Defect monitoring using scanning photoluminescence spectroscopy in multicrystalline silicon solar cell
Room-temperature scanning photoluminescence (PL) was applied to full-size as-grown and processed EFG wafers to investigate the evolution of low lifetime areas after different solar cell processing steps. PL mapping of the band-to-band PL intensity provides a means to identify low lifetime areas. In...
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| creator | Tarasov, I. Ostapenko, S. Kalejs, J.P. |
| description | Room-temperature scanning photoluminescence (PL) was applied to full-size as-grown and processed EFG wafers to investigate the evolution of low lifetime areas after different solar cell processing steps. PL mapping of the band-to-band PL intensity provides a means to identify low lifetime areas. In these areas we consistently observe an additional "defect" PL band with the maximum at about 0.8 eV attributed to dislocation networks. A simple approach of selectively monitoring the concentration of the defect centers is introduced. Consecutive solar cell processing steps gradually increase band-to-band and defect PL intensities due to lifetime upgrading. Concurrently, the rate of reduction of the defect concentration is much lower. We demonstrate here that PL approach offers a monitoring method for dislocations to characterize as-grown and processed multicrystalline Si. |
| doi_str_mv | 10.1109/PVSC.2000.915767 |
| format | Conference Proceeding |
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PL mapping of the band-to-band PL intensity provides a means to identify low lifetime areas. In these areas we consistently observe an additional "defect" PL band with the maximum at about 0.8 eV attributed to dislocation networks. A simple approach of selectively monitoring the concentration of the defect centers is introduced. Consecutive solar cell processing steps gradually increase band-to-band and defect PL intensities due to lifetime upgrading. Concurrently, the rate of reduction of the defect concentration is much lower. We demonstrate here that PL approach offers a monitoring method for dislocations to characterize as-grown and processed multicrystalline Si.</description><identifier>ISSN: 0160-8371</identifier><identifier>ISBN: 9780780357723</identifier><identifier>ISBN: 0780357728</identifier><identifier>DOI: 10.1109/PVSC.2000.915767</identifier><language>eng</language><publisher>IEEE</publisher><subject>Luminescence ; Microelectronics ; Monitoring ; Optical sensors ; Photoluminescence ; Photovoltaic cells ; Production ; Silicon ; Spatial resolution ; Spectroscopy</subject><ispartof>Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. 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We demonstrate here that PL approach offers a monitoring method for dislocations to characterize as-grown and processed multicrystalline Si.</description><subject>Luminescence</subject><subject>Microelectronics</subject><subject>Monitoring</subject><subject>Optical sensors</subject><subject>Photoluminescence</subject><subject>Photovoltaic cells</subject><subject>Production</subject><subject>Silicon</subject><subject>Spatial resolution</subject><subject>Spectroscopy</subject><issn>0160-8371</issn><isbn>9780780357723</isbn><isbn>0780357728</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9TsFqwzAUM3SFdmvvZSf_QLPnmMbNudvYcdCxazHmZXvlxQ5-ziF_v5TtPBCSQBJIqZ2Byhhon94_z6eqBoCqNQfXuIXatu4IM-zBudreqTWYBvZH68xK3YtcAWqwjVmr7hk7DEX3KVJJmeKXHuXGEnyMNzN8p5J47CmiBIwBtQzzIicJaZg0Rd2PXCjkSYpnnmtaiCmkqCWxzzog80YtO8-C2z99UI-vLx-ntz0h4mXI1Ps8XX7f23_DH1VCSkw</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Tarasov, I.</creator><creator>Ostapenko, S.</creator><creator>Kalejs, J.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>Defect monitoring using scanning photoluminescence spectroscopy in multicrystalline silicon solar cell</title><author>Tarasov, I. ; Ostapenko, S. ; Kalejs, J.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_9157673</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Luminescence</topic><topic>Microelectronics</topic><topic>Monitoring</topic><topic>Optical sensors</topic><topic>Photoluminescence</topic><topic>Photovoltaic cells</topic><topic>Production</topic><topic>Silicon</topic><topic>Spatial resolution</topic><topic>Spectroscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Tarasov, I.</creatorcontrib><creatorcontrib>Ostapenko, S.</creatorcontrib><creatorcontrib>Kalejs, J.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tarasov, I.</au><au>Ostapenko, S.</au><au>Kalejs, J.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Defect monitoring using scanning photoluminescence spectroscopy in multicrystalline silicon solar cell</atitle><btitle>Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)</btitle><stitle>PVSC</stitle><date>2000</date><risdate>2000</risdate><spage>112</spage><epage>115</epage><pages>112-115</pages><issn>0160-8371</issn><isbn>9780780357723</isbn><isbn>0780357728</isbn><abstract>Room-temperature scanning photoluminescence (PL) was applied to full-size as-grown and processed EFG wafers to investigate the evolution of low lifetime areas after different solar cell processing steps. PL mapping of the band-to-band PL intensity provides a means to identify low lifetime areas. In these areas we consistently observe an additional "defect" PL band with the maximum at about 0.8 eV attributed to dislocation networks. A simple approach of selectively monitoring the concentration of the defect centers is introduced. Consecutive solar cell processing steps gradually increase band-to-band and defect PL intensities due to lifetime upgrading. Concurrently, the rate of reduction of the defect concentration is much lower. We demonstrate here that PL approach offers a monitoring method for dislocations to characterize as-grown and processed multicrystalline Si.</abstract><pub>IEEE</pub><doi>10.1109/PVSC.2000.915767</doi></addata></record> |
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| ispartof | Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.112-115 |
| issn | 0160-8371 |
| language | eng |
| recordid | cdi_ieee_primary_915767 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Luminescence Microelectronics Monitoring Optical sensors Photoluminescence Photovoltaic cells Production Silicon Spatial resolution Spectroscopy |
| title | Defect monitoring using scanning photoluminescence spectroscopy in multicrystalline silicon solar cell |
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