Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel...

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Veröffentlicht in:IEEE journal of the Electron Devices Society 2020, Vol.8, p.1236-1241
Hauptverfasser: Wang, Kai, Qi, Yihong, Hu, Yunfeng, Xu, Yangbing, Xu, Yitong, Liu, Jinming, Zhou, Xianda
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Sprache:eng
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Zusammenfassung:In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor and consequently, reduces the SNR. This work proposes and summarizes our recent efforts taken to achieve high gain optical sensors through subthreshold operation of photodiode-gated transistors.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2020.3022711