Dynamic Slingshot Operation for Low-Operation- Voltage Nanoelectromechanical (NEM) Memory Switches
A dynamic slingshot pull-in operation is presented by using the influence of inertia and damping on the nanoelectromechanical (NEM) memory switch operation. To confirm the validity of the proposed idea, a finite element analysis (FEA) simulation, that reflects the actual cantilever beam structure, i...
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| creator | Kang, Min Hee Choi, Woo Young |
| description | A dynamic slingshot pull-in operation is presented by using the influence of inertia and damping on the nanoelectromechanical (NEM) memory switch operation. To confirm the validity of the proposed idea, a finite element analysis (FEA) simulation, that reflects the actual cantilever beam structure, is performed, and an analytical one-dimensional (1D), the parallel plate model is tested. According to the analytical and FEA data, the dynamic slingshot pull-in voltage can be achieved ~0.78 times and ~0.73 times lower than conventional pull-in voltage under near-vacuum conditions, respectively. It is also shown that the proposed dynamic slingshot operation is more effective for lowering operation voltage (VDD) and boosting the chip density of complementary-metal-oxide-semiconductor (CMOS)NEM hybrid reconfigurable logic (RL) circuits than the static slingshot operation. |
| doi_str_mv | 10.1109/ACCESS.2020.2985105 |
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To confirm the validity of the proposed idea, a finite element analysis (FEA) simulation, that reflects the actual cantilever beam structure, is performed, and an analytical one-dimensional (1D), the parallel plate model is tested. According to the analytical and FEA data, the dynamic slingshot pull-in voltage can be achieved ~0.78 times and ~0.73 times lower than conventional pull-in voltage under near-vacuum conditions, respectively. It is also shown that the proposed dynamic slingshot operation is more effective for lowering operation voltage (VDD) and boosting the chip density of complementary-metal-oxide-semiconductor (CMOS)NEM hybrid reconfigurable logic (RL) circuits than the static slingshot operation.</description><identifier>ISSN: 2169-3536</identifier><identifier>EISSN: 2169-3536</identifier><identifier>DOI: 10.1109/ACCESS.2020.2985105</identifier><identifier>CODEN: IAECCG</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Analytical models ; Cantilever beams ; CMOS ; Complementary-metal-oxide-semiconductor-nanoelectromechanical (CMOS-NEM) hybrid reconfigurable logic (RL) circuits ; Damping ; Dimensional analysis ; dynamic slingshot pull-in ; Electric potential ; Finite element method ; Metal oxides ; Metals ; Nanoelectromechanical systems ; operation voltage (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">V DD) ; Parallel plates ; Routing ; Structural beams ; Switches ; Voltage</subject><ispartof>IEEE access, 2020, Vol.8, p.65683-65688</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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To confirm the validity of the proposed idea, a finite element analysis (FEA) simulation, that reflects the actual cantilever beam structure, is performed, and an analytical one-dimensional (1D), the parallel plate model is tested. According to the analytical and FEA data, the dynamic slingshot pull-in voltage can be achieved ~0.78 times and ~0.73 times lower than conventional pull-in voltage under near-vacuum conditions, respectively. 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To confirm the validity of the proposed idea, a finite element analysis (FEA) simulation, that reflects the actual cantilever beam structure, is performed, and an analytical one-dimensional (1D), the parallel plate model is tested. According to the analytical and FEA data, the dynamic slingshot pull-in voltage can be achieved ~0.78 times and ~0.73 times lower than conventional pull-in voltage under near-vacuum conditions, respectively. It is also shown that the proposed dynamic slingshot operation is more effective for lowering operation voltage (VDD) and boosting the chip density of complementary-metal-oxide-semiconductor (CMOS)NEM hybrid reconfigurable logic (RL) circuits than the static slingshot operation.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/ACCESS.2020.2985105</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-4663-5154</orcidid><orcidid>https://orcid.org/0000-0002-5515-2912</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Analytical models Cantilever beams CMOS Complementary-metal-oxide-semiconductor-nanoelectromechanical (CMOS-NEM) hybrid reconfigurable logic (RL) circuits Damping Dimensional analysis dynamic slingshot pull-in Electric potential Finite element method Metal oxides Metals Nanoelectromechanical systems operation voltage (<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">V DD) Parallel plates Routing Structural beams Switches Voltage |
| title | Dynamic Slingshot Operation for Low-Operation- Voltage Nanoelectromechanical (NEM) Memory Switches |
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