An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application
In this article, an improved silicon-controlled rectifier (SCR) for low-voltage (LV) electrostatic discharge (ESD) applications has been presented. By employing an N+/P-ESD diode and optimizing the SCR layout, both the triggering and current-discharging paths of the new SCR become much shorter than...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2020-02, Vol.67 (2), p.576-581 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 581 |
|---|---|
| container_issue | 2 |
| container_start_page | 576 |
| container_title | IEEE transactions on electron devices |
| container_volume | 67 |
| creator | Du, Feibo Hou, Fei Song, Wenqiang Chen, Long Nie, Yanlin Qing, Yihong Xu, Yichen Liu, Jizhi Liu, Zhiwei Liou, Juin J. |
| description | In this article, an improved silicon-controlled rectifier (SCR) for low-voltage (LV) electrostatic discharge (ESD) applications has been presented. By employing an N+/P-ESD diode and optimizing the SCR layout, both the triggering and current-discharging paths of the new SCR become much shorter than the prior arts, thus generating better clamping ability, faster turn-on speed, and lower overshoot voltage. As a result, the human body model (HBM) robustness increases by 19%, 46%, and 267% for the proposed device with one, two, and three stacking units, respectively, and the charged-device model (CDM) robustness and turn-on speed of the improved device increase by 80% and 27%, respectively, over its conventional counterpart. Furthermore, the contradiction between quasi-static triggering characteristics and transient overshoot voltage frequent in current-assisted triggering of ESD devices has been investigated, where the common method to optimize the trigger voltage by increasing the resistance of triggering path will deteriorate the overshoot characteristics hugely. To make the ESD devices satisfy the emerging higher CDM protection requirement, a tradeoff between the quasi-static trigger voltage and the transient overshoot voltage should be made elaborately. |
| doi_str_mv | 10.1109/TED.2019.2961124 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_8954932</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8954932</ieee_id><sourcerecordid>2349117082</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-ce9d544cadaa485b001a5317c9213b4388be06326110da105954ef609d0331283</originalsourceid><addsrcrecordid>eNo9kM1LAzEQxYMoWKt3wUvAix5SM_nYJseyrVooCm31GtLdrKRsN2t2q_jfm1LxNMzw3sybH0LXQEcAVD-sZ9MRo6BHTGcATJygAUg5JjoT2SkaUAqKaK74Obroum1qMyHYAL1MGjzftTF8uRKvfO2L0JA8NH0MdZ1GS1f0vvIu4rtVvrzHVYh4Eb7Je6h7--HwbDXFk7ZNPtv70Fyis8rWnbv6q0P09jhb589k8fo0zycLUjANPSmcLqUQhS2tFUpuUhwrOYwLzYBvBFdq42jGWfqElhao1FK4KqO6pJwDU3yIbo97U_LPvet6sw372KSThnGhAcZUsaSiR1URQ9dFV5k2-p2NPwaoOVAziZo5UDN_1JLl5mjxzrl_uUr3NWf8F0fLZYE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2349117082</pqid></control><display><type>article</type><title>An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application</title><source>IEEE/IET Electronic Library</source><creator>Du, Feibo ; Hou, Fei ; Song, Wenqiang ; Chen, Long ; Nie, Yanlin ; Qing, Yihong ; Xu, Yichen ; Liu, Jizhi ; Liu, Zhiwei ; Liou, Juin J.</creator><creatorcontrib>Du, Feibo ; Hou, Fei ; Song, Wenqiang ; Chen, Long ; Nie, Yanlin ; Qing, Yihong ; Xu, Yichen ; Liu, Jizhi ; Liu, Zhiwei ; Liou, Juin J.</creatorcontrib><description>In this article, an improved silicon-controlled rectifier (SCR) for low-voltage (LV) electrostatic discharge (ESD) applications has been presented. By employing an N+/P-ESD diode and optimizing the SCR layout, both the triggering and current-discharging paths of the new SCR become much shorter than the prior arts, thus generating better clamping ability, faster turn-on speed, and lower overshoot voltage. As a result, the human body model (HBM) robustness increases by 19%, 46%, and 267% for the proposed device with one, two, and three stacking units, respectively, and the charged-device model (CDM) robustness and turn-on speed of the improved device increase by 80% and 27%, respectively, over its conventional counterpart. Furthermore, the contradiction between quasi-static triggering characteristics and transient overshoot voltage frequent in current-assisted triggering of ESD devices has been investigated, where the common method to optimize the trigger voltage by increasing the resistance of triggering path will deteriorate the overshoot characteristics hugely. To make the ESD devices satisfy the emerging higher CDM protection requirement, a tradeoff between the quasi-static trigger voltage and the transient overshoot voltage should be made elaborately.