Improved radiation hardness of silicon solar cells
SHARP and NASDA (National Space Development Agency of Japan) have been engaged in the development of silicon space solar cells since 1970s. We started the project to improve the radiation hardness of silicon solar cells in 1998. This project gave fruitful results in BJ (both-side junction) and AHES...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1117 |
|---|---|
| container_issue | |
| container_start_page | 1114 |
| container_title | |
| container_volume | |
| creator | Washio, H. Tonomura, Y. Kaneiwa, M. Saga, T. Anzawa, O. Matsuda, S. |
| description | SHARP and NASDA (National Space Development Agency of Japan) have been engaged in the development of silicon space solar cells since 1970s. We started the project to improve the radiation hardness of silicon solar cells in 1998. This project gave fruitful results in BJ (both-side junction) and AHES (advanced high efficiency silicon) structure. The design and manufacturing process for the BJ cells and the AHES-1 cells were finalized and their characteristics were qualified. The experimental results of these solar cells' performance are compared with conventional HES (high efficiency silicon) cells. The BJ, the AHES-1 and AHES-2 cells showed 13.5%, 13.1% and 13.4% efficiency, respectively, at AM0, 28/spl deg/C after the irradiation of 1 MeV electrons of 1/spl times/10/sup 15/ e/m/sup 2/. The EOL efficiency of 13.5% of BJ cell is the highest ever reported for space silicon solar cells. This paper presents the main features of the BJ, the AHES-1 and AHES-2 design and qualification status. |
| doi_str_mv | 10.1109/PVSC.2000.916082 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_916082</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>916082</ieee_id><sourcerecordid>916082</sourcerecordid><originalsourceid>FETCH-LOGICAL-i174t-c14eb9909c6ad2278510715e984dd391baf6c8c01239169a4d5a57b3bf95e293</originalsourceid><addsrcrecordid>eNotj0tLAzEURgMq2Fb34ip_YMZ7k8lrKYOPQkHB4rbcSTIYSTslKYL_3oG6Onxn8cFh7A6hRQT38P750bcCAFqHGqy4YEswFqQyRthLtoDZNlYavGbLWr8BBEiNCybW-2OZfmLghUKiU5oO_ItKOMRa-TTymnLys6tTpsJ9zLnesKuRco23_1yx7fPTtn9tNm8v6_5x0yQ03anx2MXBOXBeUxDCWIVgUEVnuxCkw4FG7a0HFPPQjrqgSJlBDqNTUTi5Yvfn2xRj3B1L2lP53Z3r5B_u00K0</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Improved radiation hardness of silicon solar cells</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Washio, H. ; Tonomura, Y. ; Kaneiwa, M. ; Saga, T. ; Anzawa, O. ; Matsuda, S.</creator><creatorcontrib>Washio, H. ; Tonomura, Y. ; Kaneiwa, M. ; Saga, T. ; Anzawa, O. ; Matsuda, S.</creatorcontrib><description>SHARP and NASDA (National Space Development Agency of Japan) have been engaged in the development of silicon space solar cells since 1970s. We started the project to improve the radiation hardness of silicon solar cells in 1998. This project gave fruitful results in BJ (both-side junction) and AHES (advanced high efficiency silicon) structure. The design and manufacturing process for the BJ cells and the AHES-1 cells were finalized and their characteristics were qualified. The experimental results of these solar cells' performance are compared with conventional HES (high efficiency silicon) cells. The BJ, the AHES-1 and AHES-2 cells showed 13.5%, 13.1% and 13.4% efficiency, respectively, at AM0, 28/spl deg/C after the irradiation of 1 MeV electrons of 1/spl times/10/sup 15/ e/m/sup 2/. The EOL efficiency of 13.5% of BJ cell is the highest ever reported for space silicon solar cells. This paper presents the main features of the BJ, the AHES-1 and AHES-2 design and qualification status.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 0780357728</identifier><identifier>ISBN: 9780780357723</identifier><identifier>DOI: 10.1109/PVSC.2000.916082</identifier><language>eng</language><publisher>IEEE</publisher><subject>Abstracts ; Contacts ; Electrons ; P-n junctions ; Photovoltaic cells ; Process design ; Qualifications ; Satellites ; Silicon ; Solar power generation</subject><ispartof>Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.1114-1117</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/916082$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,4035,4036,27904,54899</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/916082$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Washio, H.</creatorcontrib><creatorcontrib>Tonomura, Y.</creatorcontrib><creatorcontrib>Kaneiwa, M.</creatorcontrib><creatorcontrib>Saga, T.</creatorcontrib><creatorcontrib>Anzawa, O.</creatorcontrib><creatorcontrib>Matsuda, S.