High-Performance Broadband Photo-Detection in Solution-Processed ZnO-ZnCr2O4 Nanowalls
We demonstrate high performance broadband UV-to-NIR detection, which is a critical issue associated with ZnO-based photodetectors. The as-synthesized ZnO-ZnCr 2 O 4 nanowalls were first time utilized for broadband, i.e., 250-850 nm photo-detection (both in front and back illumination configurations)...
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| Veröffentlicht in: | IEEE electron device letters 2019-07, Vol.40 (7), p.1143-1146 |
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| container_title | IEEE electron device letters |
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| creator | Dixit, Tejendra Agrawal, Jitesh Ganapathi, K. L. Singh, Vipul Rao, M. S. Ramachandra |
| description | We demonstrate high performance broadband UV-to-NIR detection, which is a critical issue associated with ZnO-based photodetectors. The as-synthesized ZnO-ZnCr 2 O 4 nanowalls were first time utilized for broadband, i.e., 250-850 nm photo-detection (both in front and back illumination configurations). The dark current was found to be as low as 0.12 nA. The device has shown peak sensitivity for the UV region ( \lambda _{\mathrm {ex}}= {350} nm) with the photo-sensitivity of \sim 1.28\times 10^{5} , photo-responsivity of 5.49 AW −1 , photo-detectivity of 1.91\times 10^{13} cmHz 1/2 W −1 , linear dynamic range of 82 dB, and external quantum efficiency of 1900%. In addition, the white light emission (CIE coordinates of 0.32 and 0.34) was also observed in the ZnO-ZnCr 2 O 4 nanowalls. This letter will open new directions in oxide semiconductors-based optoelectronic devices. |
| doi_str_mv | 10.1109/LED.2019.2916628 |
| format | Article |
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L. ; Singh, Vipul ; Rao, M. S. Ramachandra</creator><creatorcontrib>Dixit, Tejendra ; Agrawal, Jitesh ; Ganapathi, K. L. ; Singh, Vipul ; Rao, M. S. Ramachandra</creatorcontrib><description><![CDATA[We demonstrate high performance broadband UV-to-NIR detection, which is a critical issue associated with ZnO-based photodetectors. The as-synthesized ZnO-ZnCr 2 O 4 nanowalls were first time utilized for broadband, i.e., 250-850 nm photo-detection (both in front and back illumination configurations). The dark current was found to be as low as 0.12 nA. The device has shown peak sensitivity for the UV region (<inline-formula> <tex-math notation="LaTeX">\lambda _{\mathrm {ex}}= {350} </tex-math></inline-formula> nm) with the photo-sensitivity of <inline-formula> <tex-math notation="LaTeX">\sim 1.28\times 10^{5} </tex-math></inline-formula>, photo-responsivity of 5.49 AW −1 , photo-detectivity of <inline-formula> <tex-math notation="LaTeX">1.91\times 10^{13} </tex-math></inline-formula> cmHz 1/2 W −1 , linear dynamic range of 82 dB, and external quantum efficiency of 1900%. In addition, the white light emission (CIE coordinates of 0.32 and 0.34) was also observed in the ZnO-ZnCr 2 O 4 nanowalls. This letter will open new directions in oxide semiconductors-based optoelectronic devices.]]></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2019.2916628</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Broadband ; Broadband communication ; Dark current ; II-VI semiconductor materials ; Light emission ; Lighting ; Nanowalls ; Optoelectronic devices ; optoelectronics ; Performance evaluation ; photo-detection ; Photodetectors ; Quantum efficiency ; Sensitivity ; White light ; Zinc oxide ; ZnCr₂O</subject><ispartof>IEEE electron device letters, 2019-07, Vol.40 (7), p.1143-1146</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-7806-2151 ; 0000-0002-7182-3907 ; 0000-0002-5088-1307 ; 0000-0002-4480-7450 ; 0000-0002-8693-5733</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8714068$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,27907,27908,54741</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8714068$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Dixit, Tejendra</creatorcontrib><creatorcontrib>Agrawal, Jitesh</creatorcontrib><creatorcontrib>Ganapathi, K. L.