Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity
A metal-resistance-aware transmission line model (MRA-TLM) is developed to eliminate the parasitic metal resistance from the extraction of specific contact resistivity \rho _{c} in the metal/semiconductor contact. The proposed MRA-TLM is verified by Synopsys technology computer-aided design (TCAD)...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2019-07, Vol.66 (7), p.3086-3092 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3092 |
|---|---|
| container_issue | 7 |
| container_start_page | 3086 |
| container_title | IEEE transactions on electron devices |
| container_volume | 66 |
| creator | Wu, Ying Xu, Haiwen Gong, Xiao Yeo, Yee-Chia |
| description | A metal-resistance-aware transmission line model (MRA-TLM) is developed to eliminate the parasitic metal resistance from the extraction of specific contact resistivity \rho _{c} in the metal/semiconductor contact. The proposed MRA-TLM is verified by Synopsys technology computer-aided design (TCAD) simulation, and a superior extraction accuracy as compared to the conventional TLM-based method is achieved. The proposed MRA-TLM is experimentally demonstrated in the metal/p + -Ge 0.95 Sn 0.05 (p + -GeSn) contacts. Ultralow \rho _{c} values of {7.5} \times {10}^{-{10}} and {2.1} \times {10}^{-{9}} \,\, \Omega \cdot \text {cm}^{{2}} are extracted by MRA-TLM for Ni/p + -GeSn and Ti/p + -GeSn contacts, respectively, which are in good agreement with {9.5} \times {10}^{-{10}} and {2.6} \times {10}^{-{9}} \,\,\Omega \cdot \text {cm}^{{2}} extracted numerically by the two-layer distributed-resistor-network model (TDM), qualifying the proposed MRA-TLM for the extraction of ultralow \rho _{c} down to sub- 10^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}} regime. In contrast, the \rho _{c} extracted by the conventional TLM-based method is more than three times higher due to the parasitic metal resistance. |
| doi_str_mv | 10.1109/TED.2019.2917930 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_8732594</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>8732594</ieee_id><sourcerecordid>2243277226</sourcerecordid><originalsourceid>FETCH-LOGICAL-c357t-70dc5f109d496e6659420c4c40f15541dc3cf4d21e40d62543f6d2d544800b1a3</originalsourceid><addsrcrecordid>eNo9UEtLAzEYDKJgrd4FLwHPW_Pa7OYotT6gRdH2HGIemLLd1CQ-evOnm9Lq6WP4Zub7ZgA4x2iEMRJX88nNiCAsRkTgRlB0AAa4rptKcMYPwQAh3FaCtvQYnKS0LJAzRgbgZ9L5le9V9qGHwcH8ZuGTiir57DWc2aw6-GyTT1n12kLfw3lUfVr5lLaKqe8tnAVjO-hChJPvHJX-81p0BXXhC76srfau-I1Dn8t-7-g_fd6cgiOnumTP9nMIFreT-fi-mj7ePYyvp5WmdZOrBhlduxLUMMEt57VgBGmmGXIlJsNGU-2YIdgyZDipGXXcEFMz1iL0ihUdgsud7zqG9w-bslyGj9iXk5IQRknTEMILC-1YOoaUonVyHf1KxY3ESG57lqVnue1Z7nsukoudxFtr_-ltQ0n5kf4CItV6HQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2243277226</pqid></control><display><type>article</type><title>Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity</title><source>IEEE Electronic Library (IEL)</source><creator>Wu, Ying ; Xu, Haiwen ; Gong, Xiao ; Yeo, Yee-Chia</creator><creatorcontrib>Wu, Ying ; Xu, Haiwen ; Gong, Xiao ; Yeo, Yee-Chia</creatorcontrib><description><![CDATA[A metal-resistance-aware transmission line model (MRA-TLM) is developed to eliminate the parasitic metal resistance from the extraction of specific contact resistivity <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> in the metal/semiconductor contact. The proposed MRA-TLM is verified by Synopsys technology computer-aided design (TCAD) simulation, and a superior extraction accuracy as compared to the conventional TLM-based method is achieved. The proposed MRA-TLM is experimentally demonstrated in the metal/p + -Ge 0.95 Sn 0.05 (p + -GeSn) contacts. Ultralow <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> values of <inline-formula> <tex-math notation="LaTeX">{7.5} \times {10}^{-{10}} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{2.1} \times {10}^{-{9}} \,\, \Omega \cdot \text {cm}^{{2}} </tex-math></inline-formula> are extracted by MRA-TLM for Ni/p + -GeSn and Ti/p + -GeSn contacts, respectively, which are in good agreement with <inline-formula> <tex-math notation="LaTeX">{9.5} \times {10}^{-{10}} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{2.6} \times {10}^{-{9}} \,\,\Omega \cdot \text {cm}^{{2}} </tex-math></inline-formula> extracted numerically by the two-layer distributed-resistor-network model (TDM), qualifying the proposed MRA-TLM for the extraction of ultralow <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> down to sub-<inline-formula> <tex-math notation="LaTeX">10^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}} </tex-math></inline-formula> regime. In contrast, the <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> extracted by the conventional TLM-based method is more than three times higher due to the parasitic metal resistance.