An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application

In this article, an improved silicon-controlled rectifier (SCR) for low-voltage (LV) electrostatic discharge (ESD) applications has been presented. By employing an N+/P-ESD diode and optimizing the SCR layout, both the triggering and current-discharging paths of the new SCR become much shorter than...

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Veröffentlicht in:	IEEE transactions on electron devices 2020-02, Vol.67 (2), p.576-581
Hauptverfasser:	Du, Feibo, Hou, Fei, Song, Wenqiang, Chen, Long, Nie, Yanlin, Qing, Yihong, Xu, Yichen, Liu, Jizhi, Liu, Zhiwei, Liou, Juin J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charged-device model (CDM) Clamps Electric potential electrostatic discharge (ESD) Electrostatic discharges Layout Leakage currents Optimization overshoot voltage Robustness Silicon Silicon controlled rectifiers silicon-controlled rectifier (SCR) Static electricity Temperature measurement Transient analysis Voltage Voltage measurement
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