Parasitic bipolar transistor model using generated-hole-dependent base resistance

An accurate parasitic bipolar transistor model is indispensable for the evaluation of ESD immunity. Injected electrons are well known to modulate base resistance, but we found that it is not true during snapback because the electric field associated with injected electrons is compensated by the hole...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Suzuki, K., Anzai, F., Nomura, T., Satoh, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bipolar transistors Charge carrier processes Circuit simulation Electric resistance Electrostatic discharge Equivalent circuits Immune system MOSFET circuits Protection Robustness
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!