Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
In this letter, the endurance property of Hf 0.5 Zr 0.5 O 2 (HZO) based ferroelectric capacitor has been improved using Ru electrodes. Compared to the widely used TiN/HZO/TiN capacitor, the Ru/HZO/Ru capacitor shows comparable remnant polarization (~.20μC/cm 2 ), lower leakage current (5.67×10 -5 A/...
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| Veröffentlicht in: | IEEE electron device letters 2019-11, Vol.40 (11), p.1744-1747 |
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| container_issue | 11 |
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| container_title | IEEE electron device letters |
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| creator | Cao, Rongrong Liu, Qi Liu, Ming Song, Bing Shang, Dashan Yang, Yang Luo, Qing Wu, Shuyu Li, Yue Wang, Yan Lv, Hangbing |
| description | In this letter, the endurance property of Hf 0.5 Zr 0.5 O 2 (HZO) based ferroelectric capacitor has been improved using Ru electrodes. Compared to the widely used TiN/HZO/TiN capacitor, the Ru/HZO/Ru capacitor shows comparable remnant polarization (~.20μC/cm 2 ), lower leakage current (5.67×10 -5 A/cm 2 ) and higher breakdown electric field (~4 MV/cm) at room temperature. The reduction of the leakage current and the enhancement of the breakdown electric field, which are ascribed to the small number of defects and vacancies in HZO thin films with Ru electrodes, prompt the endurance improvement of HZO-based capacitor from 3 × 10 10 cycles for TiN electrodes at 3 MV/cm to more than 1.2 × 10 11 cycles for Ru electrodes at 3.5 MV/cm. This work provides an effective way to reduce the leakage current and improve the endurance property of HZO-based capacitors. |
| doi_str_mv | 10.1109/LED.2019.2944960 |
| format | Article |
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Compared to the widely used TiN/HZO/TiN capacitor, the Ru/HZO/Ru capacitor shows comparable remnant polarization (~.20μC/cm 2 ), lower leakage current (5.67×10 -5 A/cm 2 ) and higher breakdown electric field (~4 MV/cm) at room temperature. The reduction of the leakage current and the enhancement of the breakdown electric field, which are ascribed to the small number of defects and vacancies in HZO thin films with Ru electrodes, prompt the endurance improvement of HZO-based capacitor from 3 × 10 10 cycles for TiN electrodes at 3 MV/cm to more than 1.2 × 10 11 cycles for Ru electrodes at 3.5 MV/cm. This work provides an effective way to reduce the leakage current and improve the endurance property of HZO-based capacitors.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2019.2944960</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Breakdown ; breakdown field ; Capacitors ; Durability ; Electric breakdown ; Electric fields ; Electrode polarization ; Electrodes ; Endurance ; endurance property ; Ferroelectric materials ; Ferroelectricity ; Hafnium compounds ; Leakage current ; Leakage currents ; Ru/HZO/Ru ; Thin films ; Tin</subject><ispartof>IEEE electron device letters, 2019-11, Vol.40 (11), p.1744-1747</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-cade13a550fa2b29591aba723e3ed0eec233cc424b4e4f0886362be4d1c3d19c3</citedby><cites>FETCH-LOGICAL-c357t-cade13a550fa2b29591aba723e3ed0eec233cc424b4e4f0886362be4d1c3d19c3</cites><orcidid>0000-0003-3573-8390 ; 0000-0002-3419-4400 ; 0000-0003-4727-9224 ; 0000-0002-0937-7547 ; 0000-0002-9084-157X ; 0000-0001-7062-831X ; 