Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing

Both dc and OFF-state stress characteristics of vertical beta-gallium oxide (\beta -Ga 2 O 3 ) Schottky barrier diodes (SBDs) with or without ion-implanted edge termination (ET) were comparatively analyzed in this work. An implanted ET by He and Mg ions can effectively increase breakdown voltage (B...

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Veröffentlicht in:	IEEE transactions on electron devices 2020-10, Vol.67 (10), p.3948-3953
Hauptverfasser:	Zhang, Yanni, Zhang, Jincheng, Feng, Zhaoqing, Hu, Zhuangzhuang, Chen, Jiabo, Dang, Kui, Yan, Qinglong, Dong, Pengfei, Zhou, Hong, Hao, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodes Beta-gallium oxide (β-Ga₂O₃) Degradation Depletion Forward characteristics Gallium Gallium oxides implanted edge termination (ET) Ions Lattices OFF-state stress Schottky diodes Stress vertical Schottky barrier diode (SBD)
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