Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2
In this work, we have demonstrated high-performance lateral \beta -Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate and source connected field-plate structures. Dep...
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| creator | Lv, Yuanjie Liu, Hongyu Zhou, Xingye Wang, Yuangang Song, Xubo Cai, Yuncong Yan, Qinglong Wang, Chenlu Liang, Shixiong Zhang, Jincheng Feng, Zhihong Zhou, Hong Cai, Shujun Hao, Yue |
| description | In this work, we have demonstrated high-performance lateral \beta -Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate and source connected field-plate structures. Depletion-mode (D-mode) \beta -Ga 2 O 3 MOSFETs with gate-to-drain distance ( \text{L}_{\sf GD} ) of 4.8~\mu \text{m} /17.8 \mu \text{m} demonstrate a BV of 1.4 kV/2.9 kV and specific ON-resistance ( \text{R}_{ \mathrm{\scriptscriptstyle ON}, {\sf sp}} ) of 7.08 \text{m}\Omega \cdot cm 2 /46.2 \text{m}\Omega \cdot cm 2 , respectively, yielding a high P-FOM of 277 MW/cm 2 and averaged electrical field of 2.9 MV/cm for the device with \text{L}_{\sf GD} = {\sf 4.8}\,\, \mu \text{m} . To the best of all the authors' knowledge, this P-FOM of 277 MW/cm 2 and BV = 2.9 kV are the highest values among all the lateral D-mode \beta -Ga 2 O 3 MOSFETs. Combined with negligible gate pulsed and drain pulsed current collapse and drain current on/off ratio of 10 9 , these \beta -Ga 2 O 3 MOSFETs show a great potential for future power electronic applications. |
| doi_str_mv | 10.1109/LED.2020.2974515 |
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Depletion-mode (D-mode) <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs with gate-to-drain distance (<inline-formula> <tex-math notation="LaTeX">\text{L}_{\sf GD} </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">4.8~\mu \text{m} </tex-math></inline-formula>/17.8 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> demonstrate a BV of 1.4 kV/2.9 kV and specific ON-resistance (<inline-formula> <tex-math notation="LaTeX">\text{R}_{ \mathrm{\scriptscriptstyle ON}, {\sf sp}} </tex-math></inline-formula>) of 7.08 <inline-formula> <tex-math notation="LaTeX">\text{m}\Omega \cdot </tex-math></inline-formula>cm 2 /46.2 <inline-formula> <tex-math notation="LaTeX">\text{m}\Omega \cdot </tex-math></inline-formula>cm 2 , respectively, yielding a high P-FOM of 277 MW/cm 2 and averaged electrical field of 2.9 MV/cm for the device with <inline-formula> <tex-math notation="LaTeX">\text{L}_{\sf GD} = {\sf 4.8}\,\, \mu \text{m} </tex-math></inline-formula>. To the best of all the authors' knowledge, this P-FOM of 277 MW/cm 2 and BV = 2.9 kV are the highest values among all the lateral D-mode <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs. Combined with negligible gate pulsed and drain pulsed current collapse and drain current on/off ratio of 10 9 , these <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs show a great potential for future power electronic applications.]]></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2020.2974515</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">β -Ga₂O₃ MOSFETs ; breakdown voltage ; Depletion ; Field effect transistors ; field plate ; Figure of merit ; Gallium oxides ; Logic gates ; MOSFET ; MOSFETs ; Object recognition ; Performance evaluation ; Plates (structural members) ; power figure-of-merit ; Pulsed current ; Rapid thermal annealing ; Semiconductor devices ; Silicon compounds ; Substrates</subject><ispartof>IEEE electron device letters, 2020-04, Vol.41 (4), p.537-540</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-9207-8344 ; 0000-0001-9801-3827 ; 0000-0002-3928-5176 ; 0000-0001-6939-4237 ; 0000-0002-0741-7568 ; 0000-0002-9644-4014 ; 0000-0002-3806-8647 ; 0000-0002-4240-7875 ; 0000-0001-7332-6704</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9000829$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9000829$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lv, Yuanjie</creatorcontrib><creatorcontrib>Liu, Hongyu</creatorcontrib><creatorcontrib>Zhou, Xingye</creatorcontrib><creatorcontrib>Wang, Yuangang</creatorcontrib><creatorcontrib>Song, Xubo</creatorcontrib><creatorcontrib>Cai, Yuncong</creatorcontrib><creatorcontrib>Yan, Qinglong</creatorcontrib><creatorcontrib>Wang, Chenlu</creatorcontrib><creatorcontrib>Liang, Shixiong</creatorcontrib><creatorcontrib>Zhang, Jincheng</creatorcontrib><creatorcontrib>Feng, Zhihong</creatorcontrib><creatorcontrib>Zhou, Hong</creatorcontrib><creatorcontrib>Cai, Shujun</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><title>Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description><![CDATA[In