Disorder Originated Unusual Mobility in Crystalline InGaZnO4
Using calculations from first principles, the site disorder between Ga and Zn of crystalline InGaZnO 4 is shown to play key roles in its unique transport properties. The analysis based on Density Functional Theory reveals that the various types of scattering centers stem from the charge imbalance be...
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| Veröffentlicht in: | IEEE electron device letters 2020-06, Vol.41 (6), p.872-875 |
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| creator | Jegal, Yoon Kulahlioglu, Adem H. Baek, Chang-Ki Kong, Byoung Don |
| description | Using calculations from first principles, the site disorder between Ga and Zn of crystalline InGaZnO 4 is shown to play key roles in its unique transport properties. The analysis based on Density Functional Theory reveals that the various types of scattering centers stem from the charge imbalance between the ordered and disordered structures are the prime factor in explaining the carrier mobility of the crystalline InGaZnO 4 . The phonon dispersion of crystalline InGaZnO 4 is also examined to include the influence of scattering by polar optical phonons. The Hall mobility calculation based on Boltzmann transport equation under relaxation time approximation shows that the site disorders of {2.5\times }{ {10}}^{ {21}} { {\mathrm{cm}}}^{ {-3}}{\sim } {5\times }{ {10}}^{ {21}}{ {\mathrm{cm}}}^{ {-3}} can dominate the transport character. The comparisons with experimental data demonstrate excellent agreement in the wide ranges of temperature (100~300 K) and doping densities (10 16 ~10 20 cm −3 ). Our results provide a critical measure to estimate a device performance utilizing quasi-crystalline InGaZnO 4 along with a deeper understanding of its peculiar transport characters. |
| doi_str_mv | 10.1109/LED.2020.2988674 |
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| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_9072111</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9072111</ieee_id><sourcerecordid>2406701322</sourcerecordid><originalsourceid>FETCH-LOGICAL-i203t-453fe7e165843b5965ffee8fcac2e61c1189b062b2e0f8f58061d97a359842f83</originalsourceid><addsrcrecordid>eNotjb9LAzEYQIMoWKu74HLgfPX78usScJG21kKli11cjlz7RVLOXE3uhv73LdTpLY_3GHtEmCCCfVnNZxMOHCbcGqMrecVGqJQpQWlxzUZQSSwFgr5ldznvAVDKSo7Y6yzkLu0oFesUfkJ0Pe2KTRzy4Nris2tCG_pjEWIxTcfcu7YNkYplXLjvuJb37Ma7NtPDP8ds8z7_mn6Uq_ViOX1blYGD6EuphKeKUCsjRaOsVt4TGb91W04at4jGNqB5wwm88cqAxp2tnFDWSO6NGLPnS_eQur-Bcl_vuyHF87LmEnQFKDg_W08XKxBRfUjh16VjbaHiiChOhOBRyg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2406701322</pqid></control><display><type>article</type><title>Disorder Originated Unusual Mobility in Crystalline InGaZnO4</title><source>IEEE Electronic Library (IEL)</source><creator>Jegal, Yoon ; Kulahlioglu, Adem H. ; Baek, Chang-Ki ; Kong, Byoung Don</creator><creatorcontrib>Jegal, Yoon ; Kulahlioglu, Adem H. ; Baek, Chang-Ki ; Kong, Byoung Don</creatorcontrib><description>Using calculations from first principles, the site disorder between Ga and Zn of crystalline InGaZnO 4 is shown to play key roles in its unique transport properties. The analysis based on Density Functional Theory reveals that the various types of scattering centers stem from the charge imbalance between the ordered and disordered structures are the prime factor in explaining the carrier mobility of the crystalline InGaZnO 4 . The phonon dispersion of crystalline InGaZnO 4 is also examined to include the influence of scattering by polar optical phonons. The Hall mobility calculation based on Boltzmann transport equation under relaxation time approximation shows that the site disorders of <inline-formula> <tex-math notation="LaTeX"> {2.5\times }{ {10}}^{ {21}} { {\mathrm{cm}}}^{ {-3}}{\sim } {5\times }{ {10}}^{ {21}}{ {\mathrm{cm}}}^{ {-3}} </tex-math></inline-formula> can dominate the transport character. The comparisons with experimental data demonstrate excellent agreement in the wide ranges of temperature (100~300 K) and doping densities (10 16 ~10 20 cm −3 ). Our results provide a critical measure to estimate a device performance utilizing quasi-crystalline InGaZnO 4 along with a deeper understanding of its peculiar transport characters.