A 2-20-GHz 10-W High-Efficiency GaN Power Amplifier Using Reactive Matching Technique
In this article, we present the analysis, design, and implementation of a wideband 10-W monolithic microwave integrated circuit power amplifier (PA), fabricated in a low-cost 0.1- \mu \text{m} gallium nitride (GaN) on Si technology. The design is focused on the realization of a low-loss and wideban...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2020-07, Vol.68 (7), p.3148-3158 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Lin, Qian Wu, Hai-Feng Hua, Yu-Nan Chen, Yi-Jun Hu, Liu-Lin Liu, Lin-Sheng Chen, Shan-Ji |
| description | In this article, we present the analysis, design, and implementation of a wideband 10-W monolithic microwave integrated circuit power amplifier (PA), fabricated in a low-cost 0.1- \mu \text{m} gallium nitride (GaN) on Si technology. The design is focused on the realization of a low-loss and wideband impedance transformation networks across 2-20 GHz using a reactive matching (RM) technique. The two-stage GaN PA achieves an average output power of 40.1 dBm and a peak output power of 41.6 dBm at 13 GHz, in the CW-mode operation, with a small-signal gain of S_{21} > 25.5 dB over the entire bandwidth. The average power-added efficiency (PAE) is 21%, with a peak PAE of 29% at 6 GHz. The PA chip occupies an area of 2.9\times 2.6 mm 2 . To the best of our knowledge, the PA presented in this work demonstrates the highest broadband gain among the reported GaN-based RMPAs with a corresponding output power of about 10 W. |
| doi_str_mv | 10.1109/TMTT.2020.2993579 |
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The design is focused on the realization of a low-loss and wideband impedance transformation networks across 2-20 GHz using a reactive matching (RM) technique. The two-stage GaN PA achieves an average output power of 40.1 dBm and a peak output power of 41.6 dBm at 13 GHz, in the CW-mode operation, with a small-signal gain of <inline-formula> <tex-math notation="LaTeX">S_{21} > 25.5 </tex-math></inline-formula> dB over the entire bandwidth. The average power-added efficiency (PAE) is 21%, with a peak PAE of 29% at 6 GHz. The PA chip occupies an area of <inline-formula> <tex-math notation="LaTeX">2.9\times 2.6 </tex-math></inline-formula> mm 2 . To the best of our knowledge, the PA presented in this work demonstrates the highest broadband gain among the reported GaN-based RMPAs with a corresponding output power of about 10 W.]]></description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2020.2993579</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidths ; Broadband ; Broadband communication ; Circuit design ; Gain ; Gallium nitride ; Gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (PA) ; Gallium nitrides ; high-efficiency amplifier ; Impedance ; Ink ; Integrated circuits ; Load modeling ; Matching ; MMIC (circuits) ; Power amplifiers ; reactive matching (RM) ; Transistors</subject><ispartof>IEEE transactions on microwave theory and techniques, 2020-07, Vol.68 (7), p.3148-3158</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-5af589f27b0588e75cf60e42ba5ea917b3ac143e972be14fc10496a2988135c33</citedby><cites>FETCH-LOGICAL-c359t-5af589f27b0588e75cf60e42ba5ea917b3ac143e972be14fc10496a2988135c33</cites><orcidid>0000-0002-7548-923X ; 0000-0002-7466-7313</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9099436$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9099436$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lin, Qian</creatorcontrib><creatorcontrib>Wu, Hai-Feng</creatorcontrib><creatorcontrib>Hua, Yu-Nan</creatorcontrib><creatorcontrib>Chen, Yi-Jun</creatorcontrib><creatorcontrib>Hu, Liu-Lin</creatorcontrib><creatorcontrib>Liu, Lin-Sheng</creatorcontrib><creatorcontrib>Chen, Shan-Ji</creatorcontrib><title>A 2-20-GHz 10-W High-Efficiency GaN Power Amplifier Using Reactive Matching Technique</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description><![CDATA[In this article, we present the analysis, design, and implementation of a wideband 10-W monolithic microwave integrated circuit power amplifier (PA), fabricated in a low-cost 0.1-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> gallium nitride (GaN) on Si technology. The design is focused on the realization of a low-loss and wideband impedance transformation networks across 2-20 GHz using a reactive matching (RM) technique. The two-stage GaN PA achieves an average output power of 40.1 dBm and a peak output power of 41.6 dBm at 13 GHz, in the CW-mode operation, with a small-signal gain of <inline-formula> <tex-math notation="LaTeX">S_{21} > 25.5 </tex-math></inline-formula> dB over the entire bandwidth. The average power-added efficiency (PAE) is 21%, with a peak PAE of 29% at 6 GHz. The PA chip occupies an area of <inline-formula> <tex-math notation="LaTeX">2.9\times 2.6 </tex-math></inline-formula> mm 2 . To the best of our knowledge, the PA presented in this work demonstrates the highest broadband gain among the reported GaN-based RMPAs with a corresponding output power of about 10 W.]]