</creatorcontrib><title>Improved radiation hardness of silicon solar cells</title><title>Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)</title><addtitle>PVSC</addtitle><description>SHARP and NASDA (National Space Development Agency of Japan) have been engaged in the development of silicon space solar cells since 1970s. We started the project to improve the radiation hardness of silicon solar cells in 1998. This project gave fruitful results in BJ (both-side junction) and AHES (advanced high efficiency silicon) structure. The design and manufacturing process for the BJ cells and the AHES-1 cells were finalized and their characteristics were qualified. The experimental results of these solar cells' performance are compared with conventional HES (high efficiency silicon) cells. The BJ, the AHES-1 and AHES-2 cells showed 13.5%, 13.1% and 13.4% efficiency, respectively, at AM0, 28/spl deg/C after the irradiation of 1 MeV electrons of 1/spl times/10/sup 15/ e/m/sup 2/. The EOL efficiency of 13.5% of BJ cell is the highest ever reported for space silicon solar cells. This paper presents the main features of the BJ, the AHES-1 and AHES-2 design and qualification status.</description><subject>Abstracts</subject><subject>Contacts</subject><subject>Electrons</subject><subject>P-n junctions</subject><subject>Photovoltaic cells</subject><subject>Process design</subject><subject>Qualifications</subject><subject>Satellites</subject><subject>Silicon</subject><subject>Solar power generation</subject><issn>0160-8371</issn><isbn>0780357728</isbn><isbn>9780780357723</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj0tLAzEURgMq2Fb34ip_YMZ7k8lrKYOPQkHB4rbcSTIYSTslKYL_3oG6Onxn8cFh7A6hRQT38P750bcCAFqHGqy4YEswFqQyRthLtoDZNlYavGbLWr8BBEiNCybW-2OZfmLghUKiU5oO_ItKOMRa-TTymnLys6tTpsJ9zLnesKuRco23_1yx7fPTtn9tNm8v6_5x0yQ03anx2MXBOXBeUxDCWIVgUEVnuxCkw4FG7a0HFPPQjrqgSJlBDqNTUTi5Yvfn2xRj3B1L2lP53Z3r5B_u00K0</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Washio, H.</creator><creator>Tonomura, Y.</creator><creator>Kaneiwa, M.</creator><creator>Saga, T.</creator><creator>Anzawa, O.</creator><creator>Matsuda, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>Improved radiation hardness of silicon solar cells</title><author>Washio, H. ; Tonomura, Y. ; Kaneiwa, M. ; Saga, T. ; Anzawa, O. ; Matsuda, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-c14eb9909c6ad2278510715e984dd391baf6c8c01239169a4d5a57b3bf95e293</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Abstracts</topic><topic>Contacts</topic><topic>Electrons</topic><topic>P-n junctions</topic><topic>Photovoltaic cells</topic><topic>Process design</topic><topic>Qualifications</topic><topic>Satellites</topic><topic>Silicon</topic><topic>Solar power generation</topic><toplevel>online_resources</toplevel><creatorcontrib>Washio, H.</creatorcontrib><creatorcontrib>Tonomura, Y.</creatorcontrib><creatorcontrib>Kaneiwa, M.</creatorcontrib><creatorcontrib>Saga, T.</creatorcontrib><creatorcontrib>Anzawa, O.</creatorcontrib><creatorcontrib>Matsuda, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Washio, H.</au><au>Tonomura, Y.</au><au>Kaneiwa, M.</au><au>Saga, T.</au><au>Anzawa, O.</au><au>Matsuda, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Improved radiation hardness of silicon solar cells</atitle><btitle>Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)</btitle><stitle>PVSC</stitle><date>2000</date><risdate>2000</risdate><spage>1114</spage><epage>1117</epage><pages>1114-1117</pages><issn>0160-8371</issn><isbn>0780357728</isbn><isbn>9780780357723</isbn><abstract>SHARP and NASDA (National Space Development Agency of Japan) have been engaged in the development of silicon space solar cells since 1970s. We started the project to improve the radiation hardness of silicon solar cells in 1998. This project gave fruitful results in BJ (both-side junction) and AHES (advanced high efficiency silicon) structure. The design and manufacturing process for the BJ cells and the AHES-1 cells were finalized and their characteristics were qualified. The experimental results of these solar cells' performance are compared with conventional HES (high efficiency silicon) cells. The BJ, the AHES-1 and AHES-2 cells showed 13.5%, 13.1% and 13.4% efficiency, respectively, at AM0, 28/spl deg/C after the irradiation of 1 MeV electrons of 1/spl times/10/sup 15/ e/m/sup 2/. The EOL efficiency of 13.5% of BJ cell is the highest ever reported for space silicon solar cells. This paper presents the main features of the BJ, the AHES-1 and AHES-2 design and qualification status.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2000.916082</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0160-8371 |
| ispartof | Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.1114-1117 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_916082 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Abstracts Contacts Electrons P-n junctions Photovoltaic cells Process design Qualifications Satellites Silicon Solar power generation |
| title | Improved radiation hardness of silicon solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T17%3A26%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Improved%20radiation%20hardness%20of%20silicon%20solar%20cells&rft.btitle=Conference%20Record%20of%20the%20Twenty-Eighth%20IEEE%20Photovoltaic%20Specialists%20Conference%20-%202000%20(Cat.%20No.00CH37036)&rft.au=Washio,%20H.&rft.date=2000&rft.spage=1114&rft.epage=1117&rft.pages=1114-1117&rft.issn=0160-8371&rft.isbn=0780357728&rft.isbn_list=9780780357723&rft_id=info:doi/10.1109/PVSC.2000.916082&rft_dat=%3Cieee_6IE%3E916082%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=916082&rfr_iscdi=true |