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2020.2988674</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Boltzmann transport equation ; Carrier mobility ; Crystal structure ; Crystallinity ; Crystals ; Density functional theory ; disorder ; Dispersion ; Electric potential ; Electron mobility ; First principles ; Hall effect ; InGaZnO₄ (IGZO) ; Mathematical analysis ; mobility ; Optical scattering ; Phonons ; Relaxation time ; Scattering ; transport ; Transport equations ; Transport properties ; Zinc</subject><ispartof>IEEE electron device letters, 2020-06, Vol.41 (6), p.872-875</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-2852-6683 ; 0000-0002-6629-5695 ; 0000-0003-4072-4399</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9072111$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9072111$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jegal, Yoon</creatorcontrib><creatorcontrib>Kulahlioglu, Adem H.</creatorcontrib><creatorcontrib>Baek, Chang-Ki</creatorcontrib><creatorcontrib>Kong, Byoung Don</creatorcontrib><title>Disorder Originated Unusual Mobility in Crystalline InGaZnO4</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Using calculations from first principles, the site disorder between Ga and Zn of crystalline InGaZnO 4 is shown to play key roles in its unique transport properties. The analysis based on Density Functional Theory reveals that the various types of scattering centers stem from the charge imbalance between the ordered and disordered structures are the prime factor in explaining the carrier mobility of the crystalline InGaZnO 4 . The phonon dispersion of crystalline InGaZnO 4 is also examined to include the influence of scattering by polar optical phonons. The Hall mobility calculation based on Boltzmann transport equation under relaxation time approximation shows that the site disorders of <inline-formula> <tex-math notation="LaTeX"> {2.5\times }{ {10}}^{ {21}} { {\mathrm{cm}}}^{ {-3}}{\sim } {5\times }{ {10}}^{ {21}}{ {\mathrm{cm}}}^{ {-3}} </tex-math></inline-formula> can dominate the transport character. The comparisons with experimental data demonstrate excellent agreement in the wide ranges of temperature (100~300 K) and doping densities (10 16 ~10 20 cm −3 ). Our results provide a critical measure to estimate a device performance utilizing quasi-crystalline InGaZnO 4 along with a deeper understanding of its peculiar transport characters.</description><subject>Boltzmann transport equation</subject><subject>Carrier mobility</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Crystals</subject><subject>Density functional theory</subject><subject>disorder</subject><subject>Dispersion</subject><subject>Electric potential</subject><subject>Electron mobility</subject><subject>First principles</subject><subject>Hall effect</subject><subject>InGaZnO₄ (IGZO)</subject><subject>Mathematical analysis</subject><subject>mobility</subject><subject>Optical scattering</subject><subject>Phonons</subject><subject>Relaxation time</subject><subject>Scattering</subject><subject>transport</subject><subject>Transport equations</subject><subject>Transport properties</subject><subject>Zinc</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjb9LAzEYQIMoWKu74HLgfPX78usScJG21kKli11cjlz7RVLOXE3uhv73LdTpLY_3GHtEmCCCfVnNZxMOHCbcGqMrecVGqJQpQWlxzUZQSSwFgr5ldznvAVDKSo7Y6yzkLu0oFesUfkJ0Pe2KTRzy4Nris2tCG_pjEWIxTcfcu7YNkYplXLjvuJb37Ma7NtPDP8ds8z7_mn6Uq_ViOX1blYGD6EuphKeKUCsjRaOsVt4TGb91W04at4jGNqB5wwm88cqAxp2tnFDWSO6NGLPnS_eQur-Bcl_vuyHF87LmEnQFKDg_W08XKxBRfUjh16VjbaHiiChOhOBRyg</recordid><startdate>20200601</startdate><enddate>20200601</enddate><creator>Jegal, Yoon</creator><creator>Kulahlioglu, Adem H.