Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems
Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we describe a possible roadmap to enable CMOS compati...
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| Veröffentlicht in: | IEEE transactions on very large scale integration (VLSI) systems 2019-07, Vol.27 (7), p.1486-1503 |
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| container_title | IEEE transactions on very large scale integration (VLSI) systems |
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| creator | Resta, Giovanni V. Leonhardt, Alessandra Balaji, Yashwanth De Gendt, Stefan Gaillardon, Pierre-Emmanuel De Micheli, Giovanni |
| description | Here, we review the most recent developments in the field of 2-D electronics. We focus first on the synthesis of 2-D materials, discussing the different growth techniques currently available and assessing their strengths and weaknesses. Moreover, we describe a possible roadmap to enable CMOS compatible integration of 2-D materials. We then shift our attention to 2-D devices and circuits and review the state of the art. Among the plethora of device concepts, we look closely at 2-D tunnel FETs (TFETs) and negative-capacitance FETs (NC-FETs) for low-power applications. We also put a particular emphasis on doping-free polarity-controllable systems that use electrostatic doping to eliminate the need for physical or chemical doping. We conclude with an analysis of simulations of scaled devices and discuss the possibilities enabled at circuit level by 2-D electronics. |
| doi_str_mv | 10.1109/TVLSI.2019.2914609 |
| format | Article |
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| ispartof | IEEE transactions on very large scale integration (VLSI) systems, 2019-07, Vol.27 (7), p.1486-1503 |
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| source | IEEE Electronic Library (IEL) |
| subjects | 2-D materials Atomic layer deposition beyond CMOS CMOS CMOS technology Doping doping-free Electronics Graphene growth Integrated circuits integration low power Metals Organic chemistry Polarity polarity control scaling State-of-the-art reviews Substrates transfer transition metal dichalcogenides (TMDCs) Two dimensional materials Very large scale integration |
| title | Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems |
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