Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory

Hafnium oxide-based resistive random access memory (RRAM) ( {\mathrm {TiN/HfO}}_{2-{x}} /Pt/Au) stacks were irradiated with 1.1-GeV Au ions with fluences between 10 10 and 10 12 ions/cm 2 and evaluated regarding pristine resistance, forming voltage, and data retention. Only for the highest fluence,...

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Veröffentlicht in:	IEEE transactions on nuclear science 2019-07, Vol.66 (7), p.1715-1718
Hauptverfasser:	Petzold, Stefan, Sharath, S. U., Lemke, Jonas, Hildebrandt, Erwin, Trautmann, Christina, Alff, Lambert
Format:	Artikel
Sprache:	eng
Schlagworte:	Data retention Electric potential Electroforming Fluence Gold Hafnium Hafnium oxide Heavy ion radiation Heavy ions HfO Ionizing radiation Ions irradiation MIM devices nonvolatile memory (NVM) Platinum Radiation effects radiation effects basic mechanisms Random access memory Resistance resistive random access memory (RRAM) resistive switching Retention space radiation effects Switches total dose effects Voltage
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