Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs

Variability of the solar energetic particle environment is investigated for single-event burnout (SEB) reliability of silicon carbide power metal-oxide-semiconductor field-effect transistors. A probabilistic assessment of failure evaluates the benefits of derating voltage, shielding, and mission len...

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Veröffentlicht in:	IEEE transactions on nuclear science 2020-01, Vol.67 (1), p.353-357
Hauptverfasser:	Austin, Rebekah A., Sierawski, Brian D., Reed, Robert A., Schrimpf, Ronald D., Galloway, Kenneth F., Ball, Dennis R., Witulski, Arthur F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Burnout Electric potential Energetic particles Energy transfer Environments Field effect transistors Fluence Heavy-ion Ions Linear energy transfer (LET) Mathematical analysis MOSFET MOSFETs Nuclear Physics power MOSFETs probabilistic risk assessment Probability Radiation radiation hardness assurance (RHA) methodology Reliability Reliability analysis reliability estimation Semiconductor devices Silicon Silicon carbide Solar power Solar radiation shielding Statistical analysis Threshold voltage Voltage
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