High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET

A reverse-channel 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor (UMOSFET) (RC-MOS) is proposed in this article. The RC-MOS is demonstrated to have low specific ON-resistance ( R_{\mathrm{ON,sp}} ) by numerical simulation. The trench oxide in the RC-MOS is fully protected by th...

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Veröffentlicht in:	IEEE transactions on electron devices 2020-10, Vol.67 (10), p.4046-4053
Hauptverfasser:	Shen, Zhanwei, Zhang, Feng, Yan, Guoguo, Wen, Zhengxin, Zhao, Wanshun, Wang, Lei, Liu, Xingfang, Sun, Guosheng, Zeng, Yiping
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffer layers Capacitance Computer simulation Doping electric field Electric fields Electrodes Energy dissipation Field effect transistors gate charge JFETs Logic gates MOSFET MOSFETs reverse-channel Semiconductor devices Silicon carbide Switches Switching trench gate metal-oxide-semiconductor field-effect transistor (UMOSFET)
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