Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices
An edge termination structure with enhanced field-limiting rings (enhanced FLRs) is proposed to stabilize the breakdown voltage against the surface charge. The pitches of the enhanced rings are designed to mitigate the electric field and expand the depletion layer, which leads to an improvement of t...
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| Veröffentlicht in: | IEEE transactions on electron devices 2020-07, Vol.67 (7), p.2850-2853 |
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| container_title | IEEE transactions on electron devices |
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| creator | Hirao, Takashi Onose, Hidekatsu Yasui, Kan Mori, Mutsuhiro |
| description | An edge termination structure with enhanced field-limiting rings (enhanced FLRs) is proposed to stabilize the breakdown voltage against the surface charge. The pitches of the enhanced rings are designed to mitigate the electric field and expand the depletion layer, which leads to an improvement of the breakdown voltage. In addition, the enhanced FLR is insensitive to surface charge because the field plates completely cover the n − layer. Simulation results indicated that the enhanced FLR did not have any fluctuation of breakdown voltage against surface charge density from 0 to {1}\times {10}^{{13}}\,\,\text {cm}^{{-}{2}} , whereas conventional structures did have fluctuation. To examine the validity of the concept, we fabricated a silicon carbide (SiC) merged p-i-n Schottky diode with the proposed structure. DC bias stress tests at 150 °C over 1000 h demonstrated the breakdown voltage stability of the enhanced FLR. |
| doi_str_mv | 10.1109/TED.2020.2992577 |
| format | Article |
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The pitches of the enhanced rings are designed to mitigate the electric field and expand the depletion layer, which leads to an improvement of the breakdown voltage. In addition, the enhanced FLR is insensitive to surface charge because the field plates completely cover the n − layer. Simulation results indicated that the enhanced FLR did not have any fluctuation of breakdown voltage against surface charge density from 0 to <inline-formula> <tex-math notation="LaTeX">{1}\times {10}^{{13}}\,\,\text {cm}^{{-}{2}} </tex-math></inline-formula>, whereas conventional structures did have fluctuation. To examine the validity of the concept, we fabricated a silicon carbide (SiC) merged p-i-n Schottky diode with the proposed structure. DC bias stress tests at 150 °C over 1000 h demonstrated the breakdown voltage stability of the enhanced FLR.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2020.2992577</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>4H-silicon carbide (SiC) ; Breakdown ; Breakdown voltage ; Charge density ; Constraining ; Depletion ; edge termination ; Electric breakdown ; Electric fields ; Electronic devices ; field-limiting ring (FLR) ; high-temperature reverse bias (HTRB) ; merged p-i-n Schottky (MPS) diode ; Schottky diodes ; Silicon ; Silicon carbide ; Stress ; Structural rings ; Surface charge ; Surface treatment ; Voltage stability</subject><ispartof>IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2850-2853</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c206t-ad27e990391da0ee02e0ef50899d65203a28075f99530eb93bc3e7d64c540b03</citedby><cites>FETCH-LOGICAL-c206t-ad27e990391da0ee02e0ef50899d65203a28075f99530eb93bc3e7d64c540b03</cites><orcidid>0000-0002-8738-5059</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9096586$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9096586$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Hirao, Takashi</creatorcontrib><creatorcontrib>Onose, Hidekatsu</creatorcontrib><creatorcontrib>Yasui, Kan</creatorcontrib><creatorcontrib>Mori, Mutsuhiro</creatorcontrib><title>Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An edge termination structure with enhanced field-limiting rings (enhanced FLRs) is proposed to stabilize the breakdown voltage against the surface charge. The pitches of the enhanced rings are designed to mitigate the electric field and expand the depletion layer, which leads to an improvement of the breakdown voltage. In addition, the enhanced FLR is insensitive to surface charge because the field plates completely cover the n − layer. Simulation results indicated that the enhanced FLR did not have any fluctuation of breakdown voltage against surface charge density from 0 to <inline-formula> <tex-math notation="LaTeX">{1}\times {10}^{{13}}\,\,\text {cm}^{{-}{2}} </tex-math></inline-formula>, whereas conventional structures did have fluctuation. To examine the validity of the concept, we fabricated a silicon carbide (SiC) merged p-i-n Schottky diode with the proposed structure. DC bias stress tests at 150 °C over 1000 h demonstrated the breakdown voltage stability of the enhanced FLR.