Low dark current GaN avalanche photodiodes
We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occ...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2000-12, Vol.36 (12), p.1389-1391 |
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| container_title | IEEE journal of quantum electronics |
| container_volume | 36 |
| creator | Yang, B. Li, T. Heng, K. Collins, C. Wang, S. Carrano, J.C. Dupuis, R.D. Campbell, J.C. Schurman, M.J. Ferguson, I.T. |
| description | We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm. Near avalanche breakdown, the dark current of a 30-/spl mu/m diameter device is less than 100 pA. The breakdown shows a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown. |
| doi_str_mv | 10.1109/3.892557 |
| format | Article |
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Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm. Near avalanche breakdown, the dark current of a 30-/spl mu/m diameter device is less than 100 pA. The breakdown shows a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.892557</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Avalanche breakdown ; Avalanche photodiodes ; Avalanches ; Breakdown ; Chemical vapor deposition ; Dark current ; Electric breakdown ; Electric potential ; Electronics ; Exact sciences and technology ; Gain ; Gallium nitride ; Gallium nitrides ; Optoelectronic devices ; Photoconductivity ; Photodiodes ; Plasma measurements ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm. Near avalanche breakdown, the dark current of a 30-/spl mu/m diameter device is less than 100 pA. The breakdown shows a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown.</description><subject>Applied sciences</subject><subject>Avalanche breakdown</subject><subject>Avalanche photodiodes</subject><subject>Avalanches</subject><subject>Breakdown</subject><subject>Chemical vapor deposition</subject><subject>Dark current</subject><subject>Electric breakdown</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Optoelectronic devices</subject><subject>Photoconductivity</subject><subject>Photodiodes</subject><subject>Plasma measurements</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Substrates</subject><subject>Voltage</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqF0U1LwzAYB_AgCs4pePZUFFSEzry_HGXoFIZe9BzSJGWddZlJq_jtjXQoeNBTeMiPP88LAIcIThCC6pJMpMKMiS0wQozJEglEtsEIQiRLhZTYBXspLXNJqYQjcDEP74Uz8bmwfYx-1RUzc1-YN9OalV34Yr0IXXBNcD7tg53atMkfbN4xeLq5fpzelvOH2d30al5aokhXUqtoZSW2mDsiOK8EZt5awrn0jinuZWUFx1JRRVmNFXeeSVcJqirFCEZkDM6G3HUMr71PnX5pkvVt7siHPmmFKKcICZ7l6Z8SS0Iphuh_KBgnVOAMj3_BZejjKo-rpWSQUiJJRucDsjGkFH2t17F5MfFDI6i_jqCJHo6Q6ckmzyRr2jrmrTbp20vB8zBZHQ2q8d7_fA4Rn8XKijE</recordid><startdate>20001201</startdate><enddate>20001201</enddate><creator>Yang, B.</creator><creator>Li, T.</creator><creator>Heng, K.</creator><creator>Collins, C.</creator><creator>Wang, S.</creator><creator>Carrano, J.C.</creator><creator>Dupuis, R.D.</creator><creator>Campbell, J.C.</creator><creator>Schurman, M.J.</creator><creator>Ferguson, I.T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Substrates</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, B.</creatorcontrib><creatorcontrib>Li, T.</creatorcontrib><creatorcontrib>Heng, K.</creatorcontrib><creatorcontrib>Collins, C.</creatorcontrib><creatorcontrib>Wang, S.</creatorcontrib><creatorcontrib>Carrano, J.C.</creatorcontrib><creatorcontrib>Dupuis, R.D.</creatorcontrib><creatorcontrib>Campbell, J.C.</creatorcontrib><creatorcontrib>Schurman, M.J.</creatorcontrib><creatorcontrib>Ferguson, I.T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yang, B.</au><au>Li, T.</au><au>Heng, K.</au><au>Collins, C.</au><au>Wang, S.</au><au>Carrano, J.C.</au><au>Dupuis, R.D.</au><au>Campbell, J.C.</au><au>Schurman, M.J.</au><au>Ferguson, I.T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low dark current GaN avalanche photodiodes</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2000-12-01</date><risdate>2000</risdate><volume>36</volume><issue>12</issue><spage>1389</spage><epage>1391</epage><pages>1389-1391</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm. Near avalanche breakdown, the dark current of a 30-/spl mu/m diameter device is less than 100 pA. The breakdown shows a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/3.892557</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Avalanche breakdown Avalanche photodiodes Avalanches Breakdown Chemical vapor deposition Dark current Electric breakdown Electric potential Electronics Exact sciences and technology Gain Gallium nitride Gallium nitrides Optoelectronic devices Photoconductivity Photodiodes Plasma measurements Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Voltage |
| title | Low dark current GaN avalanche photodiodes |
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