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2019.2961124</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Charged-device model (CDM) ; Clamps ; Electric potential ; electrostatic discharge (ESD) ; Electrostatic discharges ; Layout ; Leakage currents ; Optimization ; overshoot voltage ; Robustness ; Silicon ; Silicon controlled rectifiers ; silicon-controlled rectifier (SCR) ; Static electricity ; Temperature measurement ; Transient analysis ; Voltage ; Voltage measurement</subject><ispartof>IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.576-581</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-ce9d544cadaa485b001a5317c9213b4388be06326110da105954ef609d0331283</citedby><cites>FETCH-LOGICAL-c291t-ce9d544cadaa485b001a5317c9213b4388be06326110da105954ef609d0331283</cites><orcidid>0000-0001-6313-3626 ; 0000-0003-0805-5930 ; 0000-0002-5815-5078 ; 0000-0001-5763-4037 ; 0000-0001-9901-1719 ; 0000-0001-8622-2429</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8954932$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27915,27916,54749</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8954932$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Du, Feibo</creatorcontrib><creatorcontrib>Hou, Fei</creatorcontrib><creatorcontrib>Song, Wenqiang</creatorcontrib><creatorcontrib>Chen, Long</creatorcontrib><creatorcontrib>Nie, Yanlin</creatorcontrib><creatorcontrib>Qing, Yihong</creatorcontrib><creatorcontrib>Xu, Yichen</creatorcontrib><creatorcontrib>Liu, Jizhi</creatorcontrib><creatorcontrib>Liu, Zhiwei</creatorcontrib><creatorcontrib>Liou, Juin J.</creatorcontrib><title>An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this article, an improved silicon-controlled rectifier (SCR) for low-voltage (LV) electrostatic discharge (ESD) applications has been presented. By employing an N+/P-ESD diode and optimizing the SCR layout, both the triggering and current-discharging paths of the new SCR become much shorter than the prior arts, thus generating better clamping ability, faster turn-on speed, and lower overshoot voltage. As a result, the human body model (HBM) robustness increases by 19%, 46%, and 267% for the proposed device with one, two, and three stacking units, respectively, and the charged-device model (CDM) robustness and turn-on speed of the improved device increase by 80% and 27%, respectively, over its conventional counterpart. Furthermore, the contradiction between quasi-static triggering characteristics and transient overshoot voltage frequent in current-assisted triggering of ESD devices has been investigated, where the common method to optimize the trigger voltage by increasing the resistance of triggering path will deteriorate the overshoot characteristics hugely. To make the ESD devices satisfy the emerging higher CDM protection requirement, a tradeoff between the quasi-static trigger voltage and the transient overshoot voltage should be made elaborately.</description><subject>Charged-device model (CDM)</subject><subject>Clamps</subject><subject>Electric potential</subject><subject>electrostatic discharge (ESD)</subject><subject>Electrostatic discharges</subject><subject>Layout</subject><subject>Leakage currents</subject><subject>Optimization</subject><subject>overshoot voltage</subject><subject>Robustness</subject><subject>Silicon</subject><subject>Silicon controlled rectifiers</subject><subject>silicon-controlled rectifier (SCR)</subject><subject>Static electricity</subject><subject>Temperature measurement</subject><subject>Transient analysis</subject><subject>Voltage</subject><subject>Voltage measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1LAzEQxYMoWKt3wUvAix5SM_nYJseyrVooCm31GtLdrKRsN2t2q_jfm1LxNMzw3sybH0LXQEcAVD-sZ9MRo6BHTGcATJygAUg5JjoT2SkaUAqKaK74Obroum1qMyHYAL1MGjzftTF8uRKvfO2L0JA8NH0MdZ1GS1f0vvIu4rtVvrzHVYh4Eb7Je6h7--HwbDXFk7ZNPtv70Fyis8rWnbv6q0P09jhb589k8fo0zycLUjANPSmcLqUQhS2tFUpuUhwrOYwLzYBvBFdq42jGWfqElhao1FK4KqO6pJwDU3yIbo97U_LPvet6sw372KSThnGhAcZUsaSiR1URQ9dFV5k2-p2NPwaoOVAziZo5UDN_1JLl5mjxzrl_uUr3NWf8F0fLZYE</recordid><startdate>20200201</startdate><enddate>20200201</enddate><creator>Du, Feibo</creator><creator>Hou, Fei</creator><creator>Song, Wenqiang</creator><creator>Chen, Long</creator><creator>Nie, Yanlin</creator><creator>Qing, Yihong</creator><creator>Xu, Yichen</creator><creator>Liu, Jizhi</creator><creator>Liu, Zhiwei</creator><creator>Liou, Juin J.