Hydrogenation and Gettering Compatible p-Type Contacts for Multicrystalline Silicon Cells, Free of Light, and Elevated Temperature Induced Degradation
Results for a room temperature contacting method applied to the p -type rear surface of monocrystalline and multicrystalline solar cell structures are presented. Monocrystalline silicon devices with the rear contacts prepared using the point contacting by localized dielectric breakdown method are re...
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| Veröffentlicht in: | IEEE journal of photovoltaics 2020-09, Vol.10 (5), p.1232-1238 |
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| container_title | IEEE journal of photovoltaics |
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| creator | Western, Ned J. Bremner, Stephen P. |
| description | Results for a room temperature contacting method applied to the p -type rear surface of monocrystalline and multicrystalline solar cell structures are presented. Monocrystalline silicon devices with the rear contacts prepared using the point contacting by localized dielectric breakdown method are reported with an efficiency of 19.2%. The devices show improved measurements of key performance metrics of ρ c of 1.6 ± 0.8 mΩcm 2 and J 0 c of 2100 ± 650 fAcm −2 . This contacting approach is also demonstrated for multicrystalline silicon cells, with no evidence of parasitic breakdown at grain boundary sites. The multicrystalline device implementation highlights a key advantage of this contacting method, namely a relatively free choice of annealing temperature. This flexibility allows process optimization such that the activation of light-and-elevated-temperature-induced degradation is prevented in hydrogenated multicrystalline silicon, while still maximizing the benefits to bulk lifetime. |
| doi_str_mv | 10.1109/JPHOTOV.2020.2999869 |
| format | Article |
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Monocrystalline silicon devices with the rear contacts prepared using the point contacting by localized dielectric breakdown method are reported with an efficiency of 19.2%. The devices show improved measurements of key performance metrics of ρ c of 1.6 ± 0.8 mΩcm 2 and J 0 c of 2100 ± 650 fAcm −2 . This contacting approach is also demonstrated for multicrystalline silicon cells, with no evidence of parasitic breakdown at grain boundary sites. The multicrystalline device implementation highlights a key advantage of this contacting method, namely a relatively free choice of annealing temperature. This flexibility allows process optimization such that the activation of light-and-elevated-temperature-induced degradation is prevented in hydrogenated multicrystalline silicon, while still maximizing the benefits to bulk lifetime.</description><subject>Degradation</subject><subject>Dielectric breakdown</subject><subject>Dielectrics</subject><subject>Gettering</subject><subject>Grain boundaries</subject><subject>High temperature</subject><subject>Laser doping</subject><subject>light-and-elevated-temperature-induced degradation (LeTID)</subject><subject>Metals</subject><subject>multicrystalline silicon (mc-Si)</subject><subject>Optimization</subject><subject>Performance measurement</subject><subject>Photodegradation</subject><subject>Photovoltaic cells</subject><subject>Room temperature</subject><subject>Silicon</subject><subject>Silicon devices</subject><subject>silicon solar cells</subject><subject>Solar cells</subject><subject>Surface emitting lasers</subject><subject>Surface treatment</subject><issn>2156-3381</issn><issn>2156-3403</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kd1OGzEQhVdVkYoCTwAXlnqbDf7ZdexLlAYCCkqlBm5Xjj1OHTm7i-1Fyov0eTEkdG5mdDTnm5FOUVwTPCEEy5vH34vVevUyoZjiCZVSCi6_FeeU1LxkFWbfv2YmyI_iMsYdzsVxzXl1XvxbHEzottCq5LoWqdage0gJgmu3aNbt-6xvPKC-XB96yEqblE4R2S6gp8Enp8MhJuW9awH9cd7pTJmB93GM7gIA6ixauu3fNP5kzz28qQQGrWHfQ1BpCIAeWjPorP2CbVDm85GL4swqH-Hy1EfF8918PVuUy9X9w-x2WWpaiVROmRVTWzFebzChcqNqYoWYMlxpqbExEiyjYsqxplyb2mDCJQgpMGwIrS1ho-LnkduH7nWAmJpdN4Q2n2xoxnJMheR5qzpu6dDFGMA2fXB7FQ4Nwc1HCM0phOYjhOYUQrZdHW0OAP5bJCGywhV7B8H0hRk</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Western, Ned J.</creator><creator>Bremner, Stephen P.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE Electronic Library (IEL) |
| subjects | Degradation Dielectric breakdown Dielectrics Gettering Grain boundaries High temperature Laser doping light-and-elevated-temperature-induced degradation (LeTID) Metals multicrystalline silicon (mc-Si) Optimization Performance measurement Photodegradation Photovoltaic cells Room temperature Silicon Silicon devices silicon solar cells Solar cells Surface emitting lasers Surface treatment |
| title | Hydrogenation and Gettering Compatible p-Type Contacts for Multicrystalline Silicon Cells, Free of Light, and Elevated Temperature Induced Degradation |
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