0000-0002-9450-7579</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8854297$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8854297$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Cao, Rongrong</creatorcontrib><creatorcontrib>Liu, Qi</creatorcontrib><creatorcontrib>Liu, Ming</creatorcontrib><creatorcontrib>Song, Bing</creatorcontrib><creatorcontrib>Shang, Dashan</creatorcontrib><creatorcontrib>Yang, Yang</creatorcontrib><creatorcontrib>Luo, Qing</creatorcontrib><creatorcontrib>Wu, Shuyu</creatorcontrib><creatorcontrib>Li, Yue</creatorcontrib><creatorcontrib>Wang, Yan</creatorcontrib><creatorcontrib>Lv, Hangbing</creatorcontrib><title>Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this letter, the endurance property of Hf 0.5 Zr 0.5 O 2 (HZO) based ferroelectric capacitor has been improved using Ru electrodes. Compared to the widely used TiN/HZO/TiN capacitor, the Ru/HZO/Ru capacitor shows comparable remnant polarization (~.20μC/cm 2 ), lower leakage current (5.67×10 -5 A/cm 2 ) and higher breakdown electric field (~4 MV/cm) at room temperature. The reduction of the leakage current and the enhancement of the breakdown electric field, which are ascribed to the small number of defects and vacancies in HZO thin films with Ru electrodes, prompt the endurance improvement of HZO-based capacitor from 3 × 10 10 cycles for TiN electrodes at 3 MV/cm to more than 1.2 × 10 11 cycles for Ru electrodes at 3.5 MV/cm. This work provides an effective way to reduce the leakage current and improve the endurance property of HZO-based capacitors.</description><subject>Breakdown</subject><subject>breakdown field</subject><subject>Capacitors</subject><subject>Durability</subject><subject>Electric breakdown</subject><subject>Electric fields</subject><subject>Electrode polarization</subject><subject>Electrodes</subject><subject>Endurance</subject><subject>endurance property</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Hafnium compounds</subject><subject>Leakage current</subject><subject>Leakage currents</subject><subject>Ru/HZO/Ru</subject><subject>Thin films</subject><subject>Tin</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMFLwzAUh4MoOKd3wUvAc2eSl7TNUWfnBoOJuIuXkKav0rE1M2kF_3s7Nzy9w_t-v_f4CLnlbMI50w_L4nkiGNcToaXUKTsjI65UnjCVwjkZsUzyBDhLL8lVjBvGuJSZHJHXxW4f_DfusO2or2nRVn2wrUPatHT-sUqebMSKzjAEj1t0XWgcndq9dU3nA13Hpv2kbz0t_na-wmtyUdttxJvTHJP1rHifzpPl6mUxfVwmDlTWJc5WyMEqxWorSqGV5ra0mQAErBiiEwDOSSFLibJmeZ5CKkqUFXdQce1gTO6PvcP7Xz3Gzmx8H9rhpBHAByUZ5DBQ7Ei54GMMWJt9aHY2_BjOzMGbGbyZgzdz8jZE7o6RBhH_8TxXUugMfgHwIGi0</recordid><startdate>20191101</startdate><enddate>20191101</enddate><creator>Cao, Rongrong</creator><creator>Liu, Qi</creator><creator>Liu, Ming</creator><creator>Song, Bing</creator><creator>Shang, Dashan</creator><creator>Yang, Yang</creator><creator>Luo, Qing</creator><creator>Wu, Shuyu</creator><creator>Li, Yue</creator><creator>Wang, Yan</creator><creator>Lv, Hangbing</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Compared to the widely used TiN/HZO/TiN capacitor, the Ru/HZO/Ru capacitor shows comparable remnant polarization (~.20μC/cm 2 ), lower leakage current (5.67×10 -5 A/cm 2 ) and higher breakdown electric field (~4 MV/cm) at room temperature. The reduction of the leakage current and the enhancement of the breakdown electric field, which are ascribed to the small number of defects and vacancies in HZO thin films with Ru electrodes, prompt the endurance improvement of HZO-based capacitor from 3 × 10 10 cycles for TiN electrodes at 3 MV/cm to more than 1.2 × 10 11 cycles for Ru electrodes at 3.5 MV/cm. 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| subjects | Breakdown breakdown field Capacitors Durability Electric breakdown Electric fields Electrode polarization Electrodes Endurance endurance property Ferroelectric materials Ferroelectricity Hafnium compounds Leakage current Leakage currents Ru/HZO/Ru Thin films Tin |
| title | Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode |
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