Molecular level simulation of the free volume effect on acid transport
Chemically amplified photoresists are highly sensitive because the product of a single photolysis can catalyze many of the deprotection reactions that change the solubility of the resist film. In deep-ultraviolet (DUV) resists, mass transport of photogenerated acid during the post exposure bake allo...
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creator | Schmid, G.M. Burns, S.D. Stewart, M.D. Singh, V.K. Willson, C.G. |
description | Chemically amplified photoresists are highly sensitive because the product of a single photolysis can catalyze many of the deprotection reactions that change the solubility of the resist film. In deep-ultraviolet (DUV) resists, mass transport of photogenerated acid during the post exposure bake allows a single acid molecule to catalyze several deprotection reactions. However, lateral transport of acid into unexposed regions of the resist can complicate control over the critical dimension of printed features. An understanding of the factors that contribute to acid mobility would allow resist manufacturers to tailor resist transport properties to their needs: however, the exact mechanism of acid transport still remains poorly understood. In this paper the efect of the lifetime of excess free volume upon resist performance has been studied with a molecular scale model. |
doi_str_mv | 10.1109/IMNC.2000.872638 |
format | Conference Proceeding |
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In deep-ultraviolet (DUV) resists, mass transport of photogenerated acid during the post exposure bake allows a single acid molecule to catalyze several deprotection reactions. However, lateral transport of acid into unexposed regions of the resist can complicate control over the critical dimension of printed features. An understanding of the factors that contribute to acid mobility would allow resist manufacturers to tailor resist transport properties to their needs: however, the exact mechanism of acid transport still remains poorly understood. 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No.00EX387)</title><addtitle>IMNC</addtitle><description>Chemically amplified photoresists are highly sensitive because the product of a single photolysis can catalyze many of the deprotection reactions that change the solubility of the resist film. In deep-ultraviolet (DUV) resists, mass transport of photogenerated acid during the post exposure bake allows a single acid molecule to catalyze several deprotection reactions. However, lateral transport of acid into unexposed regions of the resist can complicate control over the critical dimension of printed features. An understanding of the factors that contribute to acid mobility would allow resist manufacturers to tailor resist transport properties to their needs: however, the exact mechanism of acid transport still remains poorly understood. In this paper the efect of the lifetime of excess free volume upon resist performance has been studied with a molecular scale model.</description><subject>Chemical engineering</subject><subject>Chemical products</subject><subject>Lattices</subject><subject>Manufacturing</subject><subject>Mechanical factors</subject><subject>Polymer films</subject><subject>Resists</subject><subject>Volume relaxation</subject><isbn>9784891140045</isbn><isbn>4891140046</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj01LAzEURQMiKHX2xVX-wIwvk--lDFYLbd3YdUlnXjCS6ZRMWvDfG6iry-VcLhxClgwaxsC-rLe7rmkBoDG6VdzckcpqI4xlTAAI-UCqef4pHLiVEtQjWW2niP0lukQjXjHSOYyl5TCd6ORp_kbqEyK9TvEyIkXvsc-0QNeHgebkTvN5SvmJ3HsXZ6z-c0H2q7ev7qPefL6vu9dNHRiIXMsBlfBuAD549GAcHFvdY68ZM0Jb3XIPTEvgLddaMFckFEdhLUh1LHu-IM-334CIh3MKo0u_h5ss_wMDBkk7</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Schmid, G.M.</creator><creator>Burns, S.D.</creator><creator>Stewart, M.D.</creator><creator>Singh, V.K.</creator><creator>Willson, C.G.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>Molecular level simulation of the free volume effect on acid transport</title><author>Schmid, G.M. ; Burns, S.D. ; Stewart, M.D. ; Singh, V.K. ; Willson, C.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-5de64fad03dfef08a0b27cec7118479723f017503237741a72663e499056bf083</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Chemical engineering</topic><topic>Chemical products</topic><topic>Lattices</topic><topic>Manufacturing</topic><topic>Mechanical factors</topic><topic>Polymer films</topic><topic>Resists</topic><topic>Volume relaxation</topic><toplevel>online_resources</toplevel><creatorcontrib>Schmid, G.M.</creatorcontrib><creatorcontrib>Burns, S.D.</creatorcontrib><creatorcontrib>Stewart, M.D.</creatorcontrib><creatorcontrib>Singh, V.K.</creatorcontrib><creatorcontrib>Willson, C.G.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Schmid, G.M.</au><au>Burns, S.D.</au><au>Stewart, M.D.</au><au>Singh, V.K.</au><au>Willson, C.G.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Molecular level simulation of the free volume effect on acid transport</atitle><btitle>Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387)</btitle><stitle>IMNC</stitle><date>2000</date><risdate>2000</risdate><spage>92</spage><pages>92-</pages><isbn>9784891140045</isbn><isbn>4891140046</isbn><abstract>Chemically amplified photoresists are highly sensitive because the product of a single photolysis can catalyze many of the deprotection reactions that change the solubility of the resist film. In deep-ultraviolet (DUV) resists, mass transport of photogenerated acid during the post exposure bake allows a single acid molecule to catalyze several deprotection reactions. However, lateral transport of acid into unexposed regions of the resist can complicate control over the critical dimension of printed features. An understanding of the factors that contribute to acid mobility would allow resist manufacturers to tailor resist transport properties to their needs: however, the exact mechanism of acid transport still remains poorly understood. 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subjects | Chemical engineering Chemical products Lattices Manufacturing Mechanical factors Polymer films Resists Volume relaxation |
title | Molecular level simulation of the free volume effect on acid transport |
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