Short-wavelength InGaAlP visible laser diodes
Results achieved on the operation of short-wavelength InGaAlP visible-light laser diodes are described. It is found that there is a strong correlation between operation temperature and oscillation wavelength. The deterioration of favorable temperature characteristics in the short-wavelength region i...
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| Veröffentlicht in: | IEEE journal of quantum electronics 1991-06, Vol.27 (6), p.1476-1482 |
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| container_end_page | 1482 |
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| container_issue | 6 |
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| container_title | IEEE journal of quantum electronics |
| container_volume | 27 |
| creator | Hatakoshi, G. Itaya, K. Ishikawa, M. Okajima, M. Uematsu, Y. |
| description | Results achieved on the operation of short-wavelength InGaAlP visible-light laser diodes are described. It is found that there is a strong correlation between operation temperature and oscillation wavelength. The deterioration of favorable temperature characteristics in the short-wavelength region is attributed to an increase in the leakage current, which originates in a small conduction-band discontinuity inherent in the InGaAlP material system. The introduction of a highly doped p-cladding layer improves these temperature characteristics. Short-wavelength oscillation at 630-nm-band wavelength was achieved for transverse-mode stabilized InGaAlP lasers.< > |
| doi_str_mv | 10.1109/3.89966 |
| format | Article |
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It is found that there is a strong correlation between operation temperature and oscillation wavelength. The deterioration of favorable temperature characteristics in the short-wavelength region is attributed to an increase in the leakage current, which originates in a small conduction-band discontinuity inherent in the InGaAlP material system. The introduction of a highly doped p-cladding layer improves these temperature characteristics. Short-wavelength oscillation at 630-nm-band wavelength was achieved for transverse-mode stabilized InGaAlP lasers.< ></description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.89966</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Diode lasers ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Information processing ; Laser stability ; Lasers ; Leakage current ; Light sources ; Optical materials ; Optics ; Photonic band gap ; Physics ; Power generation ; Power lasers ; Semiconductor lasers; laser diodes ; Temperature</subject><ispartof>IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1476-1482</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c301t-f02e6bde5e46f4b950e3ebf111130c8a2e7e3ae2b2fefe63f30629d7413e5d8e3</citedby><cites>FETCH-LOGICAL-c301t-f02e6bde5e46f4b950e3ebf111130c8a2e7e3ae2b2fefe63f30629d7413e5d8e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/89966$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/89966$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4955744$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Hatakoshi, G.</creatorcontrib><creatorcontrib>Itaya, K.</creatorcontrib><creatorcontrib>Ishikawa, M.</creatorcontrib><creatorcontrib>Okajima, M.</creatorcontrib><creatorcontrib>Uematsu, Y.</creatorcontrib><title>Short-wavelength InGaAlP visible laser diodes</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>Results achieved on the operation of short-wavelength InGaAlP visible-light laser diodes are described. It is found that there is a strong correlation between operation temperature and oscillation wavelength. The deterioration of favorable temperature characteristics in the short-wavelength region is attributed to an increase in the leakage current, which originates in a small conduction-band discontinuity inherent in the InGaAlP material system. The introduction of a highly doped p-cladding layer improves these temperature characteristics. Short-wavelength oscillation at 630-nm-band wavelength was achieved for transverse-mode stabilized InGaAlP lasers.< ></description><subject>Diode lasers</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Information processing</subject><subject>Laser stability</subject><subject>Lasers</subject><subject>Leakage current</subject><subject>Light sources</subject><subject>Optical materials</subject><subject>Optics</subject><subject>Photonic band gap</subject><subject>Physics</subject><subject>Power generation</subject><subject>Power lasers</subject><subject>Semiconductor lasers; laser diodes</subject><subject>Temperature</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNo9kM9LwzAYhoMoOKd49taD6CkzP9vkOMacg4GCeg5p-8VFsnYm3cT_3mrH3svHy_fwHF6ErimZUEr0A58orfP8BI2olArTgvJTNCKEKqypLs7RRUqffRVCkRHCr-s2dvjb7iFA89Gts2WzsNPwku198mWALNgEMat9W0O6RGfOhgRXhztG74_zt9kTXj0vlrPpClec0A47wiAva5AgcidKLQlwKB3tw0mlLIMCuAVWMgcOcu44yZmuC0E5yFoBH6O7wbuN7dcOUmc2PlUQgm2g3SXDlCxEwWgP3g9gFduUIjizjX5j44-hxPzNYbj5n6Mnbw9KmyobXLRN5dMRF1r2StFjNwPmAeD4HRS_5Ztl3A</recordid><startdate>19910601</startdate><enddate>19910601</enddate><creator>Hatakoshi, G.</creator><creator>Itaya, K.</creator><creator>Ishikawa, M.</creator><creator>Okajima, M.</creator><creator>Uematsu, Y.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19910601</creationdate><title>Short-wavelength InGaAlP visible laser diodes</title><author>Hatakoshi, G. ; Itaya, K. ; Ishikawa, M. ; Okajima, M. ; Uematsu, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-f02e6bde5e46f4b950e3ebf111130c8a2e7e3ae2b2fefe63f30629d7413e5d8e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Diode lasers</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Information processing</topic><topic>Laser stability</topic><topic>Lasers</topic><topic>Leakage current</topic><topic>Light sources</topic><topic>Optical materials</topic><topic>Optics</topic><topic>Photonic band gap</topic><topic>Physics</topic><topic>Power generation</topic><topic>Power lasers</topic><topic>Semiconductor lasers; laser diodes</topic><topic>Temperature</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hatakoshi, G.</creatorcontrib><creatorcontrib>Itaya, K.</creatorcontrib><creatorcontrib>Ishikawa, M.</creatorcontrib><creatorcontrib>Okajima, M.</creatorcontrib><creatorcontrib>Uematsu, Y.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hatakoshi, G.</au><au>Itaya, K.</au><au>Ishikawa, M.</au><au>Okajima, M.</au><au>Uematsu, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Short-wavelength InGaAlP visible laser diodes</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1991-06-01</date><risdate>1991</risdate><volume>27</volume><issue>6</issue><spage>1476</spage><epage>1482</epage><pages>1476-1482</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>Results achieved on the operation of short-wavelength InGaAlP visible-light laser diodes are described. It is found that there is a strong correlation between operation temperature and oscillation wavelength. The deterioration of favorable temperature characteristics in the short-wavelength region is attributed to an increase in the leakage current, which originates in a small conduction-band discontinuity inherent in the InGaAlP material system. The introduction of a highly doped p-cladding layer improves these temperature characteristics. Short-wavelength oscillation at 630-nm-band wavelength was achieved for transverse-mode stabilized InGaAlP lasers.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.89966</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1476-1482 |
| issn | 0018-9197 1558-1713 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Diode lasers Exact sciences and technology Fundamental areas of phenomenology (including applications) Information processing Laser stability Lasers Leakage current Light sources Optical materials Optics Photonic band gap Physics Power generation Power lasers Semiconductor lasers laser diodes Temperature |
| title | Short-wavelength InGaAlP visible laser diodes |
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