Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates

GaN power ICs on engineered substrates of Qromis substrate technology (QST) are promising for future power applications, thanks to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, and high mechanical yield in combination with thick GaN buffer layers. In thi...

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Veröffentlicht in:	IEEE transactions on semiconductor manufacturing 2020-11, Vol.33 (4), p.534-538
Hauptverfasser:	Li, Xiangdong, Geens, Karen, Wellekens, Dirk, Zhao, Ming, Magnani, Alessandro, Amirifar, Nooshin, Bakeroot, Benoit, You, Shuzhen, Fahle, Dirk, Hahn, Herwig, Heuken, Michael, Odnoblyudov, Vlad, Aktas, Ozgur, Basceri, Cem, Marcon, Denis, Groeseneken, Guido, Decoutere, Stefaan
Format:	Artikel
Sprache:	eng
Schlagworte:	engineered substrates Epitaxial growth Gallium nitride Gallium nitrides GaN HEMTs High electron mobility transistors Integrated circuits Leakage power ICs Semiconductor devices Substrates Threshold voltage
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