</creator><creator>Baek, Chang-Ki</creator><creator>Kong, Byoung Don</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2852-6683</orcidid><orcidid>https://orcid.org/0000-0002-6629-5695</orcidid><orcidid>https://orcid.org/0000-0003-4072-4399</orcidid></search><sort><creationdate>20200601</creationdate><title>Disorder Originated Unusual Mobility in Crystalline InGaZnO4</title><author>Jegal, Yoon ; Kulahlioglu, Adem H. ; Baek, Chang-Ki ; Kong, Byoung Don</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-453fe7e165843b5965ffee8fcac2e61c1189b062b2e0f8f58061d97a359842f83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Boltzmann transport equation</topic><topic>Carrier mobility</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Crystals</topic><topic>Density functional theory</topic><topic>disorder</topic><topic>Dispersion</topic><topic>Electric potential</topic><topic>Electron mobility</topic><topic>First principles</topic><topic>Hall effect</topic><topic>InGaZnO₄ (IGZO)</topic><topic>Mathematical analysis</topic><topic>mobility</topic><topic>Optical scattering</topic><topic>Phonons</topic><topic>Relaxation time</topic><topic>Scattering</topic><topic>transport</topic><topic>Transport equations</topic><topic>Transport properties</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jegal, Yoon</creatorcontrib><creatorcontrib>Kulahlioglu, Adem H.</creatorcontrib><creatorcontrib>Baek, Chang-Ki</creatorcontrib><creatorcontrib>Kong, Byoung Don</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jegal, Yoon</au><au>Kulahlioglu, Adem H.</au><au>Baek, Chang-Ki</au><au>Kong, Byoung Don</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Disorder Originated Unusual Mobility in Crystalline InGaZnO4</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2020-06-01</date><risdate>2020</risdate><volume>41</volume><issue>6</issue><spage>872</spage><epage>875</epage><pages>872-875</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Using calculations from first principles, the site disorder between Ga and Zn of crystalline InGaZnO 4 is shown to play key roles in its unique transport properties. The analysis based on Density Functional Theory reveals that the various types of scattering centers stem from the charge imbalance between the ordered and disordered structures are the prime factor in explaining the carrier mobility of the crystalline InGaZnO 4 . The phonon dispersion of crystalline InGaZnO 4 is also examined to include the influence of scattering by polar optical phonons. The Hall mobility calculation based on Boltzmann transport equation under relaxation time approximation shows that the site disorders of <inline-formula> <tex-math notation="LaTeX"> {2.5\times }{ {10}}^{ {21}} { {\mathrm{cm}}}^{ {-3}}{\sim } {5\times }{ {10}}^{ {21}}{ {\mathrm{cm}}}^{ {-3}} </tex-math></inline-formula> can dominate the transport character. The comparisons with experimental data demonstrate excellent agreement in the wide ranges of temperature (100~300 K) and doping densities (10 16 ~10 20 cm −3 ). Our results provide a critical measure to estimate a device performance utilizing quasi-crystalline InGaZnO 4 along with a deeper understanding of its peculiar transport characters.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2020.2988674</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-2852-6683</orcidid><orcidid>https://orcid.org/0000-0002-6629-5695</orcidid><orcidid>https://orcid.org/0000-0003-4072-4399</orcidid></addata></record> |
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| subjects | Boltzmann transport equation Carrier mobility Crystal structure Crystallinity Crystals Density functional theory disorder Dispersion Electric potential Electron mobility First principles Hall effect InGaZnO₄ (IGZO) Mathematical analysis mobility Optical scattering Phonons Relaxation time Scattering transport Transport equations Transport properties Zinc |
| title | Disorder Originated Unusual Mobility in Crystalline InGaZnO4 |
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