Temperature tweaking of the output photovoltaic parameters of laser power converters
An option for the structural design of the metamorphic InGaAs photovoltaic converter is presented. The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C temperatures. The temperature dependencies of the o...
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| Veröffentlicht in: | IEEE electron device letters 2020-09, Vol.41 (9), p.1-1 |
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| container_title | IEEE electron device letters |
| container_volume | 41 |
| creator | Shvarts, M Z Emelyanov, V M Malevskiy, D A Mintairov, M A Mintairov, S A Nakhimovich, M V Pokrovskiy, P V Salii, R A Kalyuzhnyy, N A |
| description | An option for the structural design of the metamorphic InGaAs photovoltaic converter is presented. The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C temperatures. The temperature dependencies of the output photovoltaic parameters for two types of InxGa1-xAs laser-power converters are presented in regard to In content: with x = 0.23 and x = 0.18 and with an efficiency of ∼50% and ∼40% (25 °C), respectively. For In0.18Ga0.82As device, an increase in efficiency of up to 50% is recorded upon transition to a temperature range of 50÷60 °C with maintaining efficiency at a level of more than 45% at elevated to 100 °C operating temperatures. In comparison, the "standard" In0.23Ga0.77As device performs a negative efficiency trend within a whole temperature range with absolute values below 45% in practically important operating modes of +75÷100 °C. |
| doi_str_mv | 10.1109/LED.2020.3012023 |
| format | Article |
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The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C temperatures. The temperature dependencies of the output photovoltaic parameters for two types of InxGa1-xAs laser-power converters are presented in regard to In content: with x = 0.23 and x = 0.18 and with an efficiency of ∼50% and ∼40% (25 °C), respectively. For In0.18Ga0.82As device, an increase in efficiency of up to 50% is recorded upon transition to a temperature range of 50÷60 °C with maintaining efficiency at a level of more than 45% at elevated to 100 °C operating temperatures. 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The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C temperatures. The temperature dependencies of the output photovoltaic parameters for two types of InxGa1-xAs laser-power converters are presented in regard to In content: with x = 0.23 and x = 0.18 and with an efficiency of ∼50% and ∼40% (25 °C), respectively. For In0.18Ga0.82As device, an increase in efficiency of up to 50% is recorded upon transition to a temperature range of 50÷60 °C with maintaining efficiency at a level of more than 45% at elevated to 100 °C operating temperatures. In comparison, the "standard" In0.23Ga0.77As device performs a negative efficiency trend within a whole temperature range with absolute values below 45% in practically important operating modes of +75÷100 °C.</description><subject>conversion efficiency</subject><subject>Efficiency</subject><subject>Heating systems</subject><subject>laser power converter</subject><subject>Lasers</subject><subject>Operating temperature</subject><subject>Parameters</subject><subject>Photonic band gap</subject><subject>Photovoltaic systems</subject><subject>photovoltaics</subject><subject>Power converters</subject><subject>Power lasers</subject><subject>Semiconductor lasers</subject><subject>spectral response</subject><subject>Structural design</subject><subject>Temperature</subject><subject>Temperature distribution</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpeA59SZ3WSTPUr9hIKXel4m6cS2tt24u2nx35vQ4mXegXlmBh4hbhEmiGAeZs9PEwkSJgqwT3UmRpjnZQq5VudiBEWGqULQl-IqhDUAZlmRjcR8ztuWPcXOcxIPTN-r3VfimiQuOXFdbLuYtEsX3d5tIq3qpCVPW47sw0BtKLBPWnfoa-12e_bD5FpcNLQJfHPKsfh8eZ5P39LZx-v79HGW1tJgTAm1QalzzBoCoqrMDeuiXJSLBtFUUpUVERYNNX3bVEriAhVIiYAGiHM1FvfHu613Px2HaNeu87v-pZWZKrWRGouegiNVexeC58a2frUl_2sR7ODO9u7s4M6e3PUrd8eVFTP_4wYzo6VRfwySatQ</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Shvarts, M Z</creator><creator>Emelyanov, V M</creator><creator>Malevskiy, D A</creator><creator>Mintairov, M A</creator><creator>Mintairov, S A</creator><creator>Nakhimovich, M V</creator><creator>Pokrovskiy, P V</creator><creator>Salii, R A</creator><creator>Kalyuzhnyy, N A</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The peculiarity of the proposed device is the ability to operate efficiently with the high-power 1064 nm laser radiation at the elevated up to +125°C temperatures. The temperature dependencies of the output photovoltaic parameters for two types of InxGa1-xAs laser-power converters are presented in regard to In content: with x = 0.23 and x = 0.18 and with an efficiency of ∼50% and ∼40% (25 °C), respectively. For In0.18Ga0.82As device, an increase in efficiency of up to 50% is recorded upon transition to a temperature range of 50÷60 °C with maintaining efficiency at a level of more than 45% at elevated to 100 °C operating temperatures. In comparison, the "standard" In0.23Ga0.77As device performs a negative efficiency trend within a whole temperature range with absolute values below 45% in practically important operating modes of +75÷100 °C.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2020.3012023</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-2230-7770</orcidid><orcidid>https://orcid.org/0000-0002-6176-6291</orcidid></addata></record> |
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| subjects | conversion efficiency Efficiency Heating systems laser power converter Lasers Operating temperature Parameters Photonic band gap Photovoltaic systems photovoltaics Power converters Power lasers Semiconductor lasers spectral response Structural design Temperature Temperature distribution |
| title | Temperature tweaking of the output photovoltaic parameters of laser power converters |
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