Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers
Charge-trapping phenomena in radio-frequency (RF) power amplifiers (PAs) based on GaN high-electron-mobility transistor (HEMT) technology are understood to be responsible for the dynamic self-biasing behavior that leads to a seemingly intractable slow dynamic residual nonlinearity in communications...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2021-01, Vol.69 (1), p.529-540 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Tome, Pedro M. Barradas, Filipe M. Nunes, Luis C. Gomes, Joao L. Cunha, Telmo R. Pedro, Jose C. |
| description | Charge-trapping phenomena in radio-frequency (RF) power amplifiers (PAs) based on GaN high-electron-mobility transistor (HEMT) technology are understood to be responsible for the dynamic self-biasing behavior that leads to a seemingly intractable slow dynamic residual nonlinearity in communications applications. For this reason, and based on recent developments in the characterization and modeling of charge-trapping phenomena, in this article we demonstrate how the dynamic self-biasing behavior of GaN HEMT-based PAs can be characterized, modeled, and compensated. First, we describe a method for the accurate characterization of the capture and emission dynamics of charge-trapping phenomena using transient two-tone large-signal RF measurements. Then, we demonstrate that the accurate modeling of these phenomena is contingent on the capture process being described by a state-variable time constant, rather than a fixed near-instantaneous time constant as is typically assumed. Finally, we propose a fully analog electronic circuit that implements an approximation of the Shockley-Read-Hall (SRH) statistics-based physical model of charge trapping to compensate the dynamic self-biasing behavior of a 15 W GaN HEMT-based PA. |
| doi_str_mv | 10.1109/TMTT.2020.3006290 |
| format | Article |
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For this reason, and based on recent developments in the characterization and modeling of charge-trapping phenomena, in this article we demonstrate how the dynamic self-biasing behavior of GaN HEMT-based PAs can be characterized, modeled, and compensated. First, we describe a method for the accurate characterization of the capture and emission dynamics of charge-trapping phenomena using transient two-tone large-signal RF measurements. Then, we demonstrate that the accurate modeling of these phenomena is contingent on the capture process being described by a state-variable time constant, rather than a fixed near-instantaneous time constant as is typically assumed. 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| subjects | Analog circuits Analog linearization charge trapping Circuits electron trapping Electronic circuits Frequency measurement Gallium nitride Gallium nitrides GaN high-electron-mobility transistor (HEMT) HEMTs High electron mobility transistors Logic gates long-term memory effects Modelling Power amplifiers Radio frequency self-biasing Semiconductor devices Time constant Transient analysis Trapping virtual back gate Voltage measurement |
| title | Characterization, Modeling, and Compensation of the Dynamic Self-Biasing Behavior of GaN HEMT-Based Power Amplifiers |
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