The influence of via hole inductance on millimetre-wave mixer performance
A novel method to eliminate the negative influence of the parasitic inductance of via holes on mixer performance is presented. The via hole inductance is resonated with an open stub for the millimetre-wave frequencies of the circuit. Detailed simulations of a pHEMT GaAs MMIC gate mixer predict a 2 d...
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| creator | Brabetz, T. Fusco, V.F. |
| description | A novel method to eliminate the negative influence of the parasitic inductance of via holes on mixer performance is presented. The via hole inductance is resonated with an open stub for the millimetre-wave frequencies of the circuit. Detailed simulations of a pHEMT GaAs MMIC gate mixer predict a 2 dB higher conversion gain, and 4 dB reduction in LO power requirements for a circuit with resonated via holes in comparison to one with the classic form of via holes. |
| doi_str_mv | 10.1109/HFPSC.2000.874080 |
| format | Conference Proceeding |
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The via hole inductance is resonated with an open stub for the millimetre-wave frequencies of the circuit. Detailed simulations of a pHEMT GaAs MMIC gate mixer predict a 2 dB higher conversion gain, and 4 dB reduction in LO power requirements for a circuit with resonated via holes in comparison to one with the classic form of via holes.</description><identifier>ISBN: 0780365909</identifier><identifier>ISBN: 9780780365902</identifier><identifier>DOI: 10.1109/HFPSC.2000.874080</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit simulation ; Gallium arsenide ; HEMTs ; Inductance ; MMICs ; Parasitic capacitance ; Performance gain ; PHEMTs ; Predictive models ; Transconductance</subject><ispartof>2000 High Frequency Postgraduate Student Colloquium (Cat. 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The via hole inductance is resonated with an open stub for the millimetre-wave frequencies of the circuit. Detailed simulations of a pHEMT GaAs MMIC gate mixer predict a 2 dB higher conversion gain, and 4 dB reduction in LO power requirements for a circuit with resonated via holes in comparison to one with the classic form of via holes.</description><subject>Circuit simulation</subject><subject>Gallium arsenide</subject><subject>HEMTs</subject><subject>Inductance</subject><subject>MMICs</subject><subject>Parasitic capacitance</subject><subject>Performance gain</subject><subject>PHEMTs</subject><subject>Predictive models</subject><subject>Transconductance</subject><isbn>0780365909</isbn><isbn>9780780365902</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj91KAzEUhAMiqLUPoFd5gV1Pfje5lMXaQkHBel2y2RMa2Z-S3VZ9e7etNzPMN4cDQ8gDg5wxsE_LxftHmXMAyE0hwcAVuYPCgNDKgr0h82H4mkpQykzolqw2O6SxC80BO4-0D_QYHd31zYnWBz-6M-5oG5smtjgmzL7dEaf8g4nuMYU-taeje3IdXDPg_N9n5HPxsimX2frtdVU-r7PIQI6ZrrRjTGOBUipWTYpKFLZ2NQclgxZCcChq1JXXxnmJQqO3FXJZB65sJWbk8fI3IuJ2n2Lr0u_2Mlb8Ab2HSyQ</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Brabetz, T.</creator><creator>Fusco, V.F.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>The influence of via hole inductance on millimetre-wave mixer performance</title><author>Brabetz, T. ; Fusco, V.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-6b6a116e7e4451be44e5379dad2054f6333207de6bc68ac4e36ec9be24df259b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Circuit simulation</topic><topic>Gallium arsenide</topic><topic>HEMTs</topic><topic>Inductance</topic><topic>MMICs</topic><topic>Parasitic capacitance</topic><topic>Performance gain</topic><topic>PHEMTs</topic><topic>Predictive models</topic><topic>Transconductance</topic><toplevel>online_resources</toplevel><creatorcontrib>Brabetz, T.</creatorcontrib><creatorcontrib>Fusco, V.F.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brabetz, T.</au><au>Fusco, V.F.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The influence of via hole inductance on millimetre-wave mixer performance</atitle><btitle>2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539)</btitle><stitle>HFPSC</stitle><date>2000</date><risdate>2000</risdate><spage>40</spage><epage>44</epage><pages>40-44</pages><isbn>0780365909</isbn><isbn>9780780365902</isbn><abstract>A novel method to eliminate the negative influence of the parasitic inductance of via holes on mixer performance is presented. The via hole inductance is resonated with an open stub for the millimetre-wave frequencies of the circuit. Detailed simulations of a pHEMT GaAs MMIC gate mixer predict a 2 dB higher conversion gain, and 4 dB reduction in LO power requirements for a circuit with resonated via holes in comparison to one with the classic form of via holes.</abstract><pub>IEEE</pub><doi>10.1109/HFPSC.2000.874080</doi><tpages>5</tpages></addata></record> |
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| identifier | ISBN: 0780365909 |
| ispartof | 2000 High Frequency Postgraduate Student Colloquium (Cat. No.00TH8539), 2000, p.40-44 |
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| language | eng |
| recordid | cdi_ieee_primary_874080 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit simulation Gallium arsenide HEMTs Inductance MMICs Parasitic capacitance Performance gain PHEMTs Predictive models Transconductance |
| title | The influence of via hole inductance on millimetre-wave mixer performance |
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