Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

The back-channel-etch amorphous InGaZnO (a-IGZO) double-layer thin-film transistor (DL-TFT) consists of an a-IGZO layer with no oxygen flow (NOF) as a top layer and an a-IGZO layer with oxygen flow (OF) as a bottom layer. The DL-TFT demonstrates the field-effect mobility of 19 cm 2 /V-s, which is 1....

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2019-10, Vol.66 (10), p.4188-4192
Hauptverfasser:	Tai, An-Hung, Yen, Chia-Chun, Chen, Tsang-Long, Chou, Cheng-Hsu, Liu, C. W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous InGaZnO (a-IGZO) band alignment Conduction bands double layers Electric potential Etching Fabrication In-Ga-Zn-O Indium gallium zinc oxide Logic gates mobility enhancement Optical variables measurement Photoelectrons Photonic band gap Quantum confinement quantum well Quantum wells Scattering Semiconductor devices Surface roughness Thin film transistors thin-film transistor (TFT) Voltage Work functions
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!