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2019.2917930</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>CAD ; Computer aided design ; Computer simulation ; Conductivity ; Distributed-resistor-network model ; Electrical resistance measurement ; Electrical resistivity ; Electrodes ; Metals ; parasitic metal resistance ; Resistance ; specific contact resistivity ; Time division multiplexing ; Titanium ; transmission line model (TLM) ; Transmission lines ; Voltage measurement</subject><ispartof>IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.3086-3092</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c357t-70dc5f109d496e6659420c4c40f15541dc3cf4d21e40d62543f6d2d544800b1a3</citedby><cites>FETCH-LOGICAL-c357t-70dc5f109d496e6659420c4c40f15541dc3cf4d21e40d62543f6d2d544800b1a3</cites><orcidid>0000-0002-9243-1937 ; 0000-0003-1016-1687 ; 0000-0002-2051-4725</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8732594$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8732594$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wu, Ying</creatorcontrib><creatorcontrib>Xu, Haiwen</creatorcontrib><creatorcontrib>Gong, Xiao</creatorcontrib><creatorcontrib>Yeo, Yee-Chia</creatorcontrib><title>Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[A metal-resistance-aware transmission line model (MRA-TLM) is developed to eliminate the parasitic metal resistance from the extraction of specific contact resistivity <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> in the metal/semiconductor contact. The proposed MRA-TLM is verified by Synopsys technology computer-aided design (TCAD) simulation, and a superior extraction accuracy as compared to the conventional TLM-based method is achieved. The proposed MRA-TLM is experimentally demonstrated in the metal/p + -Ge 0.95 Sn 0.05 (p + -GeSn) contacts. Ultralow <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> values of <inline-formula> <tex-math notation="LaTeX">{7.5} \times {10}^{-{10}} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{2.1} \times {10}^{-{9}} \,\, \Omega \cdot \text {cm}^{{2}} </tex-math></inline-formula> are extracted by MRA-TLM for Ni/p + -GeSn and Ti/p + -GeSn contacts, respectively, which are in good agreement with <inline-formula> <tex-math notation="LaTeX">{9.5} \times {10}^{-{10}} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{2.6} \times {10}^{-{9}} \,\,\Omega \cdot \text {cm}^{{2}} </tex-math></inline-formula> extracted numerically by the two-layer distributed-resistor-network model (TDM), qualifying the proposed MRA-TLM for the extraction of ultralow <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> down to sub-<inline-formula> <tex-math notation="LaTeX">10^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}} </tex-math></inline-formula> regime. In contrast, the <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> extracted by the conventional TLM-based method is more than three times higher due to the parasitic metal resistance.]]></description><subject>CAD</subject><subject>Computer aided design</subject><subject>Computer simulation</subject><subject>Conductivity</subject><subject>Distributed-resistor-network model</subject><subject>Electrical resistance measurement</subject><subject>Electrical resistivity</subject><subject>Electrodes</subject><subject>Metals</subject><subject>parasitic metal resistance</subject><subject>Resistance</subject><subject>specific contact resistivity</subject><subject>Time division multiplexing</subject><subject>Titanium</subject><subject>transmission line model (TLM)</subject><subject>Transmission lines</subject><subject>Voltage measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9UEtLAzEYDKJgrd4FLwHPW_Pa7OYotT6gRdH2HGIemLLd1CQ-evOnm9Lq6WP4Zub7ZgA4x2iEMRJX88nNiCAsRkTgRlB0AAa4rptKcMYPwQAh3FaCtvQYnKS0LJAzRgbgZ9L5le9V9qGHwcH8ZuGTiir57DWc2aw6-GyTT1n12kLfw3lUfVr5lLaKqe8tnAVjO-hChJPvHJX-81p0BXXhC76srfau-I1Dn8t-7-g_fd6cgiOnumTP9nMIFreT-fi-mj7ePYyvp5WmdZOrBhlduxLUMMEt57VgBGmmGXIlJsNGU-2YIdgyZDipGXXcEFMz1iL0ihUdgsud7zqG9w-bslyGj9iXk5IQRknTEMILC-1YOoaUonVyHf1KxY3ESG57lqVnue1Z7nsukoudxFtr_-ltQ0n5kf4CItV6HQ</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Wu, Ying</creator><creator>Xu, Haiwen</creator><creator>Gong, Xiao</creator><creator>Yeo, Yee-Chia</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9243-1937</orcidid><orcidid>https://orcid.org/0000-0003-1016-1687</orcidid><orcidid>https://orcid.org/0000-0002-2051-4725</orcidid></search><sort><creationdate>20190701</creationdate><title>Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity</title><author>Wu, Ying ; Xu, Haiwen ; Gong, Xiao ; Yeo, Yee-Chia</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c357t-70dc5f109d496e6659420c4c40f15541dc3cf4d21e40d62543f6d2d544800b1a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>CAD</topic><topic>Computer aided design</topic><topic>Computer simulation</topic><topic>Conductivity</topic><topic>Distributed-resistor-network model</topic><topic>Electrical resistance measurement</topic><topic>Electrical resistivity</topic><topic>Electrodes</topic><topic>Metals</topic><topic>parasitic metal resistance</topic><topic>Resistance</topic><topic>specific contact resistivity</topic><topic>Time division multiplexing</topic><topic>Titanium</topic><topic>transmission line model (TLM)</topic><topic>Transmission lines</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Ying</creatorcontrib><creatorcontrib>Xu, Haiwen</creatorcontrib><creatorcontrib>Gong, Xiao</creatorcontrib><creatorcontrib>Yeo, Yee-Chia</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wu, Ying</au><au>Xu, Haiwen</au><au>Gong, Xiao</au><au>Yeo, Yee-Chia</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2019-07-01</date><risdate>2019</risdate><volume>66</volume><issue>7</issue><spage>3086</spage><epage>3092</epage><pages>3086-3092</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[A metal-resistance-aware transmission line model (MRA-TLM) is developed to eliminate the parasitic metal resistance from the extraction of specific contact resistivity <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> in the metal/semiconductor contact. The proposed MRA-TLM is verified by Synopsys technology computer-aided design (TCAD) simulation, and a superior extraction accuracy as compared to the conventional TLM-based method is achieved. The proposed MRA-TLM is experimentally demonstrated in the metal/p + -Ge 0.95 Sn 0.05 (p + -GeSn) contacts. Ultralow <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> values of <inline-formula> <tex-math notation="LaTeX">{7.5} \times {10}^{-{10}} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{2.1} \times {10}^{-{9}} \,\, \Omega \cdot \text {cm}^{{2}} </tex-math></inline-formula> are extracted by MRA-TLM for Ni/p + -GeSn and Ti/p + -GeSn contacts, respectively, which are in good agreement with <inline-formula> <tex-math notation="LaTeX">{9.5} \times {10}^{-{10}} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">{2.6} \times {10}^{-{9}} \,\,\Omega \cdot \text {cm}^{{2}} </tex-math></inline-formula> extracted numerically by the two-layer distributed-resistor-network model (TDM), qualifying the proposed MRA-TLM for the extraction of ultralow <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> down to sub-<inline-formula> <tex-math notation="LaTeX">10^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}} </tex-math></inline-formula> regime. In contrast, the <inline-formula> <tex-math notation="LaTeX">\rho _{c} </tex-math></inline-formula> extracted by the conventional TLM-based method is more than three times higher due to the parasitic metal resistance.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2019.2917930</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-9243-1937</orcidid><orcidid>https://orcid.org/0000-0003-1016-1687</orcidid><orcidid>https://orcid.org/0000-0002-2051-4725</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.3086-3092 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_8732594 |
| source | IEEE Electronic Library (IEL) |
| subjects | CAD Computer aided design Computer simulation Conductivity Distributed-resistor-network model Electrical resistance measurement Electrical resistivity Electrodes Metals parasitic metal resistance Resistance specific contact resistivity Time division multiplexing Titanium transmission line model (TLM) Transmission lines Voltage measurement |
| title | Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-13T13%3A48%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Elimination%20of%20the%20Parasitic%20Metal%20Resistance%20in%20Transmission%20Line%20Model%20for%20Extraction%20of%20Ultralow%20Specific%20Contact%20Resistivity&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Wu,%20Ying&rft.date=2019-07-01&rft.volume=66&rft.issue=7&rft.spage=3086&rft.epage=3092&rft.pages=3086-3092&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2019.2917930&rft_dat=%3Cproquest_RIE%3E2243277226%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2243277226&rft_id=info:pmid/&rft_ieee_id=8732594&rfr_iscdi=true |