Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry

Study of the microstructure of IC interconnect metallisations using analytical transmission electron microscopy and secondary ion mass spectrometry

The general goal of this work is to get a better insight in the different microstructural processes taking place in blanket AI(Si)(Cu) metallisations under variable conditions. Using analytical transmission electron microscopy and secondary ion mass spectrometry stable /spl theta/-CuAl/sub 2/ precip...

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Hauptverfasser: Cosemans, P., D'Olieslaeger, M., de Ceuninck, W., de Schepper, L., Stals, L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Artificial intelligence
Electromigration
Failure analysis
Grain size
Heating
Inorganic materials
Mass spectroscopy
Microstructure
Temperature
Transmission electron microscopy
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Beschreibung
Zusammenfassung:The general goal of this work is to get a better insight in the different microstructural processes taking place in blanket AI(Si)(Cu) metallisations under variable conditions. Using analytical transmission electron microscopy and secondary ion mass spectrometry stable /spl theta/-CuAl/sub 2/ precipitates are found distributed inhomogeneously in the z-direction of the metallisation with a peak near the substrate side of the metallisation. Additional heating creates larger /spl theta/-CuAl/sub 2/, precipitates distributed inhomogeneously in the z-direction with a peak near the surface of the metallisation as well as in the vicinity of the substrate.
DOI:10.1109/ESREF.1996.888195