A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers
The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facili...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2019-07, Vol.66 (7), p.1833-1839 |
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| creator | Biro, B. David, G. Fenyvesi, A. Haggerty, J. S. Kierstead, J. Mannel, E. J. Majoros, T. Molnar, J. Nagy, F. Stoll, S. Ujvari, B. Woody, C. L. |
| description | The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10 8 to 10 12 n/cm 2 . The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures. |
| doi_str_mv | 10.1109/TNS.2019.2921102 |
| format | Article |
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S. ; Kierstead, J. ; Mannel, E. J. ; Majoros, T. ; Molnar, J. ; Nagy, F. ; Stoll, S. ; Ujvari, B. ; Woody, C. L.</creator><creatorcontrib>Biro, B. ; David, G. ; Fenyvesi, A. ; Haggerty, J. S. ; Kierstead, J. ; Mannel, E. J. ; Majoros, T. ; Molnar, J. ; Nagy, F. ; Stoll, S. ; Ujvari, B. ; Woody, C. L. ; Brookhaven National Lab. (BNL), Upton, NY (United States)</creatorcontrib><description>The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10 8 to 10 12 n/cm 2 . The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2019.2921102</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Atomic measurements ; Calorimeters ; Current measurement ; EIC ; Exposure ; Gamma rays ; Irradiation ; Leakage current ; Levels ; multipixel photon counter (MPPC) ; Neutron radiation ; Neutrons ; NUCLEAR PHYSICS AND RADIATION PHYSICS ; Nuclear research ; Particle physics ; Photomultiplier tubes ; Photon counters ; Radiation damage ; Radiation effects ; Radiation measurement ; Silicon ; silicon photomultiplier (SiPM) ; sPHENIX ; Temperature measurement ; γ Radiation</subject><ispartof>IEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1833-1839</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10 8 to 10 12 n/cm 2 . The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. This paper was carried out in order to evaluate the use of SiPMs for particle physics applications with moderate levels of radiation exposures.</description><subject>Atomic measurements</subject><subject>Calorimeters</subject><subject>Current measurement</subject><subject>EIC</subject><subject>Exposure</subject><subject>Gamma rays</subject><subject>Irradiation</subject><subject>Leakage current</subject><subject>Levels</subject><subject>multipixel photon counter (MPPC)</subject><subject>Neutron radiation</subject><subject>Neutrons</subject><subject>NUCLEAR PHYSICS AND RADIATION PHYSICS</subject><subject>Nuclear research</subject><subject>Particle physics</subject><subject>Photomultiplier tubes</subject><subject>Photon counters</subject><subject>Radiation damage</subject><subject>Radiation effects</subject><subject>Radiation measurement</subject><subject>Silicon</subject><subject>silicon photomultiplier (SiPM)</subject><subject>sPHENIX</subject><subject>Temperature measurement</subject><subject>γ Radiation</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1LAzEQxYMoWKt3wcui561Jtskmx1JqFUoVW7yGbD5oyu5mTdKD_70pK55m5s1vhscD4B7BGUKQP--3uxmGiM8wx1nAF2CCCGElIjW7BBMIESv5nPNrcBPjMY9zAskEfC2Kpe8GGVz0feFtkQ6mWFlrVIrncWtOKeSN7HWxll0ni0-pnUwua64vdq51KrcfB598d2qTG1pnQrwFV1a20dz91SnYv6z2y9dy875-Wy42paooTKVsDFHa2KbSSHMqDWEGzSXVDYdU1yxXikmFFW0UsVZpzvIWYoRrAwmppuBxfOtjciIql4w6ZD99ti8QoRBClqGnERqC_z6ZmMTRn0KfbQmMKWI1JZhnCo6UCj7GYKwYgutk-BEIinPCIicszgmLv4TzycN44owx_zirK1xRVv0Ch4B24Q</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Biro, B.</creator><creator>David, G.</creator><creator>Fenyvesi, A.</creator><creator>Haggerty, J. 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S.</au><au>Kierstead, J.</au><au>Mannel, E. J.</au><au>Majoros, T.</au><au>Molnar, J.</au><au>Nagy, F.</au><au>Stoll, S.</au><au>Ujvari, B.</au><au>Woody, C. L.</au><aucorp>Brookhaven National Lab. (BNL), Upton, NY (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2019-07-01</date><risdate>2019</risdate><volume>66</volume><issue>7</issue><spage>1833</spage><epage>1839</epage><pages>1833-1839</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of multipixel photon counters from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at the Brookhaven National Laboratory and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10 8 to 10 12 n/cm 2 . The main effect of gamma ray damage is an increase in the noise and leakage current in the irradiated devices, similar to what is seen from neutron damage, but the level of damage is considerably less at comparable high levels of exposure. In addition, the damage from gamma rays saturates after a few hundred krad, while the damage from neutrons shows no sign of saturation, suggestive of different damage mechanisms in the two cases. The change in optical absorption in the window material of the SiPMs due to radiation was also measured. 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| subjects | Atomic measurements Calorimeters Current measurement EIC Exposure Gamma rays Irradiation Leakage current Levels multipixel photon counter (MPPC) Neutron radiation Neutrons NUCLEAR PHYSICS AND RADIATION PHYSICS Nuclear research Particle physics Photomultiplier tubes Photon counters Radiation damage Radiation effects Radiation measurement Silicon silicon photomultiplier (SiPM) sPHENIX Temperature measurement γ Radiation |
| title | A Comparison of the Effects of Neutron and Gamma Radiation in Silicon Photomultipliers |
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