3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices. In this work, a 3D electrode structure engineering method is proposed. The geometric parameters defined as electro...

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Veröffentlicht in:	IEEE access 2020, Vol.8, p.4924-4934
Hauptverfasser:	Sun, Jianxun, Li, Yuan Bo, Ye, Yiyang, Zhang, Jun, Chong, Gang Yih, Tan, Juan Boon, Liu, Zhen, Chen, Tupei
Format:	Artikel
Sprache:	eng
Schlagworte:	Design optimization Electric fields Electrode structure engineering Electrodes Memory devices Random access memory Reliability resistive switching uniformity RRAM device reliability Switching Wedges
Online-Zugang:	Volltext
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