A High-Performance GaN-Modified Nonuniform Distributed Power Amplifier

This article proposes a modified nonuniform distributed power amplifier (NDPA) design to increase the output power and power-added efficiency (PAE) in wideband. In the proposed NDPA, drain-line impedances are recalculated, including the drain-source capacitances, which cannot be ignored as the trans...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2020-05, Vol.68 (5), p.1729-1740
Hauptverfasser:	Kim, Jihoon, Kwon, Youngwoo
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifier design Broadband Circuit design Design modifications Efficiency Electric power distribution Field effect transistors Gallium nitride Gallium nitrides GaN Impedance Integrated circuits Logic gates MMIC (circuits) nonuniform distributed power amplifier (NDPA) Power amplifiers Power gain Power generation programmable Semiconductor devices Standing waves Transistors Wideband
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