A 2-20-GHz 10-W High-Efficiency GaN Power Amplifier Using Reactive Matching Technique

In this article, we present the analysis, design, and implementation of a wideband 10-W monolithic microwave integrated circuit power amplifier (PA), fabricated in a low-cost 0.1- \mu \text{m} gallium nitride (GaN) on Si technology. The design is focused on the realization of a low-loss and wideban...

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