Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers

Charge-trapping phenomena in radio-frequency (RF) power amplifiers (PAs) based on GaN high-electron-mobility transistor (HEMT) technology are understood to be responsible for the dynamic self-biasing behavior that leads to a seemingly intractable slow dynamic residual nonlinearity in communications...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2021-01, Vol.69 (1), p.529-540
Hauptverfasser:	Tome, Pedro M., Barradas, Filipe M., Nunes, Luis C., Gomes, Joao L., Cunha, Telmo R., Pedro, Jose C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog circuits Analog linearization charge trapping Circuits electron trapping Electronic circuits Frequency measurement Gallium nitride Gallium nitrides GaN high-electron-mobility transistor (HEMT) HEMTs High electron mobility transistors Logic gates long-term memory effects Modelling Power amplifiers Radio frequency self-biasing Semiconductor devices Time constant Transient analysis Trapping virtual back gate Voltage measurement
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