Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor
TiN/GaN Schottky barrier diodes with different anode diameters are fabricated to investigate the temperature sensing mechanism. All the circular diodes present good stability over a temperature range of 25 °C-200 °C. In the fully turn-on region, the sensitivity increases with the increasing diameter...
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| Veröffentlicht in: | IEEE transactions on electron devices 2020-03, Vol.67 (3), p.1171-1175 |
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| container_title | IEEE transactions on electron devices |
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| creator | Li, Xiaobo Pu, Taofei Li, Xianjie Li, Liuan Ao, Jin-Ping |
| description | TiN/GaN Schottky barrier diodes with different anode diameters are fabricated to investigate the temperature sensing mechanism. All the circular diodes present good stability over a temperature range of 25 °C-200 °C. In the fully turn-on region, the sensitivity increases with the increasing diameter. Furthermore, the highest sensitivity of 1.22 mV/K is obtained for a 300-μm-diameter device at current of 20 mA, taking into account the series resistance. In the subthreshold region, the forward current (I D ) density determines the sensor sensitivity, in which a larger current density corresponds to a lower sensitivity. In addition, the strong dependence of the leakage current on the temperature indicates that the linearity of ln (I r ) versus temperature can be also used for sensor applications. |
| doi_str_mv | 10.1109/TED.2020.2968358 |
| format | Article |
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All the circular diodes present good stability over a temperature range of 25 °C-200 °C. In the fully turn-on region, the sensitivity increases with the increasing diameter. Furthermore, the highest sensitivity of 1.22 mV/K is obtained for a 300-μm-diameter device at current of 20 mA, taking into account the series resistance. In the subthreshold region, the forward current (I D ) density determines the sensor sensitivity, in which a larger current density corresponds to a lower sensitivity. 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All the circular diodes present good stability over a temperature range of 25 °C-200 °C. In the fully turn-on region, the sensitivity increases with the increasing diameter. Furthermore, the highest sensitivity of 1.22 mV/K is obtained for a 300-μm-diameter device at current of 20 mA, taking into account the series resistance. In the subthreshold region, the forward current (I D ) density determines the sensor sensitivity, in which a larger current density corresponds to a lower sensitivity. In addition, the strong dependence of the leakage current on the temperature indicates that the linearity of ln (I r ) versus temperature can be also used for sensor applications.</description><subject>Anodes</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>GaN</subject><subject>Leakage current</subject><subject>Linearity</subject><subject>reactive sputtering</subject><subject>Schottky barrier diode (SBD)</subject><subject>Schottky diodes</subject><subject>Sensitivity</subject><subject>Sensors</subject><subject>Temperature measurement</subject><subject>temperature sensor</subject><subject>Temperature sensors</subject><subject>TiN</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQQIMoWKt3wUvA87b53GyO_bIKpR66nkN2d5amtpuaTZX-e7e2eBoG3puBh9AjJQNKiR7ms-mAEUYGTKcZl9kV6lEpVaJTkV6jHiE0SzTP-C26a9tNt6ZCsB5aT3wIsLXR-QaPIf4ANHjU-ArwKIDFtqnwCprWRfft4hHXPuC4Bpy75XBul3hVrn2Mn0c8tiE4CHjqTm4Ouz0EGw8B_nQf7tFNbbctPFxmH328zPLJa7J4n79NRoukFETERINQEmgKdVkUosgklapinHChrVLEFlpZQakqmNWkrqQqSCEFkWkhOK2F5n30fL67D_7rAG00G38ITffSMJ5mNGOMiI4iZ6oMvm0D1GYf3M6Go6HEnHqarqc59TSXnp3ydFYcAPzjmdZSacF_AU11cHU</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>Li, Xiaobo</creator><creator>Pu, Taofei</creator><creator>Li, Xianjie</creator><creator>Li, Liuan</creator><creator>Ao, Jin-Ping</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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All the circular diodes present good stability over a temperature range of 25 °C-200 °C. In the fully turn-on region, the sensitivity increases with the increasing diameter. Furthermore, the highest sensitivity of 1.22 mV/K is obtained for a 300-μm-diameter device at current of 20 mA, taking into account the series resistance. In the subthreshold region, the forward current (I D ) density determines the sensor sensitivity, in which a larger current density corresponds to a lower sensitivity. In addition, the strong dependence of the leakage current on the temperature indicates that the linearity of ln (I r ) versus temperature can be also used for sensor applications.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2020.2968358</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-3407-6404</orcidid><orcidid>https://orcid.org/0000-0003-1685-0168</orcidid><orcidid>https://orcid.org/0000-0002-0549-3508</orcidid><orcidid>https://orcid.org/0000-0002-8964-7518</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Anodes Gallium nitride Gallium nitrides GaN Leakage current Linearity reactive sputtering Schottky barrier diode (SBD) Schottky diodes Sensitivity Sensors Temperature measurement temperature sensor Temperature sensors TiN |
| title | Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor |
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