Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications
In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel...
Gespeichert in:
| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2020, Vol.8, p.1236-1241 |
|---|---|
| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1241 |
|---|---|
| container_issue | |
| container_start_page | 1236 |
| container_title | IEEE journal of the Electron Devices Society |
| container_volume | 8 |
| creator | Wang, Kai Qi, Yihong Hu, Yunfeng Xu, Yangbing Xu, Yitong Liu, Jinming Zhou, Xianda |
| description | In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor and consequently, reduces the SNR. This work proposes and summarizes our recent efforts taken to achieve high gain optical sensors through subthreshold operation of photodiode-gated transistors. |
| doi_str_mv | 10.1109/JEDS.2020.3022711 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_9187938</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9187938</ieee_id><doaj_id>oai_doaj_org_article_e73681aabc5548718e06fc95adb109f6</doaj_id><sourcerecordid>2457973640</sourcerecordid><originalsourceid>FETCH-LOGICAL-c402t-800569bccebdf46c849b376b8e1865c2ce3381e2e5162d9961c26d3a09de209d3</originalsourceid><addsrcrecordid>eNpNUUtLxDAQLqLgovsDxEvBc9c82jQ5LrrqiqCw6zmkybTNUpuadA_-e1MrYg7JMN9jhnxJcoXRCmMkbp8397sVQQStKCKkxPgkWRDMeMZKmp_-q8-TZQgHFA_HTDC2SPzuWI2th9C6zqSvA3g1Wtenrk7fWjc6Y52B7FGNYNK9V32wYXQ-pJteVZ3tm_TJNm3EbR_Fo9WqS3cQWRFRvUm3H6qZ6vUwdBGcrMNlclarLsDy971I3h82-7un7OX1cXu3fsl0jsiYcYQKJiqtoTJ1zjTPRUVLVnHAnBWaaKCUYyBQYEaMEAxrwgxVSBgg8aIXyXb2NU4d5ODth_Jf0ikrfxrON1L5uHIHEkrKOFaq0kWR8xJzQKzWolCmiv9bs-h1M3sN3n0eIYzy4I6-j-tLkheliPocRRaeWdq7EDzUf1MxklNSckpKTknJ36Si5nrWWAD44wvMS0E5_Qa0fo9F</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2457973640</pqid></control><display><type>article</type><title>Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications</title><source>IEEE Open Access Journals</source><source>DOAJ Directory of Open Access Journals</source><source>EZB-FREE-00999 freely available EZB journals</source><creator>Wang, Kai ; Qi, Yihong ; Hu, Yunfeng ; Xu, Yangbing ; Xu, Yitong ; Liu, Jinming ; Zhou, Xianda</creator><creatorcontrib>Wang, Kai ; Qi, Yihong ; Hu, Yunfeng ; Xu, Yangbing ; Xu, Yitong ; Liu, Jinming ; Zhou, Xianda</creatorcontrib><description>In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor and consequently, reduces the SNR. This work proposes and summarizes our recent efforts taken to achieve high gain optical sensors through subthreshold operation of photodiode-gated transistors.</description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2020.3022711</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>active pixel sensor ; Active pixel sensors ; Avalanche diodes ; Circuits ; Electric fields ; High gain ; Logic gates ; MOSFET ; Optical measuring instruments ; Optical sensors ; Photoconductivity ; photodiode-gated transistors ; Photodiodes ; Pixels ; Semiconductor devices ; Sensors ; Shot noise ; Signal to noise ratio ; subthreshold operation ; Thin film transistors ; Threshold voltage ; Transistors</subject><ispartof>IEEE journal of the Electron Devices Society, 2020, Vol.8, p.1236-1241</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-800569bccebdf46c849b376b8e1865c2ce3381e2e5162d9961c26d3a09de209d3</citedby><cites>FETCH-LOGICAL-c402t-800569bccebdf46c849b376b8e1865c2ce3381e2e5162d9961c26d3a09de209d3</cites><orcidid>0000-0001-9702-6642 ; 0000-0003-2006-5760</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9187938$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,864,2102,4024,27633,27923,27924,27925,54933</link.rule.ids></links><search><creatorcontrib>Wang, Kai</creatorcontrib><creatorcontrib>Qi, Yihong</creatorcontrib><creatorcontrib>Hu, Yunfeng</creatorcontrib><creatorcontrib>Xu, Yangbing</creatorcontrib><creatorcontrib>Xu, Yitong</creatorcontrib><creatorcontrib>Liu, Jinming</creatorcontrib><creatorcontrib>Zhou, Xianda</creatorcontrib><title>Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description>In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor and consequently, reduces the SNR. This work proposes and summarizes our recent efforts taken to achieve high gain optical sensors through subthreshold operation of photodiode-gated transistors.