></description><subject>Bandwidths</subject><subject>Broadband</subject><subject>Broadband communication</subject><subject>Circuit design</subject><subject>Gain</subject><subject>Gallium nitride</subject><subject>Gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (PA)</subject><subject>Gallium nitrides</subject><subject>high-efficiency amplifier</subject><subject>Impedance</subject><subject>Ink</subject><subject>Integrated circuits</subject><subject>Load modeling</subject><subject>Matching</subject><subject>MMIC (circuits)</subject><subject>Power amplifiers</subject><subject>reactive matching (RM)</subject><subject>Transistors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kF1LAkEUhocoyKwfEN0sdD125mt3zqWIaaAVsdLlMDvM6Ii6trsW9uvbRQkOnA_e877wEHLPYMAY4FM-z_MBBw4DjihUhhekx5TKKKYZXJIeANMUpYZrclPX63aVCnSPLIYJpxzoZPqbMKCfyTQuV3QcQnTR79wxmdjX5L388VUy3O43McR2WtRxt0w-vHVN_PbJ3DZu1V1y71a7-HXwt-Qq2E3t7869TxbP43w0pbO3yctoOKNOKGyoskFpDDwrQGntM-VCCl7ywipvkWWFsI5J4THjhWcyOAYSU8tRayaUE6JPHk---6psY-vGrMtDtWsjDZcMJUrRVp-wk8pVZV1XPph9Fbe2OhoGpqNnOnqmo2fO9Nqfh9NP9N7_6xGw9UvFHyWNaD8</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Lin, Qian</creator><creator>Wu, Hai-Feng</creator><creator>Hua, Yu-Nan</creator><creator>Chen, Yi-Jun</creator><creator>Hu, Liu-Lin</creator><creator>Liu, Lin-Sheng</creator><creator>Chen, Shan-Ji</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7548-923X</orcidid><orcidid>https://orcid.org/0000-0002-7466-7313</orcidid></search><sort><creationdate>20200701</creationdate><title>A 2-20-GHz 10-W High-Efficiency GaN Power Amplifier Using Reactive Matching Technique</title><author>Lin, Qian ; Wu, Hai-Feng ; Hua, Yu-Nan ; Chen, Yi-Jun ; Hu, Liu-Lin ; Liu, Lin-Sheng ; Chen, Shan-Ji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-5af589f27b0588e75cf60e42ba5ea917b3ac143e972be14fc10496a2988135c33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Bandwidths</topic><topic>Broadband</topic><topic>Broadband communication</topic><topic>Circuit design</topic><topic>Gain</topic><topic>Gallium nitride</topic><topic>Gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (PA)</topic><topic>Gallium nitrides</topic><topic>high-efficiency amplifier</topic><topic>Impedance</topic><topic>Ink</topic><topic>Integrated circuits</topic><topic>Load modeling</topic><topic>Matching</topic><topic>MMIC (circuits)</topic><topic>Power amplifiers</topic><topic>reactive matching (RM)</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Qian</creatorcontrib><creatorcontrib>Wu, Hai-Feng</creatorcontrib><creatorcontrib>Hua, Yu-Nan</creatorcontrib><creatorcontrib>Chen, Yi-Jun</creatorcontrib><creatorcontrib>Hu, Liu-Lin</creatorcontrib><creatorcontrib>Liu, Lin-Sheng</creatorcontrib><creatorcontrib>Chen, Shan-Ji</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lin, Qian</au><au>Wu, Hai-Feng</au><au>Hua, Yu-Nan</au><au>Chen, Yi-Jun</au><au>Hu, Liu-Lin</au><au>Liu, Lin-Sheng</au><au>Chen, Shan-Ji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 2-20-GHz 10-W High-Efficiency GaN Power Amplifier Using Reactive Matching Technique</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>68</volume><issue>7</issue><spage>3148</spage><epage>3158</epage><pages>3148-3158</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract><![CDATA[In this article, we present the analysis, design, and implementation of a wideband 10-W monolithic microwave integrated circuit power amplifier (PA), fabricated in a low-cost 0.1-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> gallium nitride (GaN) on Si technology. The design is focused on the realization of a low-loss and wideband impedance transformation networks across 2-20 GHz using a reactive matching (RM) technique. The two-stage GaN PA achieves an average output power of 40.1 dBm and a peak output power of 41.6 dBm at 13 GHz, in the CW-mode operation, with a small-signal gain of <inline-formula> <tex-math notation="LaTeX">S_{21} > 25.5 </tex-math></inline-formula> dB over the entire bandwidth. The average power-added efficiency (PAE) is 21%, with a peak PAE of 29% at 6 GHz. The PA chip occupies an area of <inline-formula> <tex-math notation="LaTeX">2.9\times 2.6 </tex-math></inline-formula> mm 2 . To the best of our knowledge, the PA presented in this work demonstrates the highest broadband gain among the reported GaN-based RMPAs with a corresponding output power of about 10 W.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2020.2993579</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0002-7548-923X</orcidid><orcidid>https://orcid.org/0000-0002-7466-7313</orcidid></addata></record> |
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| subjects | Bandwidths Broadband Broadband communication Circuit design Gain Gallium nitride Gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifier (PA) Gallium nitrides high-efficiency amplifier Impedance Ink Integrated circuits Load modeling Matching MMIC (circuits) Power amplifiers reactive matching (RM) Transistors |
| title | A 2-20-GHz 10-W High-Efficiency GaN Power Amplifier Using Reactive Matching Technique |
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