and current pulses. Laser pulses with 11.5 W peak power and 2.4 ns pulse width at 1 MHz repetition rate are demonstrated using the META chip, comprised of 4 elements, as a high-current switch. It is shown that the difference between LDMB elements' turn-on delays does not exceed 400 ps. An increase in the pulse repetition rate from 10 kHz to 1 MHz at the operating voltage of 25 V is accompanied by insignificant LDMB heating (up to 3 °C) and a slight decrease in the laser pulse peak power (from 11.5 W to 11.1 W).</description><subject>Capacitors</subject><subject>Current pulses</subject><subject>Electric potential</subject><subject>Laser beam heating</subject><subject>Lasers</subject><subject>Measurement by laser beam</subject><subject>Nanosecond pulses</subject><subject>optical pulses</subject><subject>Optical switches</subject><subject>Optoelectronics</subject><subject>Power lasers</subject><subject>Pulse duration</subject><subject>pulse generation</subject><subject>Pulse repetition rate</subject><subject>Semiconductor laser arrays</subject><subject>Semiconductor lasers</subject><subject>Thyristors</subject><subject>Voltage</subject><subject>Voltage control</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpdQz6mzX_k4StVWKFpqvXhZJsnEpmq27qZI_71bWzzNDPM-M_AwdslhyDnkN9PZYihAwFCCAhDJEevxXPEYeKqOQw-h51zqU3bm_QqAKy1Vj71NmvdlPLM_5CJsq2hOa-oa20Zz7Ch6wtZ6Km1YzDafnqIxteTwL9C00eCusRVFU_Tk4sVy6xrfWTeIXjosP_w5O6kxQBeH2mevD_eL0SSePo8fR7fTuBQ57-Jaosa01ooU5jVVkEmeyYKqVJRa1cglFsgTHqZMVRWirKEIaAIahC6k7LPr_d21s98b8p1Z2Y1rw0sjVJKrNNUiDynYp0pnvXdUm7VrvtBtDQezM2iCQbMzaA4GA3K1Rxoi-o_nIsmUTuUvUUZr4A</recordid><startdate>20210101</startdate><enddate>20210101</enddate><creator>Slipchenko, Sergey O.</creator><creator>Podoskin, Aleksandr A.</creator><creator>Golovin, Vyacheslav S.</creator><creator>Rastegaeva, Marina G.</creator><creator>Voronkova, Natalia V.</creator><creator>Pikhtin, Nikita A.</creator><creator>Bagaev, Timur A.</creator><creator>Ladugin, Maxim A.</creator><creator>Marmalyuk, Aleksandr A.</creator><creator>Simakov, Vladimir A.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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It is shown that adding a highly-doped layer to a low-voltage thyristor p-base leads to an increase in the repetition rate up to 1 MHz at nanosecond laser and current pulses. Laser pulses with 11.5 W peak power and 2.4 ns pulse width at 1 MHz repetition rate are demonstrated using the META chip, comprised of 4 elements, as a high-current switch. It is shown that the difference between LDMB elements' turn-on delays does not exceed 400 ps. An increase in the pulse repetition rate from 10 kHz to 1 MHz at the operating voltage of 25 V is accompanied by insignificant LDMB heating (up to 3 °C) and a slight decrease in the laser pulse peak power (from 11.5 W to 11.1 W).</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2020.3040026</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-4851-3641</orcidid><orcidid>https://orcid.org/0000-0001-5914-5050</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Capacitors Current pulses Electric potential Laser beam heating Lasers Measurement by laser beam Nanosecond pulses optical pulses Optical switches Optoelectronics Power lasers Pulse duration pulse generation Pulse repetition rate Semiconductor laser arrays Semiconductor lasers Thyristors Voltage Voltage control |
| title | High-Power and Repetion Rate Nanosecond Pulse Generation in "Diode Laser-Thyristor" Stacks |
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