this work, we have demonstrated high-performance lateral <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate and source connected field-plate structures. Depletion-mode (D-mode) <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs with gate-to-drain distance (<inline-formula> <tex-math notation="LaTeX">\text{L}_{\sf GD} </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">4.8~\mu \text{m} </tex-math></inline-formula>/17.8 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> demonstrate a BV of 1.4 kV/2.9 kV and specific ON-resistance (<inline-formula> <tex-math notation="LaTeX">\text{R}_{ \mathrm{\scriptscriptstyle ON}, {\sf sp}} </tex-math></inline-formula>) of 7.08 <inline-formula> <tex-math notation="LaTeX">\text{m}\Omega \cdot </tex-math></inline-formula>cm 2 /46.2 <inline-formula> <tex-math notation="LaTeX">\text{m}\Omega \cdot </tex-math></inline-formula>cm 2 , respectively, yielding a high P-FOM of 277 MW/cm 2 and averaged electrical field of 2.9 MV/cm for the device with <inline-formula> <tex-math notation="LaTeX">\text{L}_{\sf GD} = {\sf 4.8}\,\, \mu \text{m} </tex-math></inline-formula>. To the best of all the authors' knowledge, this P-FOM of 277 MW/cm 2 and BV = 2.9 kV are the highest values among all the lateral D-mode <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs. Combined with negligible gate pulsed and drain pulsed current collapse and drain current on/off ratio of 10 9 , these <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs show a great potential for future power electronic applications.]]></description><subject><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">β -Ga₂O₃ MOSFETs</subject><subject>breakdown voltage</subject><subject>Depletion</subject><subject>Field effect transistors</subject><subject>field plate</subject><subject>Figure of merit</subject><subject>Gallium oxides</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Object recognition</subject><subject>Performance evaluation</subject><subject>Plates (structural members)</subject><subject>power figure-of-merit</subject><subject>Pulsed current</subject><subject>Rapid thermal annealing</subject><subject>Semiconductor devices</subject><subject>Silicon compounds</subject><subject>Substrates</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjctKAzEYRoMoOFb3gpuA62n_3JOl1F6EKRUsdDmkk6RNaZ2amUF8LR_EZ3Kkrr6zOJwPoXsCQ0LAjIrJ85AChSE1igsiLlBGhNA5CMkuUQaKk5wRkNfopmn2AIRzxTM0LWzrkz3gn-98ZumS4cXybTpZNXgd2x2ex-0Ov9afPuFp3HbJ4zrghU-x_QOqFF6sR9WR3qKrYA-Nv_vfAVr1kfE8L5azl_FTkUeuZS68MM5sKnAcmNAb7YBKQ2lwgYN1npkeiJeiqkBTppzSjMhgKx-csYGyAXo8Z0-p_uh805b7ukvv_WNJmWaMSWNkbz2crei9L08pHm36Kg1AHzXsFwjrUzM</recordid><startdate>202004</startdate><enddate>202004</enddate><creator>Lv, Yuanjie</creator><creator>Liu, Hongyu</creator><creator>Zhou, Xingye</creator><creator>Wang, Yuangang</creator><creator>Song, Xubo</creator><creator>Cai, Yuncong</creator><creator>Yan, Qinglong</creator><creator>Wang, Chenlu</creator><creator>Liang, Shixiong</creator><creator>Zhang, Jincheng</creator><creator>Feng, Zhihong</creator><creator>Zhou, Hong</creator><creator>Cai, Shujun</creator><creator>Hao, Yue</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9207-8344</orcidid><orcidid>https://orcid.org/0000-0001-9801-3827</orcidid><orcidid>https://orcid.org/0000-0002-3928-5176</orcidid><orcidid>https://orcid.org/0000-0001-6939-4237</orcidid><orcidid>https://orcid.org/0000-0002-0741-7568</orcidid><orcidid>https://orcid.org/0000-0002-9644-4014</orcidid><orcidid>https://orcid.org/0000-0002-3806-8647</orcidid><orcidid>https://orcid.org/0000-0002-4240-7875</orcidid><orcidid>https://orcid.org/0000-0001-7332-6704</orcidid></search><sort><creationdate>202004</creationdate><title>Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2</title><author>Lv, Yuanjie ; Liu, Hongyu ; Zhou, Xingye ; Wang, Yuangang ; Song, Xubo ; Cai, Yuncong ; Yan, Qinglong ; Wang, Chenlu ; Liang, Shixiong ; Zhang, Jincheng ; Feng, Zhihong ; Zhou, Hong ; Cai, Shujun ; Hao, Yue</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i486-5e59d9bc0d40358b8d026922fdf40ade39df41e65cc08237d78316facefd9af23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic><italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">β -Ga₂O₃ MOSFETs</topic><topic>breakdown