Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing
Both dc and OFF-state stress characteristics of vertical beta-gallium oxide (\beta -Ga 2 O 3 ) Schottky barrier diodes (SBDs) with or without ion-implanted edge termination (ET) were comparatively analyzed in this work. An implanted ET by He and Mg ions can effectively increase breakdown voltage (B...
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| Veröffentlicht in: | IEEE transactions on electron devices 2020-10, Vol.67 (10), p.3948-3953 |
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| creator | Zhang, Yanni Zhang, Jincheng Feng, Zhaoqing Hu, Zhuangzhuang Chen, Jiabo Dang, Kui Yan, Qinglong Dong, Pengfei Zhou, Hong Hao, Yue |
| description | Both dc and OFF-state stress characteristics of vertical beta-gallium oxide (\beta -Ga 2 O 3 ) Schottky barrier diodes (SBDs) with or without ion-implanted edge termination (ET) were comparatively analyzed in this work. An implanted ET by He and Mg ions can effectively increase breakdown voltage (BV) from 0.5 to 1.0 and 1.5 kV, respectively, by sacrificing minimal forward characteristics. However, SBDs with ion ET exhibited a larger degradation than SBDs without ion ET after OFF-state stressing, especially for Mg ion-implanted ET, which caused more severe lattice damage at the edge of the anode by transmission electron microscopy (TEM) verification. The OFF-state characteristics were investigated by conventional measure/stress/measure (MSM) with reverse stress biases applied from −100 to −1000 V. The ion-implanted ET brings two effects on the device characteristics: 1) the increase of Schottky barrier height ( \Phi _{B} ) in both dc and OFF-state stress characteristics caused by the virtual gate-like effect and leading to an increased {V}_{ON} and 2) the increase of {R}_{ON,SP} in the forward dc characteristics is attributed to the increase of anode resistance and lateral depletion. |
| doi_str_mv | 10.1109/TED.2020.3002327 |
| format | Article |
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An implanted ET by He and Mg ions can effectively increase breakdown voltage (BV) from 0.5 to 1.0 and 1.5 kV, respectively, by sacrificing minimal forward characteristics. However, SBDs with ion ET exhibited a larger degradation than SBDs without ion ET after OFF-state stressing, especially for Mg ion-implanted ET, which caused more severe lattice damage at the edge of the anode by transmission electron microscopy (TEM) verification. The OFF-state characteristics were investigated by conventional measure/stress/measure (MSM) with reverse stress biases applied from −100 to −1000 V. The ion-implanted ET brings two effects on the device characteristics: 1) the increase of Schottky barrier height (<inline-formula> <tex-math notation="LaTeX">\Phi _{B} </tex-math></inline-formula>) in both dc and OFF-state stress characteristics caused by the virtual gate-like effect and leading to an increased <inline-formula> <tex-math notation="LaTeX">{V}_{ON} </tex-math></inline-formula> and 2) the increase of <inline-formula> <tex-math notation="LaTeX">{R}_{ON,SP} </tex-math></inline-formula> in the forward dc characteristics is attributed to the increase of anode resistance and lateral depletion.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2020.3002327</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Anodes ; Beta-gallium oxide (β-Ga₂O₃) ; Degradation ; Depletion ; Forward characteristics ; Gallium ; Gallium oxides ; implanted edge termination (ET) ; Ions ; Lattices ; OFF-state stress ; Schottky diodes ; Stress ; vertical Schottky barrier diode (SBD)</subject><ispartof>IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3948-3953</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c180t-5b5c7b95910a3ad2d68fd777082d068f917bf55471cf2d91b2927452d38fadbb3</citedby><orcidid>0000-0002-3928-5176 ; 0000-0002-9484-2035 ; 0000-0001-7675-3947 ; 0000-0001-7332-6704 ; 0000-0002-0741-7568 ; 0000-0001-9883-8757 ; 0000-0002-7621-0237</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9123950$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9123950$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhang, Yanni</creatorcontrib><creatorcontrib>Zhang, Jincheng</creatorcontrib><creatorcontrib>Feng, Zhaoqing</creatorcontrib><creatorcontrib>Hu, Zhuangzhuang</creatorcontrib><creatorcontrib>Chen, Jiabo</creatorcontrib><creatorcontrib>Dang, Kui</creatorcontrib><creatorcontrib>Yan, Qinglong</creatorcontrib><creatorcontrib>Dong, Pengfei</creatorcontrib><creatorcontrib>Zhou, Hong</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><title>Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[Both dc and OFF-state stress characteristics of vertical beta-gallium oxide <inline-formula> <tex-math notation="LaTeX">(\beta </tex-math></inline-formula>-Ga 2 O 3 ) Schottky barrier diodes (SBDs) with or without ion-implanted edge termination (ET) were comparatively analyzed in this work. An implanted ET by He and Mg ions can effectively increase breakdown voltage (BV) from 0.5 to 1.0 and 1.5 kV, respectively, by sacrificing minimal forward characteristics. However, SBDs with ion ET exhibited a larger degradation than SBDs without ion ET after OFF-state stressing, especially for Mg ion-implanted ET, which caused more severe lattice damage at the edge of the anode by transmission electron microscopy (TEM) verification. The OFF-state characteristics were investigated by conventional measure/stress/measure (MSM) with reverse stress biases applied from −100 to −1000 V. The ion-implanted ET brings two effects on the device characteristics: 1) the increase of Schottky barrier height (<inline-formula> <tex-math notation="LaTeX">\Phi _{B} </tex-math></inline-formula>) in both dc and OFF-state stress characteristics caused by the virtual gate-like effect and leading to an increased <inline-formula> <tex-math notation="LaTeX">{V}_{ON} </tex-math></inline-formula> and 2) the increase of <inline-formula> <tex-math notation="LaTeX">{R}_{ON,SP} </tex-math></inline-formula> in the forward dc characteristics is attributed to the increase of anode resistance and lateral depletion.]]></description><subject>Anodes</subject><subject>Beta-gallium oxide (β-Ga₂O₃)</subject><subject>Degradation</subject><subject>Depletion</subject><subject>Forward characteristics</subject><subject>Gallium</subject><subject>Gallium oxides</subject><subject>implanted edge termination (ET)</subject><subject>Ions</subject><subject>Lattices</subject><subject>OFF-state stress</subject><subject>Schottky diodes</subject><subject>Stress</subject><subject>vertical Schottky barrier diode (SBD)</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjUtLAzEcxIMoWKt3wUvAc-o_r83mqH1ZKPTQ1uuS3WRr-tit2fTQr9UP4mcyUGFg5gfDDELPFAaUgn5bjUcDBgwGHIBxpm5Qj0qpiM5Edot6ADQnmuf8Hj103TZhJgTrod3scDRVxG2NU9qbJjqLx3bj8MqFg29M9G2Dk75ciL4ye_x7IVPDFhwvq-82xt0Zf5gQvAt45FvrOrxubILFZEKW0USHlzG4rvPN5hHd1Wbfuad_76P1ZLwafpL5Yjobvs9JRXOIRJayUqWWmoLhxjKb5bVVSkHOLKSsqSprKYWiVc2spiXTTAnJLM9rY8uS99HrdfcY2p-T62KxbU-hSZcFEyKDDCilqfVybXnnXHEM_mDCudCUcS2B_wF1jGKp</recordid><startdate>20201001</startdate><enddate>20201001</enddate><creator>Zhang, Yanni</creator><creator>Zhang, Jincheng</creator><creator>Feng, Zhaoqing</creator><creator>Hu, Zhuangzhuang</creator><creator>Chen, Jiabo</creator><creator>Dang, Kui</creator><creator>Yan, Qinglong</creator><creator>Dong, Pengfei</creator><creator>Zhou, Hong</creator><creator>Hao, Yue</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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An implanted ET by He and Mg ions can effectively increase breakdown voltage (BV) from 0.5 to 1.0 and 1.5 kV, respectively, by sacrificing minimal forward characteristics. However, SBDs with ion ET exhibited a larger degradation than SBDs without ion ET after OFF-state stressing, especially for Mg ion-implanted ET, which caused more severe lattice damage at the edge of the anode by transmission electron microscopy (TEM) verification. The OFF-state characteristics were investigated by conventional measure/stress/measure (MSM) with reverse stress biases applied from −100 to −1000 V. The ion-implanted ET brings two effects on the device characteristics: 1) the increase of Schottky barrier height (<inline-formula> <tex-math notation="LaTeX">\Phi _{B} </tex-math></inline-formula>) in both dc and OFF-state stress characteristics caused by the virtual gate-like effect and leading to an increased <inline-formula> <tex-math notation="LaTeX">{V}_{ON} </tex-math></inline-formula> and 2) the increase of <inline-formula> <tex-math notation="LaTeX">{R}_{ON,SP} </tex-math></inline-formula> in the forward dc characteristics is attributed to the increase of anode resistance and lateral depletion.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2020.3002327</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3928-5176</orcidid><orcidid>https://orcid.org/0000-0002-9484-2035</orcidid><orcidid>https://orcid.org/0000-0001-7675-3947</orcidid><orcidid>https://orcid.org/0000-0001-7332-6704</orcidid><orcidid>https://orcid.org/0000-0002-0741-7568</orcidid><orcidid>https://orcid.org/0000-0001-9883-8757</orcidid><orcidid>https://orcid.org/0000-0002-7621-0237</orcidid></addata></record> |
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| subjects | Anodes Beta-gallium oxide (β-Ga₂O₃) Degradation Depletion Forward characteristics Gallium Gallium oxides implanted edge termination (ET) Ions Lattices OFF-state stress Schottky diodes Stress vertical Schottky barrier diode (SBD) |
| title | Impact of Implanted Edge Termination on Vertical β-Ga2O3 Schottky Barrier Diodes Under OFF-State Stressing |
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