Electron scattering and related phenomena in SCALPEL/sup TM
Summary form only given. Various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are discussed. These phenomena can be grouped into three major categories. (i) Elastic electron scattering in the mas...
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| creator | Mkrtchyan, M.M. |
| description | Summary form only given. Various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are discussed. These phenomena can be grouped into three major categories. (i) Elastic electron scattering in the mask responsible for aerial image intensity and contrast, (ii) Inelastic electron scattering in the mask-membrane and its possible negative effects; energy spread (chromatic aberrations), membrane charging, and mask heating. (iii) Coulomb interactions of electrons in the beam (space charge) generating beam blur that links the system throughput and resolution. Analytical models, developed to describe the variety of electron interaction effects, are described briefly while their implication for the development and optimization of the electron projection lithography systems is discussed in detail. |
| doi_str_mv | 10.1109/IMNC.2000.872651 |
| format | Conference Proceeding |
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Various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are discussed. These phenomena can be grouped into three major categories. (i) Elastic electron scattering in the mask responsible for aerial image intensity and contrast, (ii) Inelastic electron scattering in the mask-membrane and its possible negative effects; energy spread (chromatic aberrations), membrane charging, and mask heating. (iii) Coulomb interactions of electrons in the beam (space charge) generating beam blur that links the system throughput and resolution. Analytical models, developed to describe the variety of electron interaction effects, are described briefly while their implication for the development and optimization of the electron projection lithography systems is discussed in detail.</description><identifier>ISBN: 4891140046</identifier><identifier>ISBN: 9784891140045</identifier><identifier>DOI: 10.1109/IMNC.2000.872651</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analytical models ; Biomembranes ; Electron beams ; Electron optics ; Energy resolution ; Image resolution ; Optical scattering ; Space charge ; Space heating ; Throughput</subject><ispartof>Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. 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Various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are discussed. These phenomena can be grouped into three major categories. (i) Elastic electron scattering in the mask responsible for aerial image intensity and contrast, (ii) Inelastic electron scattering in the mask-membrane and its possible negative effects; energy spread (chromatic aberrations), membrane charging, and mask heating. (iii) Coulomb interactions of electrons in the beam (space charge) generating beam blur that links the system throughput and resolution. Analytical models, developed to describe the variety of electron interaction effects, are described briefly while their implication for the development and optimization of the electron projection lithography systems is discussed in detail.</description><subject>Analytical models</subject><subject>Biomembranes</subject><subject>Electron beams</subject><subject>Electron optics</subject><subject>Energy resolution</subject><subject>Image resolution</subject><subject>Optical scattering</subject><subject>Space charge</subject><subject>Space heating</subject><subject>Throughput</subject><isbn>4891140046</isbn><isbn>9784891140045</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9zrsKwjAUgOGACN66i1NewPakl9jiJKWi0Ipg9xLao0batCRx8O0VdHb6h2_5CVkycBmDxDsWp9T1AcCNNz6P2IjMwjhhLAQI-YQ4xjw-CEESRcCnZJu1WFvdK2pqYS1qqW5UqIZqbIXFhg53VH2HSlCp6CXd5ecs98xzoGWxIOOraA06v87Jap-V6WEtEbEatOyEflXfjeAvvgGU6jVC</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Mkrtchyan, M.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>Electron scattering and related phenomena in SCALPEL/sup TM</title><author>Mkrtchyan, M.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_8726513</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Analytical models</topic><topic>Biomembranes</topic><topic>Electron beams</topic><topic>Electron optics</topic><topic>Energy resolution</topic><topic>Image resolution</topic><topic>Optical scattering</topic><topic>Space charge</topic><topic>Space heating</topic><topic>Throughput</topic><toplevel>online_resources</toplevel><creatorcontrib>Mkrtchyan, M.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mkrtchyan, M.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electron scattering and related phenomena in SCALPEL/sup TM</atitle><btitle>Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)</btitle><stitle>IMNC</stitle><date>2000</date><risdate>2000</risdate><spage>118</spage><pages>118-</pages><isbn>4891140046</isbn><isbn>9784891140045</isbn><abstract>Summary form only given. Various scattering phenomena involved with the energetic (100 keV) electrons carrying the mask pattern information to the wafer through the projection optics are discussed. These phenomena can be grouped into three major categories. (i) Elastic electron scattering in the mask responsible for aerial image intensity and contrast, (ii) Inelastic electron scattering in the mask-membrane and its possible negative effects; energy spread (chromatic aberrations), membrane charging, and mask heating. (iii) Coulomb interactions of electrons in the beam (space charge) generating beam blur that links the system throughput and resolution. Analytical models, developed to describe the variety of electron interaction effects, are described briefly while their implication for the development and optimization of the electron projection lithography systems is discussed in detail.</abstract><pub>IEEE</pub><doi>10.1109/IMNC.2000.872651</doi></addata></record> |
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| identifier | ISBN: 4891140046 |
| ispartof | Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387), 2000, p.118 |
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| language | eng |
| recordid | cdi_ieee_primary_872651 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Analytical models Biomembranes Electron beams Electron optics Energy resolution Image resolution Optical scattering Space charge Space heating Throughput |
| title | Electron scattering and related phenomena in SCALPEL/sup TM |
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