</description><subject>active pixel sensor</subject><subject>Active pixel sensors</subject><subject>Avalanche diodes</subject><subject>Circuits</subject><subject>Electric fields</subject><subject>High gain</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>Optical measuring instruments</subject><subject>Optical sensors</subject><subject>Photoconductivity</subject><subject>photodiode-gated transistors</subject><subject>Photodiodes</subject><subject>Pixels</subject><subject>Semiconductor devices</subject><subject>Sensors</subject><subject>Shot noise</subject><subject>Signal to noise ratio</subject><subject>subthreshold operation</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>Transistors</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNUUtLxDAQLqLgovsDxEvBc9c82jQ5LrrqiqCw6zmkybTNUpuadA_-e1MrYg7JMN9jhnxJcoXRCmMkbp8397sVQQStKCKkxPgkWRDMeMZKmp_-q8-TZQgHFA_HTDC2SPzuWI2th9C6zqSvA3g1Wtenrk7fWjc6Y52B7FGNYNK9V32wYXQ-pJteVZ3tm_TJNm3EbR_Fo9WqS3cQWRFRvUm3H6qZ6vUwdBGcrMNlclarLsDy971I3h82-7un7OX1cXu3fsl0jsiYcYQKJiqtoTJ1zjTPRUVLVnHAnBWaaKCUYyBQYEaMEAxrwgxVSBgg8aIXyXb2NU4d5ODth_Jf0ikrfxrON1L5uHIHEkrKOFaq0kWR8xJzQKzWolCmiv9bs-h1M3sN3n0eIYzy4I6-j-tLkheliPocRRaeWdq7EDzUf1MxklNSckpKTknJ36Si5nrWWAD44wvMS0E5_Qa0fo9F</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Wang, Kai</creator><creator>Qi, Yihong</creator><creator>Hu, Yunfeng</creator><creator>Xu, Yangbing</creator><creator>Xu, Yitong</creator><creator>Liu, Jinming</creator><creator>Zhou, Xianda</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0001-9702-6642</orcidid><orcidid>https://orcid.org/0000-0003-2006-5760</orcidid></search><sort><creationdate>2020</creationdate><title>Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications</title><author>Wang, Kai ; Qi, Yihong ; Hu, Yunfeng ; Xu, Yangbing ; Xu, Yitong ; Liu, Jinming ; Zhou, Xianda</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c402t-800569bccebdf46c849b376b8e1865c2ce3381e2e5162d9961c26d3a09de209d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>active pixel sensor</topic><topic>Active pixel sensors</topic><topic>Avalanche diodes</topic><topic>Circuits</topic><topic>Electric fields</topic><topic>High gain</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>Optical measuring instruments</topic><topic>Optical sensors</topic><topic>Photoconductivity</topic><topic>photodiode-gated transistors</topic><topic>Photodiodes</topic><topic>Pixels</topic><topic>Semiconductor devices</topic><topic>Sensors</topic><topic>Shot noise</topic><topic>Signal to noise ratio</topic><topic>subthreshold operation</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Kai</creatorcontrib><creatorcontrib>Qi, Yihong</creatorcontrib><creatorcontrib>Hu, Yunfeng</creatorcontrib><creatorcontrib>Xu, Yangbing</creatorcontrib><creatorcontrib>Xu, Yitong</creatorcontrib><creatorcontrib>Liu, Jinming</creatorcontrib><creatorcontrib>Zhou, Xianda</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE journal of the Electron Devices Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Kai</au><au>Qi, Yihong</au><au>Hu, Yunfeng</au><au>Xu, Yangbing</au><au>Xu, Yitong</au><au>Liu, Jinming</au><au>Zhou, Xianda</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications</atitle><jtitle>IEEE journal of the Electron Devices Society</jtitle><stitle>JEDS</stitle><date>2020</date><risdate>2020</risdate><volume>8</volume><spage>1236</spage><epage>1241</epage><pages>1236-1241</pages><issn>2168-6734</issn><eissn>2168-6734</eissn><coden>IJEDAC</coden><abstract>In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor and consequently, reduces the SNR. This work proposes and summarizes our recent efforts taken to achieve high gain optical sensors through subthreshold operation of photodiode-gated transistors.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JEDS.2020.3022711</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-9702-6642</orcidid><orcidid>https://orcid.org/0000-0003-2006-5760</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2168-6734 |
| ispartof | IEEE journal of the Electron Devices Society, 2020, Vol.8, p.1236-1241 |
| issn | 2168-6734 2168-6734 |
| language | eng |
| recordid | cdi_ieee_primary_9187938 |
| source | IEEE Open Access Journals; DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals |
| subjects | active pixel sensor Active pixel sensors Avalanche diodes Circuits Electric fields High gain Logic gates MOSFET Optical measuring instruments Optical sensors Photoconductivity photodiode-gated transistors Photodiodes Pixels Semiconductor devices Sensors Shot noise Signal to noise ratio subthreshold operation Thin film transistors Threshold voltage Transistors |
| title | Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T18%3A07%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Subthreshold%20Operation%20of%20Photodiode-Gated%20Transistors%20Enabling%20High-Gain%20Optical%20Sensing%20and%20Imaging%20Applications&rft.jtitle=IEEE%20journal%20of%20the%20Electron%20Devices%20Society&rft.au=Wang,%20Kai&rft.date=2020&rft.volume=8&rft.spage=1236&rft.epage=1241&rft.pages=1236-1241&rft.issn=2168-6734&rft.eissn=2168-6734&rft.coden=IJEDAC&rft_id=info:doi/10.1109/JEDS.2020.3022711&rft_dat=%3Cproquest_ieee_%3E2457973640%3C/proquest_ieee_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2457973640&rft_id=info:pmid/&rft_ieee_id=9187938&rft_doaj_id=oai_doaj_org_article_e73681aabc5548718e06fc95adb109f6&rfr_iscdi=true |