</creatorcontrib><creatorcontrib>Singh, Vipul</creatorcontrib><creatorcontrib>Rao, M. S. Ramachandra</creatorcontrib><title>High-Performance Broadband Photo-Detection in Solution-Processed ZnO-ZnCr2O4 Nanowalls</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description><![CDATA[We demonstrate high performance broadband UV-to-NIR detection, which is a critical issue associated with ZnO-based photodetectors. The as-synthesized ZnO-ZnCr 2 O 4 nanowalls were first time utilized for broadband, i.e., 250-850 nm photo-detection (both in front and back illumination configurations). The dark current was found to be as low as 0.12 nA. The device has shown peak sensitivity for the UV region (<inline-formula> <tex-math notation="LaTeX">\lambda _{\mathrm {ex}}= {350} </tex-math></inline-formula> nm) with the photo-sensitivity of <inline-formula> <tex-math notation="LaTeX">\sim 1.28\times 10^{5} </tex-math></inline-formula>, photo-responsivity of 5.49 AW −1 , photo-detectivity of <inline-formula> <tex-math notation="LaTeX">1.91\times 10^{13} </tex-math></inline-formula> cmHz 1/2 W −1 , linear dynamic range of 82 dB, and external quantum efficiency of 1900%. In addition, the white light emission (CIE coordinates of 0.32 and 0.34) was also observed in the ZnO-ZnCr 2 O 4 nanowalls. This letter will open new directions in oxide semiconductors-based optoelectronic devices.]]></description><subject>Broadband</subject><subject>Broadband communication</subject><subject>Dark current</subject><subject>II-VI semiconductor materials</subject><subject>Light emission</subject><subject>Lighting</subject><subject>Nanowalls</subject><subject>Optoelectronic devices</subject><subject>optoelectronics</subject><subject>Performance evaluation</subject><subject>photo-detection</subject><subject>Photodetectors</subject><subject>Quantum efficiency</subject><subject>Sensitivity</subject><subject>White light</subject><subject>Zinc oxide</subject><subject>ZnCr₂O</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjU1PAjEURRujiYjuTdxM4rr42ul02qUCigkREj8WbCbt8CpDhhbbIcR_LwRX9yxOziXklsGAMdAP0_FowIHpAddMSq7OSI8VhaJQyPyc9KAUjOYM5CW5SmkNwIQoRY98TZrvFZ1jdCFujK8xe4rBLK3xy2y-Cl2gI-yw7prgs8Zn76HdHZnOY6gxJVxmCz-jCz-MfCayN-PD3rRtuiYXzrQJb_63Tz6fxx_DCZ3OXl6Hj1PacMg7ilYbqWrthEHmlEbLS2tdrmtWcobOyoNWIIjCmEIL4E4gKNTWytIopfM-uT91tzH87DB11Trsoj9cVpwLJdUhc7TuTlaDiNU2NhsTfytVMgFS5X_tKFvV</recordid><startdate>20190701</startdate><enddate>20190701</enddate><creator>Dixit, Tejendra</creator><creator>Agrawal, Jitesh</creator><creator>Ganapathi, K. 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Ramachandra</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Performance Broadband Photo-Detection in Solution-Processed ZnO-ZnCr2O4 Nanowalls</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2019-07-01</date><risdate>2019</risdate><volume>40</volume><issue>7</issue><spage>1143</spage><epage>1146</epage><pages>1143-1146</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract><![CDATA[We demonstrate high performance broadband UV-to-NIR detection, which is a critical issue associated with ZnO-based photodetectors. The as-synthesized ZnO-ZnCr 2 O 4 nanowalls were first time utilized for broadband, i.e., 250-850 nm photo-detection (both in front and back illumination configurations). The dark current was found to be as low as 0.12 nA. 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| subjects | Broadband Broadband communication Dark current II-VI semiconductor materials Light emission Lighting Nanowalls Optoelectronic devices optoelectronics Performance evaluation photo-detection Photodetectors Quantum efficiency Sensitivity White light Zinc oxide ZnCr₂O |
| title | High-Performance Broadband Photo-Detection in Solution-Processed ZnO-ZnCr2O4 Nanowalls |
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