Anomalous pressure dependence of emission in Si-doped InGaN/GaN quantum wells

Summary form only given.It has been shown theoretically and experimentally that the built-in strain in semiconductor heterostructures can be tuned with hydrostatic pressure. The pressure induced strain arises due to differences in compressibility of the materials composing a heterostructure. In InGa...

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Bibliographische Detailangaben

Hauptverfasser:	Patel, D., Vaschenko, G., Menoni, C.S., Minsky, M.S., Keller, S., Hu, E., Mishra, U.K., DenBaars, S.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitive sensors Gallium nitride Optical control Quantum dot lasers Quantum dots Shape control Size control Stimulated emission Strain control Tensile strain
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