Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling
In this letter, we report on the InAs/InAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength ( \lambda _{\mathbf {c}})~\sim ~15~\mu \text{m} for temperatures ( T ) reached by three-stage thermoelectric (TE) cooling to minimize the detector's volume to reach size, wei...
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| Veröffentlicht in: | IEEE electron device letters 2019-09, Vol.40 (9), p.1396-1398 |
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| container_title | IEEE electron device letters |
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| creator | Michalczewski, Krystian Martyniuk, Piotr Kubiszyn, Lukasz Wu, Chao-Hsin Wu, Yuh-Renn Jurenczyk, Jarek Rogalski, Antoni Piotrowski, Jozef |
| description | In this letter, we report on the InAs/InAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength ( \lambda _{\mathbf {c}})~\sim ~15~\mu \text{m} for temperatures ( T ) reached by three-stage thermoelectric (TE) cooling to minimize the detector's volume to reach size, weight, and power (SWaP) conditions. The presented device reaches detectivity (D *) ~ 10 9 Jones ( \lambda _{\mathrm {c}}\sim ~15~\mu \text{m} ). These results are the first reported on single pixel T2SL InAs/InAsSb photoconductor with \lambda _{\mathrm {c}}\sim ~15~\mu \text{m} where GaAs immersion lens (IL) was implemented and integrated with three-stage Peltier TE cooler. |
| doi_str_mv | 10.1109/LED.2019.2930106 |
| format | Article |
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The presented device reaches detectivity (D *) ~ 10 9 Jones (<inline-formula> <tex-math notation="LaTeX">\lambda _{\mathrm {c}}\sim ~15~\mu \text{m} </tex-math></inline-formula>). These results are the first reported on single pixel T2SL InAs/InAsSb photoconductor with <inline-formula> <tex-math notation="LaTeX">\lambda _{\mathrm {c}}\sim ~15~\mu \text{m} </tex-math></inline-formula> where GaAs immersion lens (IL) was implemented and integrated with three-stage Peltier TE cooler.]]></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2019.2930106</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Cut off wavelength ; Detectors ; Gallium arsenide ; InAs/InAsSb T2SL ; IR detectors ; LWIR ; Photoconducting materials ; Photodetectors ; Resistance ; Submerging ; Substrates ; Superlattices ; Thermoelectric cooling ; VLWIR</subject><ispartof>IEEE electron device letters, 2019-09, Vol.40 (9), p.1396-1398</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c221t-819138f7d2a474e2b352902dfbad2d7c3eea8d1b57a84274382063c82d0f96353</citedby><cites>FETCH-LOGICAL-c221t-819138f7d2a474e2b352902dfbad2d7c3eea8d1b57a84274382063c82d0f96353</cites><orcidid>0000-0003-1963-3521 ; 0000-0001-7849-773X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8768066$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8768066$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Michalczewski, Krystian</creatorcontrib><creatorcontrib>Martyniuk, Piotr</creatorcontrib><creatorcontrib>Kubiszyn, Lukasz</creatorcontrib><creatorcontrib>Wu, Chao-Hsin</creatorcontrib><creatorcontrib>Wu, Yuh-Renn</creatorcontrib><creatorcontrib>Jurenczyk, Jarek</creatorcontrib><creatorcontrib>Rogalski, Antoni</creatorcontrib><creatorcontrib>Piotrowski, Jozef</creatorcontrib><title>Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description><![CDATA[In this letter, we report on the InAs/InAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength (<inline-formula> <tex-math notation="LaTeX">\lambda _{\mathbf {c}})~\sim ~15~\mu \text{m} </tex-math></inline-formula> for temperatures ( T ) reached by three-stage thermoelectric (TE) cooling to minimize the detector's volume to reach size, weight, and power (SWaP) conditions. The presented device reaches detectivity (D *) ~ 10 9 Jones (<inline-formula> <tex-math notation="LaTeX">\lambda _{\mathrm {c}}\sim ~15~\mu \text{m} </tex-math></inline-formula>). These results are the first reported on single pixel T2SL InAs/InAsSb photoconductor with <inline-formula> <tex-math notation="LaTeX">\lambda _{\mathrm {c}}\sim ~15~\mu \text{m} </tex-math></inline-formula> where GaAs immersion lens (IL) was implemented and integrated with three-stage Peltier TE cooler.]]