Accurate Measurement of Dynamic on-State Resistances of GaN Devices Under Reverse and Forward Conduction in High Frequency Power Converter

Because of trapped charges in GaN transistor structure, device dynamic on -state resistance R_\mathrm{DSon} is increased when it is operated in high frequency switched power converters, in which device is possibly operated by zero voltage switching (ZVS) to reduce its turn- on switching losses. When...

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Veröffentlicht in:	IEEE transactions on power electronics 2020-09, Vol.35 (9), p.9652-9662
Hauptverfasser:	Li, Ke, Videt, Arnaud, Idir, Nadir, Evans, Paul Leonard, Johnson, Christopher Mark
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits Current measurement Dynamic <sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">on -state resistance Dynamic response Electrical resistance measurement Engineering Sciences Finishes forward conduction Frequency measurement Gallium nitride Gallium nitrides GaN transistor High frequencies high switching frequency Inductance Loss measurement Parasitics (electronics) Power converters Power loss reverse conduction Semiconductor device measurement Semiconductor devices Sensitivity soft switching Switches Switching Transistors Voltage measurement
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