Advanced model and analysis for series resistance in sub-100 nm CMOS including poly depletion and overlap doping gradient effect
An advanced series resistance model is developed for characterizing a heavily doped shallower source/drain extension (SDE), polysilicon gate depletion effects, doping gradient effect in SDE to gate overlap region, relatively enlarged sidewall length, a silicide-diffusion contact system, and a high-/...
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| creator | Seong Dong Kim Cheol-Min Park Woo, J.C.S. |
| description | An advanced series resistance model is developed for characterizing a heavily doped shallower source/drain extension (SDE), polysilicon gate depletion effects, doping gradient effect in SDE to gate overlap region, relatively enlarged sidewall length, a silicide-diffusion contact system, and a high-/spl kappa/ dielectric sidewall. The proposed model predicts that silicide-diffusion contact resistance and overlap resistance will be major components in total series resistance of future scaled sub-100 nm MOSFETs, The series resistance can be dramatically reduced through controlling both abruptness of SDE profile and silicide Schottky barrier engineering. |
| doi_str_mv | 10.1109/IEDM.2000.904420 |
| format | Conference Proceeding |
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The proposed model predicts that silicide-diffusion contact resistance and overlap resistance will be major components in total series resistance of future scaled sub-100 nm MOSFETs, The series resistance can be dramatically reduced through controlling both abruptness of SDE profile and silicide Schottky barrier engineering.</description><identifier>ISBN: 0780364384</identifier><identifier>ISBN: 9780780364387</identifier><identifier>DOI: 10.1109/IEDM.2000.904420</identifier><language>eng</language><publisher>IEEE</publisher><subject>Contact resistance ; Doping profiles ; Electric resistance ; Electronic mail ; High-K gate dielectrics ; Semiconductor device modeling ; Semiconductor process modeling ; Solid modeling ; Surface resistance ; Voltage</subject><ispartof>International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. 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The proposed model predicts that silicide-diffusion contact resistance and overlap resistance will be major components in total series resistance of future scaled sub-100 nm MOSFETs, The series resistance can be dramatically reduced through controlling both abruptness of SDE profile and silicide Schottky barrier engineering.</description><subject>Contact resistance</subject><subject>Doping profiles</subject><subject>Electric resistance</subject><subject>Electronic mail</subject><subject>High-K gate dielectrics</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor process modeling</subject><subject>Solid modeling</subject><subject>Surface resistance</subject><subject>Voltage</subject><isbn>0780364384</isbn><isbn>9780780364387</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9j0-LwjAUxAMiuGrvy57eF7C-tulaj-If1oPsYb1LbF4lkiYhqUJvfnSr69nDMDC_YWAY-0wwThKcT7fr1S5OETGeI-cp9tgQZwVm3zwr-IBFIZw7iDznRZp_sNtCXoUpSUJtJWkQRnYSug0qQGU9BPKKAnjqgubRBGUgXI6TBBFMDcvd718XlfoilTmBs7oFSU5To6x5ztkreS0cSOsejZMXUpFpgKqKymbM-pXQgaKXj9jXZr1f_kwUER2cV7Xw7eH_S_YW3gEZ1k7f</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Seong Dong Kim</creator><creator>Cheol-Min Park</creator><creator>Woo, J.C.S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>Advanced model and analysis for series resistance in sub-100 nm CMOS including poly depletion and overlap doping gradient effect</title><author>Seong Dong Kim ; Cheol-Min Park ; Woo, J.C.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_9044203</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Contact resistance</topic><topic>Doping profiles</topic><topic>Electric resistance</topic><topic>Electronic mail</topic><topic>High-K gate dielectrics</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor process modeling</topic><topic>Solid modeling</topic><topic>Surface resistance</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Seong Dong Kim</creatorcontrib><creatorcontrib>Cheol-Min Park</creatorcontrib><creatorcontrib>Woo, J.C.S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Seong Dong Kim</au><au>Cheol-Min Park</au><au>Woo, J.C.S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Advanced model and analysis for series resistance in sub-100 nm CMOS including poly depletion and overlap doping gradient effect</atitle><btitle>International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)</btitle><stitle>IEDM</stitle><date>2000</date><risdate>2000</risdate><spage>723</spage><epage>726</epage><pages>723-726</pages><isbn>0780364384</isbn><isbn>9780780364387</isbn><abstract>An advanced series resistance model is developed for characterizing a heavily doped shallower source/drain extension (SDE), polysilicon gate depletion effects, doping gradient effect in SDE to gate overlap region, relatively enlarged sidewall length, a silicide-diffusion contact system, and a high-/spl kappa/ dielectric sidewall. The proposed model predicts that silicide-diffusion contact resistance and overlap resistance will be major components in total series resistance of future scaled sub-100 nm MOSFETs, The series resistance can be dramatically reduced through controlling both abruptness of SDE profile and silicide Schottky barrier engineering.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2000.904420</doi></addata></record> |
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| identifier | ISBN: 0780364384 |
| ispartof | International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.723-726 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Contact resistance Doping profiles Electric resistance Electronic mail High-K gate dielectrics Semiconductor device modeling Semiconductor process modeling Solid modeling Surface resistance Voltage |
| title | Advanced model and analysis for series resistance in sub-100 nm CMOS including poly depletion and overlap doping gradient effect |
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