voltage</topic><topic>Depletion</topic><topic>Field effect transistors</topic><topic>field plate</topic><topic>Figure of merit</topic><topic>Gallium oxides</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Object recognition</topic><topic>Performance evaluation</topic><topic>Plates (structural members)</topic><topic>power figure-of-merit</topic><topic>Pulsed current</topic><topic>Rapid thermal annealing</topic><topic>Semiconductor devices</topic><topic>Silicon compounds</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lv, Yuanjie</creatorcontrib><creatorcontrib>Liu, Hongyu</creatorcontrib><creatorcontrib>Zhou, Xingye</creatorcontrib><creatorcontrib>Wang, Yuangang</creatorcontrib><creatorcontrib>Song, Xubo</creatorcontrib><creatorcontrib>Cai, Yuncong</creatorcontrib><creatorcontrib>Yan, Qinglong</creatorcontrib><creatorcontrib>Wang, Chenlu</creatorcontrib><creatorcontrib>Liang, Shixiong</creatorcontrib><creatorcontrib>Zhang, Jincheng</creatorcontrib><creatorcontrib>Feng, Zhihong</creatorcontrib><creatorcontrib>Zhou, Hong</creatorcontrib><creatorcontrib>Cai, Shujun</creatorcontrib><creatorcontrib>Hao, Yue</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lv, Yuanjie</au><au>Liu, Hongyu</au><au>Zhou, Xingye</au><au>Wang, Yuangang</au><au>Song, Xubo</au><au>Cai, Yuncong</au><au>Yan, Qinglong</au><au>Wang, Chenlu</au><au>Liang, Shixiong</au><au>Zhang, Jincheng</au><au>Feng, Zhihong</au><au>Zhou, Hong</au><au>Cai, Shujun</au><au>Hao, Yue</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2020-04</date><risdate>2020</risdate><volume>41</volume><issue>4</issue><spage>537</spage><epage>540</epage><pages>537-540</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract><![CDATA[In this work, we have demonstrated high-performance lateral <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate and source connected field-plate structures. Depletion-mode (D-mode) <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs with gate-to-drain distance (<inline-formula> <tex-math notation="LaTeX">\text{L}_{\sf GD} </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">4.8~\mu \text{m} </tex-math></inline-formula>/17.8 <inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> demonstrate a BV of 1.4 kV/2.9 kV and specific ON-resistance (<inline-formula> <tex-math notation="LaTeX">\text{R}_{ \mathrm{\scriptscriptstyle ON}, {\sf sp}} </tex-math></inline-formula>) of 7.08 <inline-formula> <tex-math notation="LaTeX">\text{m}\Omega \cdot </tex-math></inline-formula>cm 2 /46.2 <inline-formula> <tex-math notation="LaTeX">\text{m}\Omega \cdot </tex-math></inline-formula>cm 2 , respectively, yielding a high P-FOM of 277 MW/cm 2 and averaged electrical field of 2.9 MV/cm for the device with <inline-formula> <tex-math notation="LaTeX">\text{L}_{\sf GD} = {\sf 4.8}\,\, \mu \text{m} </tex-math></inline-formula>. To the best of all the authors' knowledge, this P-FOM of 277 MW/cm 2 and BV = 2.9 kV are the highest values among all the lateral D-mode <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs. Combined with negligible gate pulsed and drain pulsed current collapse and drain current on/off ratio of 10 9 , these <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 MOSFETs show a great potential for future power electronic applications.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2020.2974515</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-9207-8344</orcidid><orcidid>https://orcid.org/0000-0001-9801-3827</orcidid><orcidid>https://orcid.org/0000-0002-3928-5176</orcidid><orcidid>https://orcid.org/0000-0001-6939-4237</orcidid><orcidid>https://orcid.org/0000-0002-0741-7568</orcidid><orcidid>https://orcid.org/0000-0002-9644-4014</orcidid><orcidid>https://orcid.org/0000-0002-3806-8647</orcidid><orcidid>https://orcid.org/0000-0002-4240-7875</orcidid><orcidid>https://orcid.org/0000-0001-7332-6704</orcidid></addata></record> |
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| subjects | <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">β -Ga₂O₃ MOSFETs breakdown voltage Depletion Field effect transistors field plate Figure of merit Gallium oxides Logic gates MOSFET MOSFETs Object recognition Performance evaluation Plates (structural members) power figure-of-merit Pulsed current Rapid thermal annealing Semiconductor devices Silicon compounds Substrates |
| title | Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2 |
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