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6313-3626</orcidid><orcidid>https://orcid.org/0000-0003-0805-5930</orcidid><orcidid>https://orcid.org/0000-0002-5815-5078</orcidid><orcidid>https://orcid.org/0000-0001-5763-4037</orcidid><orcidid>https://orcid.org/0000-0001-9901-1719</orcidid><orcidid>https://orcid.org/0000-0001-8622-2429</orcidid></search><sort><creationdate>20200201</creationdate><title>An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application</title><author>Du, Feibo ; Hou, Fei ; Song, Wenqiang ; Chen, Long ; Nie, Yanlin ; Qing, Yihong ; Xu, Yichen ; Liu, Jizhi ; Liu, Zhiwei ; Liou, Juin J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-ce9d544cadaa485b001a5317c9213b4388be06326110da105954ef609d0331283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Charged-device model (CDM)</topic><topic>Clamps</topic><topic>Electric potential</topic><topic>electrostatic discharge (ESD)</topic><topic>Electrostatic discharges</topic><topic>Layout</topic><topic>Leakage currents</topic><topic>Optimization</topic><topic>overshoot voltage</topic><topic>Robustness</topic><topic>Silicon</topic><topic>Silicon controlled rectifiers</topic><topic>silicon-controlled rectifier (SCR)</topic><topic>Static electricity</topic><topic>Temperature measurement</topic><topic>Transient analysis</topic><topic>Voltage</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Du, Feibo</creatorcontrib><creatorcontrib>Hou, Fei</creatorcontrib><creatorcontrib>Song, Wenqiang</creatorcontrib><creatorcontrib>Chen, Long</creatorcontrib><creatorcontrib>Nie, Yanlin</creatorcontrib><creatorcontrib>Qing, Yihong</creatorcontrib><creatorcontrib>Xu, Yichen</creatorcontrib><creatorcontrib>Liu, Jizhi</creatorcontrib><creatorcontrib>Liu, Zhiwei</creatorcontrib><creatorcontrib>Liou, Juin J.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) Online</collection><collection>IEEE/IET Electronic Library</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Du, Feibo</au><au>Hou, Fei</au><au>Song, Wenqiang</au><au>Chen, Long</au><au>Nie, Yanlin</au><au>Qing, Yihong</au><au>Xu, Yichen</au><au>Liu, Jizhi</au><au>Liu, Zhiwei</au><au>Liou, Juin J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2020-02-01</date><risdate>2020</risdate><volume>67</volume><issue>2</issue><spage>576</spage><epage>581</epage><pages>576-581</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this article, an improved silicon-controlled rectifier (SCR) for low-voltage (LV) electrostatic discharge (ESD) applications has been presented. By employing an N+/P-ESD diode and optimizing the SCR layout, both the triggering and current-discharging paths of the new SCR become much shorter than the prior arts, thus generating better clamping ability, faster turn-on speed, and lower overshoot voltage. As a result, the human body model (HBM) robustness increases by 19%, 46%, and 267% for the proposed device with one, two, and three stacking units, respectively, and the charged-device model (CDM) robustness and turn-on speed of the improved device increase by 80% and 27%, respectively, over its conventional counterpart. Furthermore, the contradiction between quasi-static triggering characteristics and transient overshoot voltage frequent in current-assisted triggering of ESD devices has been investigated, where the common method to optimize the trigger voltage by increasing the resistance of triggering path will deteriorate the overshoot characteristics hugely. To make the ESD devices satisfy the emerging higher CDM protection requirement, a tradeoff between the quasi-static trigger voltage and the transient overshoot voltage should be made elaborately.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2019.2961124</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-6313-3626</orcidid><orcidid>https://orcid.org/0000-0003-0805-5930</orcidid><orcidid>https://orcid.org/0000-0002-5815-5078</orcidid><orcidid>https://orcid.org/0000-0001-5763-4037</orcidid><orcidid>https://orcid.org/0000-0001-9901-1719</orcidid><orcidid>https://orcid.org/0000-0001-8622-2429</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.576-581 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_8954932 |
| source | IEEE/IET Electronic Library |
| subjects | Charged-device model (CDM) Clamps Electric potential electrostatic discharge (ESD) Electrostatic discharges Layout Leakage currents Optimization overshoot voltage Robustness Silicon Silicon controlled rectifiers silicon-controlled rectifier (SCR) Static electricity Temperature measurement Transient analysis Voltage Voltage measurement |
| title | An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T17%3A55%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=An%20Improved%20Silicon-Controlled%20Rectifier%20(SCR)%20for%20Low-Voltage%20ESD%20Application&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Du,%20Feibo&rft.date=2020-02-01&rft.volume=67&rft.issue=2&rft.spage=576&rft.epage=581&rft.pages=576-581&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2019.2961124&rft_dat=%3Cproquest_RIE%3E2349117082%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2349117082&rft_id=info:pmid/&rft_ieee_id=8954932&rfr_iscdi=true |