Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs
Muon-induced single event upset (SEU) is predicted to increase with technology scaling. Although previous works investigated the dependencies of muon-induced SEU cross sections on energy, voltage, and technology, the angle of incidence of terrestrial muons is not always perpendicular to the chip sur...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2020-07, Vol.67 (7), p.1566-1572 |
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| creator | Liao, Wang Hashimoto, Masanori Manabe, Seiya Watanabe, Yukinobu Abe, Shin-ichiro Tampo, Motonobu Takeshita, Soshi Miyake, Yasuhiro |
| description | Muon-induced single event upset (SEU) is predicted to increase with technology scaling. Although previous works investigated the dependencies of muon-induced SEU cross sections on energy, voltage, and technology, the angle of incidence of terrestrial muons is not always perpendicular to the chip surface. Consequently, the impact of the angle of incidence of muons on SEUs should be evaluated. This study conducts negative muon irradiation tests on bulk and fully depleted silicon on insulator static random access memories at two angles of incidence: 0° (vertical) and 45° (tilted). The tilted incidence drifts the muon energy peak to a higher energy as expected. However, the SEU characteristics in the bulk device between the vertical and tilted incidences, including the voltage dependences of the SEU cross sections and multiple cells upset patterns, are similar despite the unexpected impact on the SEU cross section at an operating voltage of 0.4 V. |
| doi_str_mv | 10.1109/TNS.2020.2976125 |
| format | Article |
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Although previous works investigated the dependencies of muon-induced SEU cross sections on energy, voltage, and technology, the angle of incidence of terrestrial muons is not always perpendicular to the chip surface. Consequently, the impact of the angle of incidence of muons on SEUs should be evaluated. This study conducts negative muon irradiation tests on bulk and fully depleted silicon on insulator static random access memories at two angles of incidence: 0° (vertical) and 45° (tilted). The tilted incidence drifts the muon energy peak to a higher energy as expected. However, the SEU characteristics in the bulk device between the vertical and tilted incidences, including the voltage dependences of the SEU cross sections and multiple cells upset patterns, are similar despite the unexpected impact on the SEU cross section at an operating voltage of 0.4 V.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2020.2976125</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Angle of incidences ; Cross-sections ; Electric potential ; Energy ; Incidence angle ; Irradiation ; Mesons ; Muons ; negative muons ; Radiation ; Radiation effects ; Silicon-on-insulator ; single event upset (SEU) ; Single event upsets ; SRAM cells ; SRAM chips ; static random access memories (SRAMs) ; Static random access memory ; Technology ; Terrestrial environments ; Voltage</subject><ispartof>IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1566-1572</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Angle of incidences Cross-sections Electric potential Energy Incidence angle Irradiation Mesons Muons negative muons Radiation Radiation effects Silicon-on-insulator single event upset (SEU) Single event upsets SRAM cells SRAM chips static random access memories (SRAMs) Static random access memory Technology Terrestrial environments Voltage |
| title | Impact of the Angle of Incidence on Negative Muon-Induced SEU Cross Sections of 65-nm Bulk and FDSOI SRAMs |
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