Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors
For the first time, we show an enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors. By grounding the emitter with a substrate contact to a low-ohmic substrate, the emitter bondwire is effectively short-circuited. At maximum outpu...
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| creator | Magnee, P.H.C. Van Rijs, F. Dekker, R. Hartskeerl, D.M.H. Kemmeren, A.L.A.M. Koster, R. Huizing, H.G.A. |
| description | For the first time, we show an enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors. By grounding the emitter with a substrate contact to a low-ohmic substrate, the emitter bondwire is effectively short-circuited. At maximum output power, 0.5 W with a power added efficiency >60%, an increase in power gain of 2 dB, up to 14.5 dB, is observed. For 0.2 W output power, an increase of 5 dB, up to 19 dB, is observed. |
| doi_str_mv | 10.1109/BIPOL.2000.886204 |
| format | Conference Proceeding |
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By grounding the emitter with a substrate contact to a low-ohmic substrate, the emitter bondwire is effectively short-circuited. At maximum output power, 0.5 W with a power added efficiency >60%, an increase in power gain of 2 dB, up to 14.5 dB, is observed. For 0.2 W output power, an increase of 5 dB, up to 19 dB, is observed.</description><identifier>ISSN: 1088-9299</identifier><identifier>ISBN: 9780780363847</identifier><identifier>ISBN: 0780363841</identifier><identifier>EISSN: 2378-590X</identifier><identifier>DOI: 10.1109/BIPOL.2000.886204</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bipolar transistors ; Bonding ; Heat transfer ; Inductance ; Plugs ; Power generation ; Power transistors ; Radio frequency ; Substrates ; Thermal resistance</subject><ispartof>Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. 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For 0.2 W output power, an increase of 5 dB, up to 19 dB, is observed.</description><subject>Bipolar transistors</subject><subject>Bonding</subject><subject>Heat transfer</subject><subject>Inductance</subject><subject>Plugs</subject><subject>Power generation</subject><subject>Power transistors</subject><subject>Radio frequency</subject><subject>Substrates</subject><subject>Thermal resistance</subject><issn>1088-9299</issn><issn>2378-590X</issn><isbn>9780780363847</isbn><isbn>0780363841</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9kN9KwzAYxYN_wDn3AHqVF-j8knRtcqlj08FgIgrejaT52kXatKQZY3t6KxPhwO_A4ZyLQ8g9gyljoB6fV2-b9ZQDwFTKjEN6QUZc5DKZKfi6JBOVSxgkMiHT_IqMGEiZKK7UDbnt-28ADjyXI3Ja-J32BVr6vqRde8BAK-08NUeKtWuc19H5isYdUmxcjENuWm8PLiB13u6L-Nse7H_c1fuKVqHdezusNgPjQOO6ttaBxqB97_rYhv6OXJe67nHyxzH5XC4-5q_JevOymj-tE8cgjYlOZ0yxMrecZTZDoy2yslSmVGymrSoQpUmtkUKVHEomleap0iI3DHXBBYoxeTjvOkTcdsE1Ohy359fEDysiYvA</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Magnee, P.H.C.</creator><creator>Van Rijs, F.</creator><creator>Dekker, R.</creator><creator>Hartskeerl, D.M.H.</creator><creator>Kemmeren, A.L.A.M.</creator><creator>Koster, R.</creator><creator>Huizing, H.G.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors</title><author>Magnee, P.H.C. ; Van Rijs, F. ; Dekker, R. ; Hartskeerl, D.M.H. ; Kemmeren, A.L.A.M. ; Koster, R. ; Huizing, H.G.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-a45191f7d216d6ebade1ff9bf915ad9cee8b4db839f20f189a249a37b1eac23e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Bipolar transistors</topic><topic>Bonding</topic><topic>Heat transfer</topic><topic>Inductance</topic><topic>Plugs</topic><topic>Power generation</topic><topic>Power transistors</topic><topic>Radio frequency</topic><topic>Substrates</topic><topic>Thermal resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Magnee, P.H.C.</creatorcontrib><creatorcontrib>Van Rijs, F.</creatorcontrib><creatorcontrib>Dekker, R.</creatorcontrib><creatorcontrib>Hartskeerl, D.M.H.</creatorcontrib><creatorcontrib>Kemmeren, A.L.A.M.</creatorcontrib><creatorcontrib>Koster, R.</creatorcontrib><creatorcontrib>Huizing, H.G.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Magnee, P.H.C.</au><au>Van Rijs, F.</au><au>Dekker, R.</au><au>Hartskeerl, D.M.H.</au><au>Kemmeren, A.L.A.M.</au><au>Koster, R.</au><au>Huizing, H.G.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors</atitle><btitle>Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124)</btitle><stitle>BIPOL</stitle><date>2000</date><risdate>2000</risdate><spage>199</spage><epage>202</epage><pages>199-202</pages><issn>1088-9299</issn><eissn>2378-590X</eissn><isbn>9780780363847</isbn><isbn>0780363841</isbn><abstract>For the first time, we show an enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors. By grounding the emitter with a substrate contact to a low-ohmic substrate, the emitter bondwire is effectively short-circuited. At maximum output power, 0.5 W with a power added efficiency >60%, an increase in power gain of 2 dB, up to 14.5 dB, is observed. For 0.2 W output power, an increase of 5 dB, up to 19 dB, is observed.</abstract><pub>IEEE</pub><doi>10.1109/BIPOL.2000.886204</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1088-9299 |
| ispartof | Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2000, p.199-202 |
| issn | 1088-9299 2378-590X |
| language | eng |
| recordid | cdi_ieee_primary_886204 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bipolar transistors Bonding Heat transfer Inductance Plugs Power generation Power transistors Radio frequency Substrates Thermal resistance |
| title | Enhanced RF power gain by eliminating the emitter bondwire inductance in emitter plug grounded mounted bipolar transistors |
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