A Combined Broadband Model for GaN HEMTs in Admittance Domain Based on Canonical Piecewise Linear Functions

In this article, a new large-signal transistor model is proposed. The model combines the advantage of both compact modeling and behavioral modeling techniques, resulting in a new modeling methodology. The intrinsic part of the model is based on the black-box poly-harmonic distortion (PHD) framework,...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2020-12, Vol.68 (12), p.5042-5054
Hauptverfasser:	Cai, Jialin, King, Justin B., Yu, Chao, Chen, Shichang, Xie, Qiangqiang, Sun, Lingling
Format:	Artikel
Sprache:	eng
Schlagworte:	Admittance Admittance domain Broadband canonical piecewise-linear function Electrical impedance Frequencies Frequency-domain analysis Harmonic distortion High electron mobility transistors Integrated circuit modeling Interpolation Linear functions Load modeling Mathematical model Modelling poly-harmonic distortion (PHD) model RF power transistor Semiconductor devices Smith chart Transistors Waveforms
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