</description><subject>4H-silicon carbide (SiC)</subject><subject>Breakdown</subject><subject>Breakdown voltage</subject><subject>Charge density</subject><subject>Constraining</subject><subject>Depletion</subject><subject>edge termination</subject><subject>Electric breakdown</subject><subject>Electric fields</subject><subject>Electronic devices</subject><subject>field-limiting ring (FLR)</subject><subject>high-temperature reverse bias (HTRB)</subject><subject>merged p-i-n Schottky (MPS) diode</subject><subject>Schottky diodes</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Stress</subject><subject>Structural rings</subject><subject>Surface charge</subject><subject>Surface treatment</subject><subject>Voltage stability</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1Lw0AQxRdRsFbvgpcFz6mT3ewmc5R-2EJBsUGPYZtM2i1tUnfTiv-9WypeZpjHe2_gx9h9DIM4BnzKx6OBAAEDgShUml6wXqxUGqFO9CXrAcRZhDKT1-zG-004dZKIHuvG1Yp4Tm5nG9PZtuGftlvzcbM2TUkVn1jaVtHc7mxnmxV_D8PzWeOp8UE5Eu9avji42pTEh2vjQlndOj61q3X00W47E4SFHfK39pscH9HRluRv2VVttp7u_naf5ZNxPpxG89eX2fB5HpUCdBeZSqSECBLjygARCAKqFWSIlVYCpBEZpKpGVBJoiXJZSkornZQqgSXIPns81-5d-3Ug3xWb9uCa8LEQSaxQizTD4IKzq3St947qYu_szrifIobihLYIaIsT2uIPbYg8nCOWiP7tCKhVpuUv1M50Sg</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Hirao, Takashi</creator><creator>Onose, Hidekatsu</creator><creator>Yasui, Kan</creator><creator>Mori, Mutsuhiro</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-8738-5059</orcidid></search><sort><creationdate>20200701</creationdate><title>Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices</title><author>Hirao, Takashi ; Onose, Hidekatsu ; Yasui, Kan ; Mori, Mutsuhiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c206t-ad27e990391da0ee02e0ef50899d65203a28075f99530eb93bc3e7d64c540b03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>4H-silicon carbide (SiC)</topic><topic>Breakdown</topic><topic>Breakdown voltage</topic><topic>Charge density</topic><topic>Constraining</topic><topic>Depletion</topic><topic>edge termination</topic><topic>Electric breakdown</topic><topic>Electric fields</topic><topic>Electronic devices</topic><topic>field-limiting ring (FLR)</topic><topic>high-temperature reverse bias (HTRB)</topic><topic>merged p-i-n Schottky (MPS) diode</topic><topic>Schottky diodes</topic><topic>Silicon</topic><topic>Silicon carbide</topic><topic>Stress</topic><topic>Structural rings</topic><topic>Surface charge</topic><topic>Surface treatment</topic><topic>Voltage stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hirao, Takashi</creatorcontrib><creatorcontrib>Onose, Hidekatsu</creatorcontrib><creatorcontrib>Yasui, Kan</creatorcontrib><creatorcontrib>Mori, Mutsuhiro</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hirao, Takashi</au><au>Onose, Hidekatsu</au><au>Yasui, Kan</au><au>Mori, Mutsuhiro</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>67</volume><issue>7</issue><spage>2850</spage><epage>2853</epage><pages>2850-2853</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>An edge termination structure with enhanced field-limiting rings (enhanced FLRs) is proposed to stabilize the breakdown voltage against the surface charge. The pitches of the enhanced rings are designed to mitigate the electric field and expand the depletion layer, which leads to an improvement of the breakdown voltage. In addition, the enhanced FLR is insensitive to surface charge because the field plates completely cover the n − layer. Simulation results indicated that the enhanced FLR did not have any fluctuation of breakdown voltage against surface charge density from 0 to <inline-formula> <tex-math notation="LaTeX">{1}\times {10}^{{13}}\,\,\text {cm}^{{-}{2}} </tex-math></inline-formula>, whereas conventional structures did have fluctuation. To examine the validity of the concept, we fabricated a silicon carbide (SiC) merged p-i-n Schottky diode with the proposed structure. DC bias stress tests at 150 °C over 1000 h demonstrated the breakdown voltage stability of the enhanced FLR.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2020.2992577</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-8738-5059</orcidid></addata></record> |
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| subjects | 4H-silicon carbide (SiC) Breakdown Breakdown voltage Charge density Constraining Depletion edge termination Electric breakdown Electric fields Electronic devices field-limiting ring (FLR) high-temperature reverse bias (HTRB) merged p-i-n Schottky (MPS) diode Schottky diodes Silicon Silicon carbide Stress Structural rings Surface charge Surface treatment Voltage stability |
| title | Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices |
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