Ferroelectric HfZrO2 With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

Atomic layer deposition (ALD)-based TiN electrode on ferroelectric HfZrO 2 metal/ferroelectric/metal (MFM) capacitor and ferroelectric field-effect transistor (FeFET) is demonstrated experimentally with weight transfer, that is, \Delta {P} , per pulse analysis through consecutive alternating potent...

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Veröffentlicht in:	IEEE transactions on electron devices 2020-10, Vol.67 (10), p.4201-4207
Hauptverfasser:	Hsiang, K.-Y., Liao, C.-Y., Chen, K.-T., Lin, Y.-Y., Chueh, C.-Y., Chang, C., Tseng, Y.-J., Yang, Y.-J., Chang, S. T., Liao, M.-H., Hou, T.-H., Wu, C.-H., Ho, C.-C., Chiu, J.-P., Chang, C.-S., Lee, M. H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Artificial neural networks Asymmetry Atomic layer epitaxy Atomic properties Capacitors Electrode polarization Electrodes Ferroelectric materials Ferroelectric memories Ferroelectricity Field effect transistors hafnium Modulation Neural networks Polarization modulation Semiconductor devices Synapses Tin Training Weight Weightlifting
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