Hydrogenation and Gettering Compatible p-Type Contacts for Multicrystalline Silicon Cells, Free of Light, and Elevated Temperature Induced Degradation

Results for a room temperature contacting method applied to the p -type rear surface of monocrystalline and multicrystalline solar cell structures are presented. Monocrystalline silicon devices with the rear contacts prepared using the point contacting by localized dielectric breakdown method are re...

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Veröffentlicht in:	IEEE journal of photovoltaics 2020-09, Vol.10 (5), p.1232-1238
Hauptverfasser:	Western, Ned J., Bremner, Stephen P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Degradation Dielectric breakdown Dielectrics Gettering Grain boundaries High temperature Laser doping light-and-elevated-temperature-induced degradation (LeTID) Metals multicrystalline silicon (mc-Si) Optimization Performance measurement Photodegradation Photovoltaic cells Room temperature Silicon Silicon devices silicon solar cells Solar cells Surface emitting lasers Surface treatment
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