Is product screen enough to guarantee low failure rate for the customer?

This paper shows the importance in advanced submicron CMOS technologies of an in-line product monitoring process optimized to screen defects and discover wearout mechanisms. Standby current failures from DRAM modules during accelerated product stresses caused by PMOSFET off conducting hot carrier damage is an observed device wearout mechanism which is not detected by commonly used product defect screens. A product screening strategy that takes into account the technology limitations and product stress results is required.