A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region

A novel Reverse Conduction Insulated Gate Bipolar Transistor (RC-IGBT) with Lateral Free-Wheeling Diode (FWD) integrated in the Termination is proposed and investigated by simulation, named LDT-RC-IGBT. Firstly, the Equi-Potential Ring (EPR) of the termination acts as an anode and the N-Stopper/N-Co...

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Veröffentlicht in:	IEEE access 2019, Vol.7, p.183589-183595
Hauptverfasser:	Chen, Weizhong, Huang, Yao, Li, Shun, Huang, Yi, Han, Zhengsheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodes breakdown voltage Cathodes Charge carrier processes Conduction Doping Electric breakdown Energy dissipation Insulated gate bipolar transistors Logic gates RC-IGBT Semiconductor devices snapback turn-off Voltage drop
Online-Zugang:	Volltext
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