></description><subject>Cut off wavelength</subject><subject>Detectors</subject><subject>Gallium arsenide</subject><subject>InAs/InAsSb T2SL</subject><subject>IR detectors</subject><subject>LWIR</subject><subject>Photoconducting materials</subject><subject>Photodetectors</subject><subject>Resistance</subject><subject>Submerging</subject><subject>Substrates</subject><subject>Superlattices</subject><subject>Thermoelectric cooling</subject><subject>VLWIR</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9UEtLw0AQXkTBWr0LXhY8p91HHptjabUGAhVa9Rg2yaRJSbJxdyv0d_iH3dDiZQbmezEfQo-UzCgl8Tx9Wc0YofGMxZxQEl6hCQ0C4ZEg5NdoQiKfetzdb9GdMQdCqO9H_gT9rqBTvbFa2kb1WFXY1oA_QZ9wqvo9_pI_0EK_tzVO-kpLDSXenQbwkgRvjwPoVlrbFODQhZmPY5vjtVwYnHQdaOPo77WyqgQLhVUab5zGZTlrafGuBt0pF1BY3RR4qVTrkHt0U8nWwMNlT9HH68tu-ealm3WyXKRewRi1nqAx5aKKSibdK8ByHrCYsLLKZcnKqOAAUpQ0DyIpfBb5XDAS8kKwklRxyAM-Rc9n30Gr7yMYmx3UUfcuMmMsikf_kDkWObMKrYzRUGWDbjqpTxkl2Vh95qrPxuqzS_VO8nSWNADwTxdRKEgY8j8Vr4B7</recordid><startdate>20190901</startdate><enddate>20190901</enddate><creator>Michalczewski, Krystian</creator><creator>Martyniuk, Piotr</creator><creator>Kubiszyn, Lukasz</creator><creator>Wu, Chao-Hsin</creator><creator>Wu, Yuh-Renn</creator><creator>Jurenczyk, Jarek</creator><creator>Rogalski, Antoni</creator><creator>Piotrowski, Jozef</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1963-3521</orcidid><orcidid>https://orcid.org/0000-0001-7849-773X</orcidid></search><sort><creationdate>20190901</creationdate><title>Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling</title><author>Michalczewski, Krystian ; Martyniuk, Piotr ; Kubiszyn, Lukasz ; Wu, Chao-Hsin ; Wu, Yuh-Renn ; Jurenczyk, Jarek ; Rogalski, Antoni ; Piotrowski, Jozef</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c221t-819138f7d2a474e2b352902dfbad2d7c3eea8d1b57a84274382063c82d0f96353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Cut off wavelength</topic><topic>Detectors</topic><topic>Gallium arsenide</topic><topic>InAs/InAsSb T2SL</topic><topic>IR detectors</topic><topic>LWIR</topic><topic>Photoconducting materials</topic><topic>Photodetectors</topic><topic>Resistance</topic><topic>Submerging</topic><topic>Substrates</topic><topic>Superlattices</topic><topic>Thermoelectric cooling</topic><topic>VLWIR</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Michalczewski, Krystian</creatorcontrib><creatorcontrib>Martyniuk, Piotr</creatorcontrib><creatorcontrib>Kubiszyn, Lukasz</creatorcontrib><creatorcontrib>Wu, Chao-Hsin</creatorcontrib><creatorcontrib>Wu, Yuh-Renn</creatorcontrib><creatorcontrib>Jurenczyk, Jarek</creatorcontrib><creatorcontrib>Rogalski, Antoni</creatorcontrib><creatorcontrib>Piotrowski, Jozef</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Michalczewski, Krystian</au><au>Martyniuk, Piotr</au><au>Kubiszyn, Lukasz</au><au>Wu, Chao-Hsin</au><au>Wu, Yuh-Renn</au><au>Jurenczyk, Jarek</au><au>Rogalski, Antoni</au><au>Piotrowski, Jozef</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2019-09-01</date><risdate>2019</risdate><volume>40</volume><issue>9</issue><spage>1396</spage><epage>1398</epage><pages>1396-1398</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract><![CDATA[In this letter, we report on the InAs/InAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength (<inline-formula> <tex-math notation="LaTeX">\lambda _{\mathbf {c}})~\sim ~15~\mu \text{m} </tex-math></inline-formula> for temperatures ( T ) reached by three-stage thermoelectric (TE) cooling to minimize the detector's volume to reach size, weight, and power (SWaP) conditions. The presented device reaches detectivity (D *) ~ 10 9 Jones (<inline-formula> <tex-math notation="LaTeX">\lambda _{\mathrm {c}}\sim ~15~\mu \text{m} </tex-math></inline-formula>). These results are the first reported on single pixel T2SL InAs/InAsSb photoconductor with <inline-formula> <tex-math notation="LaTeX">\lambda _{\mathrm {c}}\sim ~15~\mu \text{m} </tex-math></inline-formula> where GaAs immersion lens (IL) was implemented and integrated with three-stage Peltier TE cooler.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2019.2930106</doi><tpages>3</tpages><orcidid>https://orcid.org/0000-0003-1963-3521</orcidid><orcidid>https://orcid.org/0000-0001-7849-773X</orcidid></addata></record> |
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| subjects | Cut off wavelength Detectors Gallium arsenide InAs/InAsSb T2SL IR detectors LWIR Photoconducting materials Photodetectors Resistance Submerging Substrates Superlattices Thermoelectric cooling VLWIR |
| title | Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling |
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